JPS5665981A - Sputtering device - Google Patents

Sputtering device

Info

Publication number
JPS5665981A
JPS5665981A JP14134579A JP14134579A JPS5665981A JP S5665981 A JPS5665981 A JP S5665981A JP 14134579 A JP14134579 A JP 14134579A JP 14134579 A JP14134579 A JP 14134579A JP S5665981 A JPS5665981 A JP S5665981A
Authority
JP
Japan
Prior art keywords
gate valve
space
electrode plate
target
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14134579A
Other languages
Japanese (ja)
Inventor
Takaaki Kumochi
Mitsuo Ichikawa
Saburo Nobutoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14134579A priority Critical patent/JPS5665981A/en
Publication of JPS5665981A publication Critical patent/JPS5665981A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To obtain a stable sputter film easily, by providing a gate valve which cuts off the space in the target electrode plate side and the space in the electrode plate side mounting member to be sputtered from each other in the airtight state. CONSTITUTION:In the sputtering device which has target electrode plate 9 and electrode plate 4 mounting member to be sputtered in the airtight space part and applies a high-frequency voltage and a DC voltage across electrodes, gate valve 18 is provided between the aperture part of bell jar 1 and target 9. This gate valve 18 cuts off the space in the target 9 side and the space in the electrode plate 4 side from each other in the airtight condition. For exchange of substrate 5 to be stuck, gate valve 18 is closed, and bell jar 2 is opened. Consequently, target 9 in the space constituted by bell jar 1 and gate valve 18 is held in the same atmosphere as that for sputtering and is not polluted by adsorbe gas and so on. After exchange of substrate 5 to be stuck, bell jar 2 is made vacuum to generate the sputtering atmosphere, and gate valve 18 is opened, and sputtering is performed again.
JP14134579A 1979-11-02 1979-11-02 Sputtering device Pending JPS5665981A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14134579A JPS5665981A (en) 1979-11-02 1979-11-02 Sputtering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14134579A JPS5665981A (en) 1979-11-02 1979-11-02 Sputtering device

Publications (1)

Publication Number Publication Date
JPS5665981A true JPS5665981A (en) 1981-06-04

Family

ID=15289793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14134579A Pending JPS5665981A (en) 1979-11-02 1979-11-02 Sputtering device

Country Status (1)

Country Link
JP (1) JPS5665981A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5756766U (en) * 1980-09-19 1982-04-02
JPS59143069A (en) * 1983-02-04 1984-08-16 Fujitsu Ltd Sputtering device
JPS61235558A (en) * 1985-04-12 1986-10-20 Nippon Telegr & Teleph Corp <Ntt> Sputtering device
JPH0290665U (en) * 1988-12-28 1990-07-18
WO1998002596A1 (en) * 1996-07-12 1998-01-22 Bayerische Motoren Werke Aktiengesellschaft Vacuum coating system with a coating chamber and at least one source chamber
WO2001027970A1 (en) * 1999-10-13 2001-04-19 Unaxis Deutschland Gmbh Electric supply unit and a method for reducing sparking during sputtering

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5015471A (en) * 1973-06-08 1975-02-18
JPS541046B1 (en) * 1967-02-06 1979-01-19

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS541046B1 (en) * 1967-02-06 1979-01-19
JPS5015471A (en) * 1973-06-08 1975-02-18

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5756766U (en) * 1980-09-19 1982-04-02
JPS5812839Y2 (en) * 1980-09-19 1983-03-11 近藤耐酸槽株式会社 surface treatment equipment
JPS59143069A (en) * 1983-02-04 1984-08-16 Fujitsu Ltd Sputtering device
JPS61235558A (en) * 1985-04-12 1986-10-20 Nippon Telegr & Teleph Corp <Ntt> Sputtering device
JPH021229B2 (en) * 1985-04-12 1990-01-10 Nippon Telegraph & Telephone
JPH0290665U (en) * 1988-12-28 1990-07-18
WO1998002596A1 (en) * 1996-07-12 1998-01-22 Bayerische Motoren Werke Aktiengesellschaft Vacuum coating system with a coating chamber and at least one source chamber
WO2001027970A1 (en) * 1999-10-13 2001-04-19 Unaxis Deutschland Gmbh Electric supply unit and a method for reducing sparking during sputtering
US6740207B2 (en) 1999-10-13 2004-05-25 Unaxis Deutschland Gmbh Electric supply unit and method for reducing arcing during sputtering

Similar Documents

Publication Publication Date Title
KR880009454A (en) Sputter deposition method and apparatus therefor
WO1987007651A1 (en) Semiconductor manufacturing apparatus
GB1371462A (en) Apparatus for coating workpieces
JPS5665981A (en) Sputtering device
DE3772706D1 (en) SYSTEM FOR VACUUM SUPPORT BY REACTIVE CATHODE SPRAYING ON A GLASS PLATE.
GB1358411A (en) Sputtering
GB1301653A (en)
US3399129A (en) Sputer deposition of nickel-iron-manganese ferromagnetic films
JPS5420975A (en) Sputtering device
ES393087A1 (en) Apparatus and method for cathode sputtering on the two sides of a metallic support having large dimensions
JPS5917193B2 (en) sputtering equipment
JP3628395B2 (en) Sputter cathode
GB1299945A (en) Sputtering apparatus
JPS5435178A (en) Ultrafine particle depositing apparatus
JPS55150523A (en) Gas discharge display panel
GB873024A (en) Glow discharge apparatus
JPS5568723A (en) Elastic surface wave device
JPS54149338A (en) Thin film forming method by sputtering
JPS5429572A (en) Plasma unit
JPS57137469A (en) Sputtering device
JPS5615838A (en) Gaseous phase growth device
JPS5591975A (en) Thin film forming method
GB1234312A (en)
JPS52122284A (en) Sputtering device having bias electrode
KR940008015B1 (en) Sputtering apparatus