GB1234312A - - Google Patents

Info

Publication number
GB1234312A
GB1234312A GB1234312DA GB1234312A GB 1234312 A GB1234312 A GB 1234312A GB 1234312D A GB1234312D A GB 1234312DA GB 1234312 A GB1234312 A GB 1234312A
Authority
GB
United Kingdom
Prior art keywords
vapour
substrate
ionized
electron beam
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1234312A publication Critical patent/GB1234312A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02Epitaxial-layer growth
    • C30B23/08Epitaxial-layer growth by condensing ionised vapours

Abstract

1,234,312. Vapour deposition. EUROPEAN ATOMIC ENERGY COMMUNITY. May 23, 1969 [June 28, 1968], No.26495/69. Heading C7F. In a vapour deposition coating method, the vapour of the coating material is ionized and concentrated around the substrate and an electric potential capable of attracting the ionized vapour is applied to the substrate. Substantially closed vessel 4 is located in a vacuum enclosure at a pressure < 10<SP>-4</SP> Torr and contains a rotatable, earthed, source 1 of material to be evaporated, e.g. Ni, Al 2 O 3 , Cd or Mo, which is heated by an electron beam passing through orifice 6. Substrate 9 is held on movable rod 8 and a p.d. is applied thereto by D.C. cell 11 coacting with resistor 12. A screen 15 may be placed between the substrate and the electron beam, putting the substrate in a Faraday cage. The electron beam causes evaporation of material 1 and ionization of the vapour, vessel 4 concentrates the vapour, and the potential from cell 11 attracts the ionized vapour to substrate 9.
GB1234312D 1968-06-28 1969-05-23 Expired GB1234312A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
BE717304 1968-06-28

Publications (1)

Publication Number Publication Date
GB1234312A true GB1234312A (en) 1971-06-03

Family

ID=3853165

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1234312D Expired GB1234312A (en) 1968-06-28 1969-05-23

Country Status (4)

Country Link
BE (1) BE717304A (en)
CH (1) CH519933A (en)
GB (1) GB1234312A (en)
NL (1) NL6907944A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2366693A1 (en) * 1976-09-29 1978-04-28 Siemens Ag PROCESS FOR FORMING A LAYER WITH A STRUCTURE ON A SUBSTRATE
GB2174108A (en) * 1985-04-04 1986-10-29 Sharp Kk Method for forming a polycrystalline silicon thin film
GB2189509A (en) * 1986-03-27 1987-10-28 Mitsubishi Electric Corp Process for coating a workpiece with a ceramic material

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2366693A1 (en) * 1976-09-29 1978-04-28 Siemens Ag PROCESS FOR FORMING A LAYER WITH A STRUCTURE ON A SUBSTRATE
GB2174108A (en) * 1985-04-04 1986-10-29 Sharp Kk Method for forming a polycrystalline silicon thin film
GB2174108B (en) * 1985-04-04 1989-07-19 Sharp Kk Method for forming a polycrystalline silicon thin film
GB2189509A (en) * 1986-03-27 1987-10-28 Mitsubishi Electric Corp Process for coating a workpiece with a ceramic material
US4816293A (en) * 1986-03-27 1989-03-28 Mitsubishi Denki Kabushiki Kaisha Process for coating a workpiece with a ceramic material
GB2189509B (en) * 1986-03-27 1990-10-17 Mitsubishi Electric Corp Process for coating a workpiece with a ceramic material

Also Published As

Publication number Publication date
CH519933A (en) 1972-03-15
BE717304A (en) 1968-12-30
NL6907944A (en) 1969-12-30

Similar Documents

Publication Publication Date Title
MY104370A (en) Method for pure ion plating using magnetic fields.
GB1483966A (en) Vapourized-metal cluster ion source and ionized-cluster beam deposition
DE69602131T2 (en) System for electron beam deposition from the gas phase
GB1233404A (en)
GB1532759A (en) Production of monocrystalline layers on substrates
GB1280012A (en) Improvements in or relating to ion beam sources
GB1234312A (en)
GB1092744A (en) Improvements in or relating to methods for vapour deposition of films and films so made
GB887517A (en) Improvements relating to electron microscopes
GB939275A (en) Device for producing thin metal layers by ion neutralization
GB935197A (en) Glow discharge pump apparatus
US5130607A (en) Cold-cathode, ion-generating and ion-accelerating universal device
GB1270496A (en) Ion source for slow-ion sputtering
GB792043A (en) Improvements relating to mass spectrometers
GB1064101A (en) Improvements in or relating to ion sources
GB1308971A (en) Electron beam deflection apparatus
JPS57155369A (en) High vacuum ion plating method and apparatus
GB862892A (en) A high-vacuum ion-getter pump
JPS55141562A (en) Metallizing method
JPS57157511A (en) Opposite target type sputtering device
JPS57171666A (en) Thin film vapor-deposition device
JPS5635763A (en) Film thickness controlling system
JPS5668932A (en) Manufacture of magnetic recording medium
JPS5690432A (en) Production of magnetic recording medium
JPS5614498A (en) Manufacture of transparent electrically conductive thin film

Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees