GB1321005A - Method for increasing the electron emissivity of a semiconductor electron emitter - Google Patents
Method for increasing the electron emissivity of a semiconductor electron emitterInfo
- Publication number
- GB1321005A GB1321005A GB1611771*[A GB1611771A GB1321005A GB 1321005 A GB1321005 A GB 1321005A GB 1611771 A GB1611771 A GB 1611771A GB 1321005 A GB1321005 A GB 1321005A
- Authority
- GB
- United Kingdom
- Prior art keywords
- heated
- semiconductor
- crystal
- cooled
- electropositive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
- 239000013078 crystal Substances 0.000 abstract 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 108010083687 Ion Pumps Proteins 0.000 abstract 1
- 239000003513 alkali Substances 0.000 abstract 1
- 150000001342 alkaline earth metals Chemical class 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 239000010406 cathode material Substances 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 229910052711 selenium Inorganic materials 0.000 abstract 1
- 230000001235 sensitizing effect Effects 0.000 abstract 1
- 229910052717 sulfur Inorganic materials 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/22—Applying luminescent coatings
- H01J9/221—Applying luminescent coatings in continuous layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/22—Applying luminescent coatings
- H01J9/227—Applying luminescent coatings with luminescent material discontinuously arranged, e.g. in dots or lines
Abstract
1321005 Cathode materials and processing RCA CORPORATION 20 May 1971 [20 May 1971] 16117/71 Heading H1D A method of increasing the electron emissivity of a semi-conductor emitter comprises sensitizing the surface of the semiconductor with strongly electropositive and electronegative materials, heating to 470-590 C., cooling and resensitizing with a strongly electropositive material. A GaAs crystal 12 on which a layer 10 of In 0À15 Ga 0À85 As is epitaxially grown is mounted in a vacuum chamber 14 continuously evacuated by an ion pump 16. The crystal is heated to 630 C. to clean the surface, cooled and sensitized by introducing Cs vapour then Cs and O. As Cs is added the photoemissivity increases, O 2 is added when the photoemissivity passes a peak and is stopped when a new peak is reached. This is repeated until no further increase is detected. The crystal is heated to 535 C., cooled and resensitized. The Cs is provided by heating Cs 21 previously cooled by liquid N 2 22 whilst O 2 diffuses through the walls of a pure Ag tube 24 when heated. Electropositive elements include alkali and alkaline earth metals, e.g. Ba. Electronegative elements include O, S, Se, Te and halogens, e.g. F. The semiconductor may be Si cleaned by argon bombardment, then annealed.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6953770A | 1970-09-04 | 1970-09-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1321005A true GB1321005A (en) | 1973-06-20 |
Family
ID=22089655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1611771*[A Expired GB1321005A (en) | 1970-09-04 | 1971-05-20 | Method for increasing the electron emissivity of a semiconductor electron emitter |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3669735A (en) |
| JP (1) | JPS5120153B1 (en) |
| DE (1) | DE2127658A1 (en) |
| FR (1) | FR2105234B1 (en) |
| GB (1) | GB1321005A (en) |
| NL (1) | NL7106981A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL160425C (en) * | 1971-08-17 | 1979-10-15 | Philips Nv | METHOD OF MANUFACTURING AN ELECTRICAL DISCHARGE TUBE, INCLUDING AN ELECTRON-EMITTING ELECTRODE, CONSISTING OF A SUPPORT, ONTO WHICH A CAESIUM-CONTAINING LAYER HAS BEEN APPLIED, AND ELECTRICAL DISCHARGE TUBE. |
| US3894258A (en) * | 1973-06-13 | 1975-07-08 | Rca Corp | Proximity image tube with bellows focussing structure |
| US4019082A (en) * | 1975-03-24 | 1977-04-19 | Rca Corporation | Electron emitting device and method of making the same |
| GB1555762A (en) * | 1975-08-14 | 1979-11-14 | Mullard Ltd | Method of cleaning surfaces |
| JPS58114027U (en) * | 1982-01-28 | 1983-08-04 | 松下電工株式会社 | Stabilizer mounting structure |
| JPS5998636U (en) * | 1982-12-21 | 1984-07-04 | 明治ナシヨナル工業株式会社 | Ballast device for discharge lamps |
| CN110706989A (en) * | 2019-10-30 | 2020-01-17 | 南京工程学院 | Cs/NF3 activation method for improving stability of GaAs photocathode |
-
1970
- 1970-09-04 US US69537A patent/US3669735A/en not_active Expired - Lifetime
-
1971
- 1971-05-20 GB GB1611771*[A patent/GB1321005A/en not_active Expired
- 1971-05-21 NL NL7106981A patent/NL7106981A/xx not_active Application Discontinuation
- 1971-05-28 FR FR7119454A patent/FR2105234B1/fr not_active Expired
- 1971-06-03 DE DE19712127658 patent/DE2127658A1/en not_active Withdrawn
- 1971-06-03 JP JP46038971A patent/JPS5120153B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2105234B1 (en) | 1977-11-18 |
| US3669735A (en) | 1972-06-13 |
| FR2105234A1 (en) | 1972-04-28 |
| DE2127658B2 (en) | 1979-03-29 |
| JPS5120153B1 (en) | 1976-06-23 |
| DE2127658A1 (en) | 1972-03-09 |
| NL7106981A (en) | 1972-03-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |