GB1418002A - Photocathode manufacture - Google Patents

Photocathode manufacture

Info

Publication number
GB1418002A
GB1418002A GB5438772A GB5438772A GB1418002A GB 1418002 A GB1418002 A GB 1418002A GB 5438772 A GB5438772 A GB 5438772A GB 5438772 A GB5438772 A GB 5438772A GB 1418002 A GB1418002 A GB 1418002A
Authority
GB
United Kingdom
Prior art keywords
layer
photocathode
layers
single crystal
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5438772A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Components Ltd
Original Assignee
Mullard Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mullard Ltd filed Critical Mullard Ltd
Priority to GB5438772A priority Critical patent/GB1418002A/en
Priority to DE2356206A priority patent/DE2356206A1/en
Priority to CA185,664A priority patent/CA995800A/en
Priority to JP48130323A priority patent/JPS4997565A/ja
Priority to FR7341621A priority patent/FR2208186B1/fr
Priority to US418295A priority patent/US3889143A/en
Priority to US05/534,205 priority patent/US3981755A/en
Publication of GB1418002A publication Critical patent/GB1418002A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)

Abstract

1418002 Cathode materials MULLARD Ltd 21 Aug 1973 [24 Nov 1972] 54387/72 Heading H1D A photocathode 3 comprises an epitaxial layer 4 of photocathode material on a single crystal layer 5 of GaInP having relative proportions of Ga and In such that the layers have the same lattice parameter; the thickness of the first layer being of the order of the diffusion length of electrons therein. The layer 4 is of GaAs doped with Zn and is activated with Cs and O. Layers 5, 4 are grown successively on a thick single crystal plate of GaAs by liquid or vapour phase epitaxy and the centre of the plate etched to leave a circular frame 6. The material of members 4, 6 may be GaInAs or InAsP. The photocathode is used in an image intensifier including an infra-red transmissive window 2 and a luminescent layer 7 on a conductive support.
GB5438772A 1972-11-24 1972-11-24 Photocathode manufacture Expired GB1418002A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GB5438772A GB1418002A (en) 1972-11-24 1972-11-24 Photocathode manufacture
DE2356206A DE2356206A1 (en) 1972-11-24 1973-11-10 METHOD OF MANUFACTURING A PHOTOCATHOD
CA185,664A CA995800A (en) 1972-11-24 1973-11-13 Photocathode manufacture
JP48130323A JPS4997565A (en) 1972-11-24 1973-11-21
FR7341621A FR2208186B1 (en) 1972-11-24 1973-11-22
US418295A US3889143A (en) 1972-11-24 1973-11-23 Photocathode manufacture
US05/534,205 US3981755A (en) 1972-11-24 1974-12-19 Photocathode manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5438772A GB1418002A (en) 1972-11-24 1972-11-24 Photocathode manufacture

Publications (1)

Publication Number Publication Date
GB1418002A true GB1418002A (en) 1975-12-17

Family

ID=10470843

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5438772A Expired GB1418002A (en) 1972-11-24 1972-11-24 Photocathode manufacture

Country Status (6)

Country Link
US (1) US3889143A (en)
JP (1) JPS4997565A (en)
CA (1) CA995800A (en)
DE (1) DE2356206A1 (en)
FR (1) FR2208186B1 (en)
GB (1) GB1418002A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4019082A (en) * 1975-03-24 1977-04-19 Rca Corporation Electron emitting device and method of making the same
US3995303A (en) * 1975-06-05 1976-11-30 Bell Telephone Laboratories, Incorporated Growth and operation of a step-graded ternary III-V heterojunction p-n diode photodetector
DE2832141A1 (en) * 1978-07-21 1980-01-31 Siemens Ag X=ray converter screen - of improved performance by heating after polishing for reduced surface roughness of photocathode substrate
US4233934A (en) * 1978-12-07 1980-11-18 General Electric Company Guard ring for TGZM processing
US4498225A (en) * 1981-05-06 1985-02-12 The United States Of America As Represented By The Secretary Of The Army Method of forming variable sensitivity transmission mode negative electron affinity photocathode
US5311044A (en) * 1992-06-02 1994-05-10 Advanced Photonix, Inc. Avalanche photomultiplier tube
US5418424A (en) * 1993-07-09 1995-05-23 Univ Columbia Vacuum ultraviolet light source utilizing rare gas scintillation amplification sustained by photon positive feedback
CN106783467B (en) * 2016-12-27 2018-06-05 北京汉元一诺科技有限公司 A kind of method that three-generation image enhancer is made using gallium arsenide wafer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3478213A (en) * 1967-09-05 1969-11-11 Rca Corp Photomultiplier or image amplifier with secondary emission transmission type dynodes made of semiconductive material with low work function material disposed thereon
US3575628A (en) * 1968-11-26 1971-04-20 Westinghouse Electric Corp Transmissive photocathode and devices utilizing the same
US3696262A (en) * 1970-01-19 1972-10-03 Varian Associates Multilayered iii-v photocathode having a transition layer and a high quality active layer
NL7019039A (en) * 1970-01-19 1971-07-21
US3699401A (en) * 1971-05-17 1972-10-17 Rca Corp Photoemissive electron tube comprising a thin film transmissive semiconductor photocathode structure

Also Published As

Publication number Publication date
DE2356206A1 (en) 1974-05-30
FR2208186A1 (en) 1974-06-21
JPS4997565A (en) 1974-09-14
FR2208186B1 (en) 1977-03-11
US3889143A (en) 1975-06-10
CA995800A (en) 1976-08-24

Similar Documents

Publication Publication Date Title
GB1452917A (en) Transmission photocathode device and method of making the same
US4616248A (en) UV photocathode using negative electron affinity effect in Alx Ga1 N
Pankove Tunneling-assisted photon emission in gallium arsenide pn junctions
GB1075247A (en) Solid state radiation emitters
GB1299549A (en) Aiii-bv cathodes having a built-in gradient of potential energy for increasing the emission efficiency
GB1378327A (en) Iii-v compound on insulating substrate
GB1426956A (en) Electroluminescent device
GB1418002A (en) Photocathode manufacture
US3672992A (en) Method of forming group iii-v compound photoemitters having a high quantum efficiency and long wavelength response
GB1308634A (en) Energy converter
GB1086228A (en) Improvements in or relating to electric discharge devices comprising a photocathode
KR860006843A (en) Field Effect Semiconductor Device
GB1258917A (en)
US4096511A (en) Photocathodes
Garbe CsF, Cs as a low work function layer on the GaAs photocathode
GB1487808A (en) Solar cells
US3972770A (en) Method of preparation of electron emissive materials
GB1200899A (en) Improvements in or relating to photocathodes
US3932883A (en) Photocathodes
GB1321005A (en) Method for increasing the electron emissivity of a semiconductor electron emitter
US3900865A (en) Group III-V compound photoemitters having a high quantum efficiency and long wavelength response
GB1508799A (en) Light emissive semiconductor device
GB1194017A (en) Improvements in and relating to Methods of Manufacturing Semiconductor Devices
GB1335979A (en) Cold cathode structure
GB1239893A (en) Improvements in or relating to photocathodes

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee