JPS4997565A - - Google Patents

Info

Publication number
JPS4997565A
JPS4997565A JP48130323A JP13032373A JPS4997565A JP S4997565 A JPS4997565 A JP S4997565A JP 48130323 A JP48130323 A JP 48130323A JP 13032373 A JP13032373 A JP 13032373A JP S4997565 A JPS4997565 A JP S4997565A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48130323A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4997565A publication Critical patent/JPS4997565A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/12Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/34Photo-emissive cathodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00Electrodes common to discharge tubes
    • H01J2201/34Photoemissive electrodes
    • H01J2201/342Cathodes
    • H01J2201/3421Composition of the emitting surface
    • H01J2201/3423Semiconductors, e.g. GaAs, NEA emitters
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/049Equivalence and options
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/051Etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/072Heterojunctions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/135Removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
JP48130323A 1972-11-24 1973-11-21 Pending JPS4997565A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5438772A GB1418002A (en) 1972-11-24 1972-11-24 Photocathode manufacture

Publications (1)

Publication Number Publication Date
JPS4997565A true JPS4997565A (en) 1974-09-14

Family

ID=10470843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48130323A Pending JPS4997565A (en) 1972-11-24 1973-11-21

Country Status (6)

Country Link
US (1) US3889143A (en)
JP (1) JPS4997565A (en)
CA (1) CA995800A (en)
DE (1) DE2356206A1 (en)
FR (1) FR2208186B1 (en)
GB (1) GB1418002A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4019082A (en) * 1975-03-24 1977-04-19 Rca Corporation Electron emitting device and method of making the same
US3995303A (en) * 1975-06-05 1976-11-30 Bell Telephone Laboratories, Incorporated Growth and operation of a step-graded ternary III-V heterojunction p-n diode photodetector
DE2832141A1 (en) * 1978-07-21 1980-01-31 Siemens Ag X=ray converter screen - of improved performance by heating after polishing for reduced surface roughness of photocathode substrate
US4233934A (en) * 1978-12-07 1980-11-18 General Electric Company Guard ring for TGZM processing
US4498225A (en) * 1981-05-06 1985-02-12 The United States Of America As Represented By The Secretary Of The Army Method of forming variable sensitivity transmission mode negative electron affinity photocathode
US5311044A (en) * 1992-06-02 1994-05-10 Advanced Photonix, Inc. Avalanche photomultiplier tube
US5418424A (en) * 1993-07-09 1995-05-23 Univ Columbia Vacuum ultraviolet light source utilizing rare gas scintillation amplification sustained by photon positive feedback
CN106783467B (en) * 2016-12-27 2018-06-05 北京汉元一诺科技有限公司 A kind of method that three-generation image enhancer is made using gallium arsenide wafer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3478213A (en) * 1967-09-05 1969-11-11 Rca Corp Photomultiplier or image amplifier with secondary emission transmission type dynodes made of semiconductive material with low work function material disposed thereon
US3575628A (en) * 1968-11-26 1971-04-20 Westinghouse Electric Corp Transmissive photocathode and devices utilizing the same
NL7019039A (en) * 1970-01-19 1971-07-21
US3696262A (en) * 1970-01-19 1972-10-03 Varian Associates Multilayered iii-v photocathode having a transition layer and a high quality active layer
US3699401A (en) * 1971-05-17 1972-10-17 Rca Corp Photoemissive electron tube comprising a thin film transmissive semiconductor photocathode structure

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS#V12#N13=1968 *
JOURNAL OF APPLIED PHYSICS#V5#N41=1970 *
JOURNAL OF APPLIED PHYSICS#V9#N42=1971 *

Also Published As

Publication number Publication date
CA995800A (en) 1976-08-24
DE2356206A1 (en) 1974-05-30
FR2208186B1 (en) 1977-03-11
GB1418002A (en) 1975-12-17
US3889143A (en) 1975-06-10
FR2208186A1 (en) 1974-06-21

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