GB1299549A - Aiii-bv cathodes having a built-in gradient of potential energy for increasing the emission efficiency - Google Patents

Aiii-bv cathodes having a built-in gradient of potential energy for increasing the emission efficiency

Info

Publication number
GB1299549A
GB1299549A GB2261/71A GB226171A GB1299549A GB 1299549 A GB1299549 A GB 1299549A GB 2261/71 A GB2261/71 A GB 2261/71A GB 226171 A GB226171 A GB 226171A GB 1299549 A GB1299549 A GB 1299549A
Authority
GB
United Kingdom
Prior art keywords
cathode
layer
photo
gradient
constituent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2261/71A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of GB1299549A publication Critical patent/GB1299549A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/042—Doping, graded, for tapered etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/936—Graded energy gap

Landscapes

  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)

Abstract

1299549 Cathode materials VARIAN ASSOCIATES 18 Jan 1971 [19 Jan 1970] 2261/71 Heading H1D A photo-cathode comprises an A III B V crystalline layer 34 containing a third constituent whose concentration changes through the layer to establish a potential energy gradient, e.g. 1000 volts/cm. which promotes free electron drift towards an emissive surface, the constituent may be Al, Ga, In, P, As, Sb or Zn. The cathode comprises a conductor 36, a P-type semi-conductor substrate 32 heavily doped with Zn or Be, the graded layer 34 an alkali metal layer 38 and an N-type Cs 2 O and/or Ce layer 40 to lower the work function. The constituent may be introduced as an increasing fraction during growth of the layer 34 by liquid or vapour epitaxy or vapour deposition. GaAs 0À85 Sb 0À15 is grown on GaAs substrates by liquid epitaxy. The gradient of Zn is effected by reducing the flow of organo-zinc vapour to the growth area or by lowering the temperature of the Zn or Zn alloy source during growth. The photo-cathode 14 is used in an infra-red image intensifier tube comprising an envelope 20, focusing lens 16, mirror 18, fluorescent screen 24 and accelerating electrodes 22 which focus the electron image emitted by the photo-cathode on to the screen. If the cathode is sufficiently thin the electron image may emerge on the side opposite that receiving incident radiation.
GB2261/71A 1970-01-19 1971-01-18 Aiii-bv cathodes having a built-in gradient of potential energy for increasing the emission efficiency Expired GB1299549A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US394870A 1970-01-19 1970-01-19

Publications (1)

Publication Number Publication Date
GB1299549A true GB1299549A (en) 1972-12-13

Family

ID=21708362

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2261/71A Expired GB1299549A (en) 1970-01-19 1971-01-18 Aiii-bv cathodes having a built-in gradient of potential energy for increasing the emission efficiency

Country Status (3)

Country Link
US (1) US3631303A (en)
JP (1) JPS5335434B1 (en)
GB (1) GB1299549A (en)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1478453A (en) * 1971-11-29 1977-06-29 Secr Defence Photocathodes
US3981755A (en) * 1972-11-24 1976-09-21 U.S. Philips Corporation Photocathode manufacture
US3958143A (en) * 1973-01-15 1976-05-18 Varian Associates Long-wavelength photoemission cathode
GB1439822A (en) * 1973-02-06 1976-06-16 Standard Telephones Cables Ltd Gallium arsenide photocathodes
SU519042A1 (en) * 1974-05-21 1978-07-25 Предприятие П/Я М-5273 Photoelectronic emitter
US3986065A (en) * 1974-10-24 1976-10-12 Rca Corporation Insulating nitride compounds as electron emitters
GB1528192A (en) * 1975-03-10 1978-10-11 Secr Defence Surface treatment of iii-v compound crystals
US4066483A (en) * 1976-07-07 1978-01-03 Western Electric Company, Inc. Gate-controlled bidirectional switching device
JPS5441134U (en) * 1977-08-26 1979-03-19
JPS54172622U (en) * 1977-08-26 1979-12-06
DE2909956A1 (en) * 1979-03-14 1980-09-18 Licentia Gmbh SEMICONDUCTOR GLASS COMPOSITE
FR2507386A1 (en) * 1981-06-03 1982-12-10 Labo Electronique Physique SEMICONDUCTOR DEVICE, ELECTRON TRANSMITTER, WITH ACTIVE LAYER HAVING A DOPING GRADIENT
NL8500413A (en) * 1985-02-14 1986-09-01 Philips Nv ELECTRON BUNDLE DEVICE WITH A SEMICONDUCTOR ELECTRON EMITTER.
FR2592217B1 (en) * 1985-12-20 1988-02-05 Thomson Csf INTERNAL AMPLIFICATION PHOTOCATHODE
US5315126A (en) * 1992-10-13 1994-05-24 Itt Corporation Highly doped surface layer for negative electron affinity devices
US5404026A (en) * 1993-01-14 1995-04-04 Regents Of The University Of California Infrared-sensitive photocathode
US5576559A (en) * 1994-11-01 1996-11-19 Intevac, Inc. Heterojunction electron transfer device
US5908699A (en) * 1996-10-11 1999-06-01 Skion Corporation Cold cathode electron emitter and display structure
US5712490A (en) * 1996-11-21 1998-01-27 Itt Industries, Inc. Ramp cathode structures for vacuum emission
JPH1196896A (en) * 1997-09-24 1999-04-09 Hamamatsu Photonics Kk Semiconductor photoelectric surface
US7161162B2 (en) * 2002-10-10 2007-01-09 Applied Materials, Inc. Electron beam pattern generator with photocathode comprising low work function cesium halide
US7015467B2 (en) * 2002-10-10 2006-03-21 Applied Materials, Inc. Generating electrons with an activated photocathode
US7446474B2 (en) * 2002-10-10 2008-11-04 Applied Materials, Inc. Hetero-junction electron emitter with Group III nitride and activated alkali halide
US7005637B2 (en) * 2003-01-31 2006-02-28 Intevac, Inc. Backside thinning of image array devices
US7042060B2 (en) * 2003-01-31 2006-05-09 Intevac, Inc. Backside thinning of image array devices
US7531826B2 (en) * 2005-06-01 2009-05-12 Intevac, Inc. Photocathode structure and operation
JP5342769B2 (en) * 2006-12-28 2013-11-13 浜松ホトニクス株式会社 Photocathode, electron tube and photomultiplier tube
US8362678B2 (en) * 2008-11-27 2013-01-29 Samsung Display Co., Ltd. Lamp structure and liquid crystal display apparatus having the same
CN111627821B (en) * 2020-06-05 2023-09-12 温州大学 Electron-hole reversible doping method for multi-layer molybdenum ditelluride field effect transistor
JP2022078567A (en) 2020-11-13 2022-05-25 日本製鉄株式会社 Surface-treated metal sheet

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3059123A (en) * 1954-10-28 1962-10-16 Bell Telephone Labor Inc Internal field transistor
US3132057A (en) * 1959-01-29 1964-05-05 Raytheon Co Graded energy gap semiconductive device
US3304445A (en) * 1961-02-13 1967-02-14 Martin Marietta Corp Semiconductor battery
NL147572B (en) * 1964-12-02 1975-10-15 Philips Nv ELECTRIC DISCHARGE TUBE WITH A PHOTO CATHOD.
US3478213A (en) * 1967-09-05 1969-11-11 Rca Corp Photomultiplier or image amplifier with secondary emission transmission type dynodes made of semiconductive material with low work function material disposed thereon

Also Published As

Publication number Publication date
US3631303A (en) 1971-12-28
JPS5335434B1 (en) 1978-09-27

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees