GB1275972A - Negative effective electron affinity emitters with drift fields using deep acceptor doping - Google Patents
Negative effective electron affinity emitters with drift fields using deep acceptor dopingInfo
- Publication number
- GB1275972A GB1275972A GB3892969A GB3892969A GB1275972A GB 1275972 A GB1275972 A GB 1275972A GB 3892969 A GB3892969 A GB 3892969A GB 3892969 A GB3892969 A GB 3892969A GB 1275972 A GB1275972 A GB 1275972A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- semi
- work function
- electrons
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 abstract 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 4
- 229910005540 GaP Inorganic materials 0.000 abstract 3
- 230000004888 barrier function Effects 0.000 abstract 3
- 229910052790 beryllium Inorganic materials 0.000 abstract 3
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 abstract 3
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 abstract 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 abstract 2
- 229910052792 caesium Inorganic materials 0.000 abstract 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 229910052742 iron Inorganic materials 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 1
- 239000010406 cathode material Substances 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 229960002089 ferrous chloride Drugs 0.000 abstract 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 abstract 1
- NMCUIPGRVMDVDB-UHFFFAOYSA-L iron dichloride Chemical compound Cl[Fe]Cl NMCUIPGRVMDVDB-UHFFFAOYSA-L 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/32—Secondary-electron-emitting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Abstract
1275972 Cathode materials and processing RCA CORPORATION 4 Aug 1969 [12 Aug 1968] 38929/69 Heading H1D A negative effective electron affinity electron emitter comprises a P-type semi-conductor body 4 having a given energy gap and including a deep acceptor impurity and a layer 5 a few atomic diameters in thickness of an electropositive work function reducing material on a given surface of the body 4, wherein the ionization energy of the deep acceptor, preferably greater than 0À1 ev., does not exceed the difference between the given energy gap and the work function of the layer 5. Further, either a thin P<SP>+</SP> type surface region 3 or a non-injecting Schottky barrier formed by a high work function material is formed on the face of the semiconductor opposite that on which layer 5 is formed to prevent electrons from diffusing away from layer 5. An arrangement, independent of P<SP>+</SP> type region 3 or the Schottky barrier, is provided to bombard the emitter with electrons to excite electrons into the conduction band of the semi-conductor. Emission is thus facilitated since the vacuum energy level at the surface of the emitter, Fig. 2 (not shown), lies below the bottom of the conduction band in the bulk of the semi-conductor body 4 such that an effective negative electron affinity exists at this surface enabling conduction band electrons diffusing to the surface to arrive thereat with sufficient energy to be emitted therefrom. Also, because of sloping of the bands, an internal potential gradient is formed in the semiconductor which impels electrons toward the emitting surface. The semi-conductor body may comprise gallium phosphide and the deep acceptor impurity may be iron, chromium or copper. The work function reducing layer 5 may comprise caesium or caesium and oxygen and the thin P<SP>+</SP> type region 3 formed by a shallow acceptor such as zinc, cadmium or beryllium. As shown, the semi-conductor body is formed with an alumina substrate 2 adjacent to and supporting the P<SP>+</SP> type region 3, and if this substrate 2 is sufficiently thin, e.g. 500 Š or less, and the incident electron energies sufficiently high, e.g. 3000 ev., the emitter may form a transmission type dynode. A polycrystalline (or monocrystalline) gallium phosphide layer 4 doped with iron to a concentration of 10<SP>17</SP>-10<SP>18</SP> atoms/cm.<SP>3</SP>, may be deposited on to a beryllium layer 3 by the vapour phase reaction of gallium chloride, ferrous chloride and phosphine at 800‹ C. During the growth of this layer the beryllium diffuses into a short distance, e.g. 10- 100 Š, into the gallium phosphide to form the P<SP>+</SP> type region. Preferred layer thickness and dopant concentrations are given. Platinum may comprise the high work function metal that is used to provide the Schottky barrier.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US75186268A | 1968-08-12 | 1968-08-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1275972A true GB1275972A (en) | 1972-06-01 |
Family
ID=25023827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3892969A Expired GB1275972A (en) | 1968-08-12 | 1969-08-04 | Negative effective electron affinity emitters with drift fields using deep acceptor doping |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5031787B1 (en) |
| CA (1) | CA927468A (en) |
| DE (1) | DE1941061C3 (en) |
| FR (1) | FR2015511A1 (en) |
| GB (1) | GB1275972A (en) |
| NL (1) | NL6912200A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0041119A1 (en) * | 1980-06-02 | 1981-12-09 | International Business Machines Corporation | Cold electron emission device |
| WO2007040753A2 (en) * | 2005-09-28 | 2007-04-12 | Massachusetts Institute Of Technology | Surface-emission cathodes having cantilevered electrodes |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8104893A (en) * | 1981-10-29 | 1983-05-16 | Philips Nv | CATHODE JET TUBE AND SEMICONDUCTOR DEVICE FOR USE IN SUCH A CATHODE JET TUBE. |
| GB2109159B (en) * | 1981-11-06 | 1985-05-30 | Philips Electronic Associated | Semiconductor electron source for display tubes and other equipment |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1477155A (en) * | 1965-04-22 | 1967-04-14 | Philips Nv | Device for generating a current of electrons |
-
1969
- 1969-06-11 CA CA054088A patent/CA927468A/en not_active Expired
- 1969-08-04 GB GB3892969A patent/GB1275972A/en not_active Expired
- 1969-08-08 FR FR6927314A patent/FR2015511A1/fr not_active Withdrawn
- 1969-08-11 NL NL6912200A patent/NL6912200A/xx unknown
- 1969-08-12 JP JP6380569A patent/JPS5031787B1/ja active Pending
- 1969-08-12 DE DE19691941061 patent/DE1941061C3/en not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0041119A1 (en) * | 1980-06-02 | 1981-12-09 | International Business Machines Corporation | Cold electron emission device |
| WO2007040753A2 (en) * | 2005-09-28 | 2007-04-12 | Massachusetts Institute Of Technology | Surface-emission cathodes having cantilevered electrodes |
| WO2007040753A3 (en) * | 2005-09-28 | 2007-05-31 | Massachusetts Inst Technology | Surface-emission cathodes having cantilevered electrodes |
| US7443090B2 (en) | 2005-09-28 | 2008-10-28 | The Massachusetts Institute Of Technology | Surface-emission cathodes having cantilevered electrodes |
Also Published As
| Publication number | Publication date |
|---|---|
| NL6912200A (en) | 1970-02-16 |
| FR2015511A1 (en) | 1970-04-30 |
| CA927468A (en) | 1973-05-29 |
| DE1941061B2 (en) | 1973-11-08 |
| DE1941061A1 (en) | 1970-08-13 |
| DE1941061C3 (en) | 1974-06-06 |
| JPS5031787B1 (en) | 1975-10-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |