GB1453965A - Electron-emissive cathodes - Google Patents

Electron-emissive cathodes

Info

Publication number
GB1453965A
GB1453965A GB5214173A GB5214173A GB1453965A GB 1453965 A GB1453965 A GB 1453965A GB 5214173 A GB5214173 A GB 5214173A GB 5214173 A GB5214173 A GB 5214173A GB 1453965 A GB1453965 A GB 1453965A
Authority
GB
United Kingdom
Prior art keywords
layer
cathode
concentration
until
photosensitivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5214173A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1453965A publication Critical patent/GB1453965A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
    • H01J43/04—Electron multipliers
    • H01J43/06—Electrode arrangements
    • H01J43/18—Electrode arrangements using essentially more than one dynode
    • H01J43/20—Dynodes consisting of sheet material, e.g. plane, bent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/32—Secondary emission electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes

Abstract

1453965 Photocathodes RCA CORPORATION 9 Nov 1973 [15 Jan 1973] 52141/73 Heading H1D A photocathode comprising an A 3 B 5 semiconductor coated with a Cs containing work function reducing layer is prepared by exposing the semi-conductor to Cs below 100‹C. until the photosensitivity passes a peak, increasing the Cs concentration and the temperature above 100‹C., maintaining the concentration and temperature constant until the photosensitivity stabilizes then reducing the concentration and temperature simultaneously. A photomultiplier tube comprises a metal shield 18, heater 22, metal plate 20 supporting a photocathode 26 of monocrystaline In 1-x Ga x As or GaP, a grid 28 through which incident light passes at right angles, Cu-Be dynodes 30, anode 32, sources of Cs and O (42), (42), Fig. 1 (not shown), a Pt-Sb bead (43) and a layer 44 of Sb on the tube envelope opposite the bead. The layer emits Cs when heated, after initial exposure to Cs vapour and absorbs it on cooling. The tube is baked at 350‹ C. and evacuated. When cool the cathode is heated to near decomposition temperature to provide a suitable surface. After cooling to room temperature the cathode is exposed successively to Cs and O until its photosensitivity passes a peak. This is repeated until a maximum sensitivity is reached. During this process some Cs is absorbed by the layer 44. The tube is heated to 150‹ C. causing the layer 44 to emit Cs. The increased Cs concentration prevents Cs being lost by the cathode. On cooling Cs is absorbed by the layer 44. The cathode may be exposed to F instead of O or to Cs only. The layer 44 may comprise Bi, An or graphite.
GB5214173A 1973-01-15 1973-11-09 Electron-emissive cathodes Expired GB1453965A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US323746A US3858955A (en) 1973-01-15 1973-01-15 Method of making a iii-v compound electron-emissive cathode

Publications (1)

Publication Number Publication Date
GB1453965A true GB1453965A (en) 1976-10-27

Family

ID=23260523

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5214173A Expired GB1453965A (en) 1973-01-15 1973-11-09 Electron-emissive cathodes

Country Status (10)

Country Link
US (1) US3858955A (en)
JP (1) JPS52668B2 (en)
CA (1) CA993030A (en)
DD (1) DD107172A5 (en)
FR (1) FR2214169B1 (en)
GB (1) GB1453965A (en)
IT (1) IT992789B (en)
NL (1) NL7313189A (en)
SE (1) SE387773B (en)
SU (1) SU568405A3 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111863569A (en) * 2020-07-20 2020-10-30 南京工程学院 Activation method for improving gallium arsenide photocathode emission performance

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51121779A (en) * 1975-04-18 1976-10-25 Hitachi Ltd Method of producing gas insulation electric device
US4147950A (en) * 1977-04-04 1979-04-03 The Machlett Laboratories, Inc. Image tube with conditioned input screen
US4426596A (en) 1981-02-24 1984-01-17 Rca Corporation Photomultiplier tube having a heat shield with alkali vapor source attached thereto
US5908699A (en) * 1996-10-11 1999-06-01 Skion Corporation Cold cathode electron emitter and display structure
AT502678B1 (en) 2006-03-24 2007-05-15 Alvatec Alkali Vacuum Technolo Vaporizing source for gas phase generation comprising Bi alloy containing alkali and/or alkali earth metal useful in production of organic light emitting diodes doped with Na and in photocathode production
CN103165361B (en) * 2013-03-13 2015-11-25 清华大学深圳研究生院 A kind of preparation method containing cesium compound negative electrode and this negative electrode

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2401734A (en) * 1940-10-08 1946-06-11 Rca Corp Photoelectric electron multiplier
US2877078A (en) * 1954-04-13 1959-03-10 Du Mont Allen B Lab Inc Method of treating phototubes
US3372967A (en) * 1966-07-06 1968-03-12 Rca Corp Method of making a multi-alkali cathode
US3658400A (en) * 1970-03-02 1972-04-25 Rca Corp Method of making a multialkali photocathode with improved sensitivity to infrared light and a photocathode made thereby
US3712700A (en) * 1971-01-18 1973-01-23 Rca Corp Method of making an electron emitter device
US3753023A (en) * 1971-12-03 1973-08-14 Rca Corp Electron emissive device incorporating a secondary electron emitting material of antimony activated with potassium and cesium

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111863569A (en) * 2020-07-20 2020-10-30 南京工程学院 Activation method for improving gallium arsenide photocathode emission performance
CN111863569B (en) * 2020-07-20 2023-04-18 南京工程学院 Activation method for improving emission performance of gallium arsenide photocathode

Also Published As

Publication number Publication date
SE387773B (en) 1976-09-13
DE2350872A1 (en) 1974-07-18
FR2214169A1 (en) 1974-08-09
DE2350872B2 (en) 1976-05-06
FR2214169B1 (en) 1977-05-27
DD107172A5 (en) 1974-07-12
SU568405A3 (en) 1977-08-05
IT992789B (en) 1975-09-30
CA993030A (en) 1976-07-13
JPS52668B2 (en) 1977-01-10
AU6127873A (en) 1975-04-17
NL7313189A (en) 1974-07-17
JPS49106280A (en) 1974-10-08
US3858955A (en) 1975-01-07

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee