SU568405A3 - Photocathode manufacturing method - Google Patents

Photocathode manufacturing method

Info

Publication number
SU568405A3
SU568405A3 SU7301958617A SU1958617A SU568405A3 SU 568405 A3 SU568405 A3 SU 568405A3 SU 7301958617 A SU7301958617 A SU 7301958617A SU 1958617 A SU1958617 A SU 1958617A SU 568405 A3 SU568405 A3 SU 568405A3
Authority
SU
USSR - Soviet Union
Prior art keywords
temperature
cesium
photocathode
photosensitivity
activating
Prior art date
Application number
SU7301958617A
Other languages
Russian (ru)
Inventor
Германн Соммер Альфред
Original Assignee
Рка Корпорейшн (Фирма)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Рка Корпорейшн (Фирма) filed Critical Рка Корпорейшн (Фирма)
Application granted granted Critical
Publication of SU568405A3 publication Critical patent/SU568405A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/12Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J43/00Secondary-emission tubes; Electron-multiplier tubes
    • H01J43/04Electron multipliers
    • H01J43/06Electrode arrangements
    • H01J43/18Electrode arrangements using essentially more than one dynode
    • H01J43/20Dynodes consisting of sheet material, e.g. plane, bent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00Electrodes common to discharge tubes
    • H01J2201/32Secondary emission electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00Electrodes common to discharge tubes
    • H01J2201/34Photoemissive electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Electron Sources, Ion Sources (AREA)

Description

(54) СПОСОБ ИЗГОТОВЛЕНИЯ ФОТОКАТОДА(54) METHOD FOR MAKING A PHOTOCODE

Claims (2)

Изобретение относитс  к фотоэлектронной технике, в частности к способам, изготовлени  фотокатодов. Известны способы изготовлени  фотокат дов на основе соединений типа А В , вкл чающие активировку цезием при повышенной темлерэлуре ij . Полученные фотокатоды не обладают высокой HjBCTBHTenbHост Известны способы активфовки фотока- тодов на основе соединений типа А В цезием при пониженных температурах ( 100°С). Они обеспечивают высокую фоточувствительность катодов, но стабильность фото увствительности при этом невысока Целью изобретени   вл етс  повышение стабильности фоточувствите ьности. Поставленна  цепь достигаетс  тем,что после окончани  низкотемпературной активировки повышают температуру до 1ОО150 С , активиру  при этом фотокатод цезием давление паров которого повышают в процессе нагрева, затем выдерживают фотокатод при указанной температуре, активиру  при STOvi цезием при посто нном давлении его паров до тех пор, покз vj./ir-чувствительность не перестанет изх;лл( тьс . После этого понижают температуру до комнатной, активиру  при этом пезпем, давление паров которого в процессе охлаждени . Дл  повышени  давлени  ларов цез;;  во врем  нагрева и понижени  давг о};1;  во врем  охлажде.шш используют буфорпы;г источник цезЕ , содержащий вешоство, -le полностью вступившее в реакшпо с цезием. После низкотемпературного прогрева фотокатода (т. е. перед non-beNJOM температуры до 1ОО - 150°С) фотокатод подвергают воздействию кислорода или фтора. В результате стабильность фоточувствительности возрастает. Формула изобретен Способ изготовлен ш фотокатода из соединени  типа А В , включаюший активировку цезием при температ ре ниже до максимума фоточувствительности, о т-The invention relates to photoelectronic technology, in particular to methods for producing photocathodes. Methods are known for making photocathodes based on compounds of type A B, including cesium activation at elevated temperature ij. The obtained photocathodes do not possess high HjBCTBHTenbHost. Methods are known for activating photocathodes based on compounds of type AB with cesium at low temperatures (100 ° C). They provide a high photosensitivity of the cathodes, but the stability of the photo sensitivity is low. The aim of the invention is to increase the stability of the photosensitivity. The delivered chain is achieved by the fact that after the end of low-temperature activation, the temperature is raised to 1OO150 ° C, while activating the photocathode with cesium, the vapor pressure of which is increased during the heating process, then the photocathode is maintained at the specified temperature, and when the vapor pressure is constant, Coverage vj./ir- sensitivity will not cease to be out; l (t. After that, the temperature is lowered to room temperature, while activating pezpem, the vapor pressure of which is in the process of cooling. To increase the pressure of the lars h; while heating and lowering pressure; 1; during cooling, booforps are used; g a source of CEE containing horse meat, -le completely re-entering into cesium, after the low-temperature heating of the photocathode (i.e. before beNJOM temperatures up to 1OO - 150 ° C) the photocathode is exposed to oxygen or fluorine. As a result, the stability of photosensitivity increases. Formula invented The method is made of a photocathode from an AB compound, which activates cesium at a temperature lower than the photosensitivity maximum, o пинающийс  тем, что, с цепью повышени  стабильности фоточувствитепьности , поспе окончанк  низкотемпературной активировки повышают температуру до 100 - 150°С, активиру  при этом цезием, давление которого повышают в процессе нагрева, затем. выдерж11вают фотокатод при указанной температуре, активиру  при этом цезием, при посто нном давпении его паров до тех пор, пока фоточувствительность не перестанет измен тьс , поспе чего понижают температуру до комнатной, активиру  при этом цезием, давление паров которого снижают в процессе охпаждентш.Kicking with the fact that, with a chain to increase the stability of photosensitivity, after the end of low-temperature activation, the temperature is raised to 100-150 ° C, while activating cesium, the pressure of which is increased during heating, then. the photocathode is kept at the specified temperature, activating cesium at the same time, at a constant pressure of its vapor until the photosensitivity ceases to change, which then reduces the temperature to room temperature, activates cesium at the same time, the vapor pressure of which is reduced during the process. Источники информации, прин тые во вкнманке при экспертизе :Sources of information taken in the bait during the examination: l.J.J-ns-t.Te6ev. E-ng-r-s.Joipoi-n 1966, 20, № 3, с. 199.l.J.J-ns-t.Te6ev. E-ng-r-s.Joipoi-n 1966, 20, No. 3, p. 199. 2. Патент США № 3669775, кл. 117224 1972 г. (прототип).2. US patent No. 3669775, cl. 117224 1972 (prototype).
SU7301958617A 1973-01-15 1973-09-26 Photocathode manufacturing method SU568405A3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US323746A US3858955A (en) 1973-01-15 1973-01-15 Method of making a iii-v compound electron-emissive cathode

Publications (1)

Publication Number Publication Date
SU568405A3 true SU568405A3 (en) 1977-08-05

Family

ID=23260523

Family Applications (1)

Application Number Title Priority Date Filing Date
SU7301958617A SU568405A3 (en) 1973-01-15 1973-09-26 Photocathode manufacturing method

Country Status (10)

Country Link
US (1) US3858955A (en)
JP (1) JPS52668B2 (en)
CA (1) CA993030A (en)
DD (1) DD107172A5 (en)
FR (1) FR2214169B1 (en)
GB (1) GB1453965A (en)
IT (1) IT992789B (en)
NL (1) NL7313189A (en)
SE (1) SE387773B (en)
SU (1) SU568405A3 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51121779A (en) * 1975-04-18 1976-10-25 Hitachi Ltd Method of producing gas insulation electric device
US4147950A (en) * 1977-04-04 1979-04-03 The Machlett Laboratories, Inc. Image tube with conditioned input screen
US4426596A (en) 1981-02-24 1984-01-17 Rca Corporation Photomultiplier tube having a heat shield with alkali vapor source attached thereto
US5908699A (en) * 1996-10-11 1999-06-01 Skion Corporation Cold cathode electron emitter and display structure
AT502678B1 (en) 2006-03-24 2007-05-15 Alvatec Alkali Vacuum Technolo Vaporizing source for gas phase generation comprising Bi alloy containing alkali and/or alkali earth metal useful in production of organic light emitting diodes doped with Na and in photocathode production
CN103165361B (en) * 2013-03-13 2015-11-25 清华大学深圳研究生院 A kind of preparation method containing cesium compound negative electrode and this negative electrode
CN111863569B (en) * 2020-07-20 2023-04-18 南京工程学院 Activation method for improving emission performance of gallium arsenide photocathode

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2401734A (en) * 1940-10-08 1946-06-11 Rca Corp Photoelectric electron multiplier
US2877078A (en) * 1954-04-13 1959-03-10 Du Mont Allen B Lab Inc Method of treating phototubes
US3372967A (en) * 1966-07-06 1968-03-12 Rca Corp Method of making a multi-alkali cathode
US3658400A (en) * 1970-03-02 1972-04-25 Rca Corp Method of making a multialkali photocathode with improved sensitivity to infrared light and a photocathode made thereby
US3712700A (en) * 1971-01-18 1973-01-23 Rca Corp Method of making an electron emitter device
US3753023A (en) * 1971-12-03 1973-08-14 Rca Corp Electron emissive device incorporating a secondary electron emitting material of antimony activated with potassium and cesium

Also Published As

Publication number Publication date
US3858955A (en) 1975-01-07
FR2214169B1 (en) 1977-05-27
DE2350872B2 (en) 1976-05-06
DD107172A5 (en) 1974-07-12
AU6127873A (en) 1975-04-17
FR2214169A1 (en) 1974-08-09
NL7313189A (en) 1974-07-17
IT992789B (en) 1975-09-30
CA993030A (en) 1976-07-13
SE387773B (en) 1976-09-13
GB1453965A (en) 1976-10-27
DE2350872A1 (en) 1974-07-18
JPS49106280A (en) 1974-10-08
JPS52668B2 (en) 1977-01-10

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