JPS5335434B1 - - Google Patents

Info

Publication number
JPS5335434B1
JPS5335434B1 JP711099A JP109971A JPS5335434B1 JP S5335434 B1 JPS5335434 B1 JP S5335434B1 JP 711099 A JP711099 A JP 711099A JP 109971 A JP109971 A JP 109971A JP S5335434 B1 JPS5335434 B1 JP S5335434B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP711099A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5335434B1 publication Critical patent/JPS5335434B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/042—Doping, graded, for tapered etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/936—Graded energy gap
JP711099A 1970-01-19 1971-01-19 Pending JPS5335434B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US394870A 1970-01-19 1970-01-19

Publications (1)

Publication Number Publication Date
JPS5335434B1 true JPS5335434B1 (en) 1978-09-27

Family

ID=21708362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP711099A Pending JPS5335434B1 (en) 1970-01-19 1971-01-19

Country Status (3)

Country Link
US (1) US3631303A (en)
JP (1) JPS5335434B1 (en)
GB (1) GB1299549A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5441134U (en) * 1977-08-26 1979-03-19
JPS54172622U (en) * 1977-08-26 1979-12-06
WO1999016098A1 (en) * 1997-09-24 1999-04-01 Hamamatsu Photonics K.K. Semiconductor photoelectric surface
KR20230093022A (en) 2020-11-13 2023-06-26 닛폰세이테츠 가부시키가이샤 surface treatment metal plate

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1478453A (en) * 1971-11-29 1977-06-29 Secr Defence Photocathodes
US3981755A (en) * 1972-11-24 1976-09-21 U.S. Philips Corporation Photocathode manufacture
US3958143A (en) * 1973-01-15 1976-05-18 Varian Associates Long-wavelength photoemission cathode
GB1439822A (en) * 1973-02-06 1976-06-16 Standard Telephones Cables Ltd Gallium arsenide photocathodes
SU519042A1 (en) * 1974-05-21 1978-07-25 Предприятие П/Я М-5273 Photoelectronic emitter
US3986065A (en) * 1974-10-24 1976-10-12 Rca Corporation Insulating nitride compounds as electron emitters
GB1528192A (en) * 1975-03-10 1978-10-11 Secr Defence Surface treatment of iii-v compound crystals
US4066483A (en) * 1976-07-07 1978-01-03 Western Electric Company, Inc. Gate-controlled bidirectional switching device
DE2909956A1 (en) * 1979-03-14 1980-09-18 Licentia Gmbh SEMICONDUCTOR GLASS COMPOSITE
FR2507386A1 (en) * 1981-06-03 1982-12-10 Labo Electronique Physique SEMICONDUCTOR DEVICE, ELECTRON TRANSMITTER, WITH ACTIVE LAYER HAVING A DOPING GRADIENT
NL8500413A (en) * 1985-02-14 1986-09-01 Philips Nv ELECTRON BUNDLE DEVICE WITH A SEMICONDUCTOR ELECTRON EMITTER.
FR2592217B1 (en) * 1985-12-20 1988-02-05 Thomson Csf INTERNAL AMPLIFICATION PHOTOCATHODE
US5315126A (en) * 1992-10-13 1994-05-24 Itt Corporation Highly doped surface layer for negative electron affinity devices
US5404026A (en) * 1993-01-14 1995-04-04 Regents Of The University Of California Infrared-sensitive photocathode
US5576559A (en) * 1994-11-01 1996-11-19 Intevac, Inc. Heterojunction electron transfer device
US5908699A (en) * 1996-10-11 1999-06-01 Skion Corporation Cold cathode electron emitter and display structure
US5712490A (en) * 1996-11-21 1998-01-27 Itt Industries, Inc. Ramp cathode structures for vacuum emission
US7015467B2 (en) * 2002-10-10 2006-03-21 Applied Materials, Inc. Generating electrons with an activated photocathode
US7446474B2 (en) * 2002-10-10 2008-11-04 Applied Materials, Inc. Hetero-junction electron emitter with Group III nitride and activated alkali halide
US7161162B2 (en) * 2002-10-10 2007-01-09 Applied Materials, Inc. Electron beam pattern generator with photocathode comprising low work function cesium halide
US7042060B2 (en) * 2003-01-31 2006-05-09 Intevac, Inc. Backside thinning of image array devices
US7005637B2 (en) * 2003-01-31 2006-02-28 Intevac, Inc. Backside thinning of image array devices
US7531826B2 (en) * 2005-06-01 2009-05-12 Intevac, Inc. Photocathode structure and operation
JP5342769B2 (en) * 2006-12-28 2013-11-13 浜松ホトニクス株式会社 Photocathode, electron tube and photomultiplier tube
US8362678B2 (en) * 2008-11-27 2013-01-29 Samsung Display Co., Ltd. Lamp structure and liquid crystal display apparatus having the same
CN111627821B (en) * 2020-06-05 2023-09-12 温州大学 Electron-hole reversible doping method for multi-layer molybdenum ditelluride field effect transistor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3059123A (en) * 1954-10-28 1962-10-16 Bell Telephone Labor Inc Internal field transistor
US3132057A (en) * 1959-01-29 1964-05-05 Raytheon Co Graded energy gap semiconductive device
US3304445A (en) * 1961-02-13 1967-02-14 Martin Marietta Corp Semiconductor battery
NL147572B (en) * 1964-12-02 1975-10-15 Philips Nv ELECTRIC DISCHARGE TUBE WITH A PHOTO CATHOD.
US3478213A (en) * 1967-09-05 1969-11-11 Rca Corp Photomultiplier or image amplifier with secondary emission transmission type dynodes made of semiconductive material with low work function material disposed thereon

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5441134U (en) * 1977-08-26 1979-03-19
JPS54172622U (en) * 1977-08-26 1979-12-06
WO1999016098A1 (en) * 1997-09-24 1999-04-01 Hamamatsu Photonics K.K. Semiconductor photoelectric surface
KR20230093022A (en) 2020-11-13 2023-06-26 닛폰세이테츠 가부시키가이샤 surface treatment metal plate

Also Published As

Publication number Publication date
GB1299549A (en) 1972-12-13
US3631303A (en) 1971-12-28

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