GB1452917A - Transmission photocathode device and method of making the same - Google Patents

Transmission photocathode device and method of making the same

Info

Publication number
GB1452917A
GB1452917A GB5214573A GB5214573A GB1452917A GB 1452917 A GB1452917 A GB 1452917A GB 5214573 A GB5214573 A GB 5214573A GB 5214573 A GB5214573 A GB 5214573A GB 1452917 A GB1452917 A GB 1452917A
Authority
GB
United Kingdom
Prior art keywords
layer
layers
substrate
absorption layer
transmission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5214573A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1452917A publication Critical patent/GB1452917A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)

Abstract

1452917 Photocathodes RCA CORPORATION 9 Nov 1973 [27 Nov 1972] 52145/73 Heading H1D A transmission type photocathode 10 comprises a radiation absorption layer 14 of P- type semi-conductor, a radiation transmission layer 12 epitaxially grown on the first layer and a coating 16 of work function reducing material on the other surface of the absorption layer wherein the lattice parameters of the layers are within 0.5% and the band gap energy of the transmission layer is at least 1À1 e.v. and is higher than that of the absorption layer. The cathode is formed by liquid phase epitaxy using a boat with 3 wells beneath which a slider carrying the substrate 18 is moved. The first well contains GaAs in molten Ga and includes Ge. The second well contains AlGaAs in molten Ga and the third well is empty. The apparatus is heated to 920‹ C. in pure H 2 . As the substrate is moved beneath the wells layers of GaAs doped with Ge and Al x Ga 1-x As are formed. Part of the substrate is removed and Cs and O deposited to form the layer 16. The source of Cs is a mixture of Cs chromate and Si or sintered Al 2 O 3 impregnated with Cs carbonate. The layers 14, 12 may be vapour deposited when Zn replaces Ge as dopant. Cathodes comprising layers of GaSb and AlGaSb; GaP and AlGaP; AlP and GaP.
GB5214573A 1972-11-27 1973-11-09 Transmission photocathode device and method of making the same Expired GB1452917A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US309756A US3914136A (en) 1972-11-27 1972-11-27 Method of making a transmission photocathode device

Publications (1)

Publication Number Publication Date
GB1452917A true GB1452917A (en) 1976-10-20

Family

ID=23199555

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5214573A Expired GB1452917A (en) 1972-11-27 1973-11-09 Transmission photocathode device and method of making the same

Country Status (8)

Country Link
US (1) US3914136A (en)
JP (1) JPS531142B2 (en)
CA (1) CA998155A (en)
DE (1) DE2359072C3 (en)
FR (1) FR2208187B1 (en)
GB (1) GB1452917A (en)
IT (1) IT998785B (en)
NL (1) NL7316145A (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4015284A (en) * 1974-03-27 1977-03-29 Hamamatsu Terebi Kabushiki Kaisha Semiconductor photoelectron emission device
US3959045A (en) * 1974-11-18 1976-05-25 Varian Associates Process for making III-V devices
US3960620A (en) * 1975-04-21 1976-06-01 Rca Corporation Method of making a transmission mode semiconductor photocathode
US3959037A (en) * 1975-04-30 1976-05-25 The United States Of America As Represented By The Secretary Of The Army Electron emitter and method of fabrication
US3959038A (en) * 1975-04-30 1976-05-25 The United States Of America As Represented By The Secretary Of The Army Electron emitter and method of fabrication
US3972750A (en) * 1975-04-30 1976-08-03 The United States Of America As Represented By The Secretary Of The Army Electron emitter and method of fabrication
US4008106A (en) * 1975-11-13 1977-02-15 The United States Of America As Represented By The Secretary Of The Army Method of fabricating III-V photocathodes
US4000503A (en) * 1976-01-02 1976-12-28 International Audio Visual, Inc. Cold cathode for infrared image tube
US4107723A (en) * 1977-05-02 1978-08-15 Hughes Aircraft Company High bandgap window layer for GaAs solar cells and fabrication process therefor
DE2842492C2 (en) * 1978-09-29 1986-04-17 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Process for the production of a photocathode consisting of a semiconductor-glass composite material
US4498225A (en) * 1981-05-06 1985-02-12 The United States Of America As Represented By The Secretary Of The Army Method of forming variable sensitivity transmission mode negative electron affinity photocathode
US4539687A (en) * 1982-12-27 1985-09-03 At&T Bell Laboratories Semiconductor laser CRT
US4906894A (en) * 1986-06-19 1990-03-06 Canon Kabushiki Kaisha Photoelectron beam converting device and method of driving the same
US4896035A (en) * 1987-08-06 1990-01-23 Phrasor Scientific, Inc. High mass ion detection system and method
US4830984A (en) * 1987-08-19 1989-05-16 Texas Instruments Incorporated Method for heteroepitaxial growth using tensioning layer on rear substrate surface
US4782028A (en) * 1987-08-27 1988-11-01 Santa Barbara Research Center Process methodology for two-sided fabrication of devices on thinned silicon
US4853595A (en) * 1987-08-31 1989-08-01 Alfano Robert R Photomultiplier tube having a transmission strip line photocathode and system for use therewith
US5404026A (en) * 1993-01-14 1995-04-04 Regents Of The University Of California Infrared-sensitive photocathode
US5506402A (en) * 1994-07-29 1996-04-09 Varo Inc. Transmission mode 1.06 μM photocathode for night vision having an indium gallium arsenide active layer and an aluminum gallium azsenide window layer
US6005257A (en) * 1995-09-13 1999-12-21 Litton Systems, Inc. Transmission mode photocathode with multilayer active layer for night vision and method
US5977705A (en) * 1996-04-29 1999-11-02 Litton Systems, Inc. Photocathode and image intensifier tube having an active layer comprised substantially of amorphic diamond-like carbon, diamond, or a combination of both
US6019913A (en) * 1998-05-18 2000-02-01 The Regents Of The University Of California Low work function, stable compound clusters and generation process
US7446474B2 (en) * 2002-10-10 2008-11-04 Applied Materials, Inc. Hetero-junction electron emitter with Group III nitride and activated alkali halide
US7015467B2 (en) * 2002-10-10 2006-03-21 Applied Materials, Inc. Generating electrons with an activated photocathode

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL281602A (en) * 1959-06-18
US3478213A (en) * 1967-09-05 1969-11-11 Rca Corp Photomultiplier or image amplifier with secondary emission transmission type dynodes made of semiconductive material with low work function material disposed thereon
US3537029A (en) * 1968-06-10 1970-10-27 Rca Corp Semiconductor laser producing light at two wavelengths simultaneously
US3560275A (en) * 1968-11-08 1971-02-02 Rca Corp Fabricating semiconductor devices
US3565702A (en) * 1969-02-14 1971-02-23 Rca Corp Depositing successive epitaxial semiconductive layers from the liquid phase
JPS5141318B1 (en) * 1969-04-01 1976-11-09
US3672992A (en) * 1969-07-30 1972-06-27 Gen Electric Method of forming group iii-v compound photoemitters having a high quantum efficiency and long wavelength response
US3622442A (en) * 1969-08-21 1971-11-23 Du Pont Non-woven fibrous webs bonded with cross-linked ethylene/carboxylic acid copolymers and methods of making same
GB1239893A (en) * 1970-03-05 1971-07-21 Standard Telephones Cables Ltd Improvements in or relating to photocathodes
US3770518A (en) * 1971-01-28 1973-11-06 Varian Associates Method of making gallium arsenide semiconductive devices
US3699401A (en) * 1971-05-17 1972-10-17 Rca Corp Photoemissive electron tube comprising a thin film transmissive semiconductor photocathode structure

Also Published As

Publication number Publication date
CA998155A (en) 1976-10-05
FR2208187B1 (en) 1978-06-16
USB309756I5 (en) 1975-01-28
JPS4984575A (en) 1974-08-14
DE2359072A1 (en) 1974-06-06
DE2359072C3 (en) 1978-11-09
NL7316145A (en) 1974-05-29
IT998785B (en) 1976-02-20
FR2208187A1 (en) 1974-06-21
DE2359072B2 (en) 1978-03-30
JPS531142B2 (en) 1978-01-14
US3914136A (en) 1975-10-21

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee