JPS5524454A - Insulating gate type field effect transistor - Google Patents

Insulating gate type field effect transistor

Info

Publication number
JPS5524454A
JPS5524454A JP9706978A JP9706978A JPS5524454A JP S5524454 A JPS5524454 A JP S5524454A JP 9706978 A JP9706978 A JP 9706978A JP 9706978 A JP9706978 A JP 9706978A JP S5524454 A JPS5524454 A JP S5524454A
Authority
JP
Japan
Prior art keywords
melting point
nitride
gate electrode
high melting
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9706978A
Other languages
Japanese (ja)
Other versions
JPS6327864B2 (en
Inventor
Hidekazu Okabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9706978A priority Critical patent/JPS5524454A/en
Publication of JPS5524454A publication Critical patent/JPS5524454A/en
Publication of JPS6327864B2 publication Critical patent/JPS6327864B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To make a gate electrode of the film of, or the complex film containing, the nitride of a high-melting point metal or an alloy thereof for reducing the unstability thereof with respect to alkali ions and preventing the generation of stress at the interface thereof with insulating film.
CONSTITUTION: A gate electrode 11 is made of the MoxNy layer of the nitride of a high-melting point such as Mo for example. The nitride MxNy of said high melting point metal functions as a more reliable barrier against the diffusion of impurities such as alkali ions than that offered when said high melting point is used separately. Therefore, said gate electrode 11 can be reduced in the unstability due to the alkali ion of a metallic gate construction and improved in reliability, and is superior in oxidation resistance to said high melting point metal. Further, the close contact thereof can be attained with most of the kinds of substrates so that stress can be reduced very small by selecting proper nitriding degree. If said gate electrode 11 is made of two wafer layers of the nitride of a high melting point such as MoxNy film 21a and Mo film 21b for example and of a high melting point metal, the resistance value thereof can be decreased smaller than one several-th.
COPYRIGHT: (C)1980,JPO&Japio
JP9706978A 1978-08-08 1978-08-08 Insulating gate type field effect transistor Granted JPS5524454A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9706978A JPS5524454A (en) 1978-08-08 1978-08-08 Insulating gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9706978A JPS5524454A (en) 1978-08-08 1978-08-08 Insulating gate type field effect transistor

Publications (2)

Publication Number Publication Date
JPS5524454A true JPS5524454A (en) 1980-02-21
JPS6327864B2 JPS6327864B2 (en) 1988-06-06

Family

ID=14182345

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9706978A Granted JPS5524454A (en) 1978-08-08 1978-08-08 Insulating gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5524454A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5877257A (en) * 1981-11-04 1983-05-10 Hitachi Ltd Superiorly high reliable electrode
US4570328A (en) * 1983-03-07 1986-02-18 Motorola, Inc. Method of producing titanium nitride MOS device gate electrode
US4605947A (en) * 1983-03-07 1986-08-12 Motorola Inc. Titanium nitride MOS device gate electrode and method of producing
JPS6254960A (en) * 1985-09-04 1987-03-10 Nec Corp Mis field effect transistor
JPS63174371A (en) * 1987-01-13 1988-07-18 Nec Corp Field-effect transistor
US7816191B2 (en) 1999-06-29 2010-10-19 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
US7906429B2 (en) * 1999-06-22 2011-03-15 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS507430A (en) * 1973-05-18 1975-01-25
JPS5365088A (en) * 1976-11-22 1978-06-10 Nec Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS507430A (en) * 1973-05-18 1975-01-25
JPS5365088A (en) * 1976-11-22 1978-06-10 Nec Corp Semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5877257A (en) * 1981-11-04 1983-05-10 Hitachi Ltd Superiorly high reliable electrode
US4570328A (en) * 1983-03-07 1986-02-18 Motorola, Inc. Method of producing titanium nitride MOS device gate electrode
US4605947A (en) * 1983-03-07 1986-08-12 Motorola Inc. Titanium nitride MOS device gate electrode and method of producing
JPS6254960A (en) * 1985-09-04 1987-03-10 Nec Corp Mis field effect transistor
JPS63174371A (en) * 1987-01-13 1988-07-18 Nec Corp Field-effect transistor
US7906429B2 (en) * 1999-06-22 2011-03-15 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
US8357611B2 (en) 1999-06-22 2013-01-22 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
US9660159B2 (en) 1999-06-22 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
US7816191B2 (en) 1999-06-29 2010-10-19 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof

Also Published As

Publication number Publication date
JPS6327864B2 (en) 1988-06-06

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