JPS5578578A - Manufacture of schottky barrier diode - Google Patents

Manufacture of schottky barrier diode

Info

Publication number
JPS5578578A
JPS5578578A JP15196978A JP15196978A JPS5578578A JP S5578578 A JPS5578578 A JP S5578578A JP 15196978 A JP15196978 A JP 15196978A JP 15196978 A JP15196978 A JP 15196978A JP S5578578 A JPS5578578 A JP S5578578A
Authority
JP
Japan
Prior art keywords
layer
silicon
manufacture
barrier
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15196978A
Other languages
Japanese (ja)
Inventor
Kazuo Watanabe
Minoru Kato
Shiyouhei Imada
Shigeru Miyagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15196978A priority Critical patent/JPS5578578A/en
Publication of JPS5578578A publication Critical patent/JPS5578578A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To increase dielectric strength and to decrease the current in the reverse direction by selectively forming a barrier metal layer on one main surface of a silicon substrate and then simultaneously forming a protecting film and a metal-silicon alloy layer on the main surface of the substrate.
CONSTITUTION: An n--layer 11b and an N++-layer 5 are formed on both surfaces of an n+ silicon substrate 1a, and a barrier metal layer 23 is deposited on the top surface. Then, an silicon oxide layer 12' and a sintered layer 13 of a barrier-metal silicon are simultaneously formed, and a window is opened through the silicon oxide layer 12'. Then, an electrode metal layer 14' is evaporated so that it is larger than the barrier metal layer 23.
COPYRIGHT: (C)1980,JPO&Japio
JP15196978A 1978-12-11 1978-12-11 Manufacture of schottky barrier diode Pending JPS5578578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15196978A JPS5578578A (en) 1978-12-11 1978-12-11 Manufacture of schottky barrier diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15196978A JPS5578578A (en) 1978-12-11 1978-12-11 Manufacture of schottky barrier diode

Publications (1)

Publication Number Publication Date
JPS5578578A true JPS5578578A (en) 1980-06-13

Family

ID=15530169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15196978A Pending JPS5578578A (en) 1978-12-11 1978-12-11 Manufacture of schottky barrier diode

Country Status (1)

Country Link
JP (1) JPS5578578A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5982774A (en) * 1982-11-02 1984-05-12 Nec Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5982774A (en) * 1982-11-02 1984-05-12 Nec Corp Semiconductor device

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