GB937151A - Method of manufacturing selenium rectifiers and rectifiers manufactured thereby - Google Patents

Method of manufacturing selenium rectifiers and rectifiers manufactured thereby

Info

Publication number
GB937151A
GB937151A GB9232/61A GB923261A GB937151A GB 937151 A GB937151 A GB 937151A GB 9232/61 A GB9232/61 A GB 9232/61A GB 923261 A GB923261 A GB 923261A GB 937151 A GB937151 A GB 937151A
Authority
GB
United Kingdom
Prior art keywords
selenium
coating
depositing
barrier layer
rectifiers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB9232/61A
Inventor
Joseph Gilbert
John Barron
Neville Maurice Sadler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake and Signal Co Ltd filed Critical Westinghouse Brake and Signal Co Ltd
Priority to GB9232/61A priority Critical patent/GB937151A/en
Priority to DEW31482A priority patent/DE1239779B/en
Priority to FR890826A priority patent/FR1323778A/en
Publication of GB937151A publication Critical patent/GB937151A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/105—Treatment of the surface of the selenium or tellurium layer after having been made conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination

Abstract

937,151. Selenium rectifiers. WESTING- HOUSE BRAKE & SIGNAL CO. Ltd. Jan. 9, 1962 [March 14, 1961], No. 9232/61. Class 37. A method of manufacturing a selenium rectifier includes the steps of coating a metallic base with selenium having a halogen (preferably chlorine) content between 50 and 600 parts per million by weight, the coating being applied by vaporization, crystallizing the coating, depositing by vaporization on the coating a barrier layer, the layer comprising a mixture of cadmium sulphide and selenium together with thallium, depositing a counter-electrode on the barrier layer and subsequently annealing the barrier layer so as to fuse the counter-electrode. The barrier layer may be applied in two stages, the first stage consisting of depositing pure selenium and the second stage consisting of depositing a mixture of cadmiun sulphide and selenium together with thallium. The metallic base is of steel or aluminium, roughened by shot-blasting, then nickel-plated and subsequently coated with a mixture of tellurium and bismuth applied in vacuo. The counter electrode is a tin-cadmium alloy.
GB9232/61A 1961-03-14 1961-03-14 Method of manufacturing selenium rectifiers and rectifiers manufactured thereby Expired GB937151A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB9232/61A GB937151A (en) 1961-03-14 1961-03-14 Method of manufacturing selenium rectifiers and rectifiers manufactured thereby
DEW31482A DE1239779B (en) 1961-03-14 1962-01-17 Process for the manufacture of selenium rectifiers
FR890826A FR1323778A (en) 1961-03-14 1962-03-13 Manufacturing process of selenium rectifiers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9232/61A GB937151A (en) 1961-03-14 1961-03-14 Method of manufacturing selenium rectifiers and rectifiers manufactured thereby

Publications (1)

Publication Number Publication Date
GB937151A true GB937151A (en) 1963-09-18

Family

ID=9867955

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9232/61A Expired GB937151A (en) 1961-03-14 1961-03-14 Method of manufacturing selenium rectifiers and rectifiers manufactured thereby

Country Status (2)

Country Link
DE (1) DE1239779B (en)
GB (1) GB937151A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1223955B (en) * 1964-08-05 1966-09-01 Siemens Ag Process for the production of high-blocking selenium rectifier tablets with a small diameter

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE509989A (en) * 1939-01-22
DE961365C (en) * 1941-12-13 1957-04-04 Siemens Ag Electrical semiconductor made from selenium, especially for dry rectifiers
DE820318C (en) * 1948-10-02 1951-11-08 Siemens & Halske A G Selenium bodies, especially for dry rectifiers, photo elements and light-sensitive resistance cells
DE925847C (en) * 1949-10-31 1955-03-31 Licentia Gmbh Method of manufacturing selenium rectifiers
DE1101626B (en) * 1953-11-30 1961-03-09 Siemens Ag Process for the manufacture of selenium rectifiers
US2853663A (en) * 1954-07-08 1958-09-23 Vickers Inc Power transmission

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1223955B (en) * 1964-08-05 1966-09-01 Siemens Ag Process for the production of high-blocking selenium rectifier tablets with a small diameter

Also Published As

Publication number Publication date
DE1239779B (en) 1967-05-03

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