DE665416C - Process for the production of a photocell which itself generates a voltage when exposed to light - Google Patents

Process for the production of a photocell which itself generates a voltage when exposed to light

Info

Publication number
DE665416C
DE665416C DEF78719D DEF0078719D DE665416C DE 665416 C DE665416 C DE 665416C DE F78719 D DEF78719 D DE F78719D DE F0078719 D DEF0078719 D DE F0078719D DE 665416 C DE665416 C DE 665416C
Authority
DE
Germany
Prior art keywords
light
photocell
voltage
production
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DEF78719D
Other languages
German (de)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to DEF78719D priority Critical patent/DE665416C/en
Application granted granted Critical
Publication of DE665416C publication Critical patent/DE665416C/en
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Description

Die Erfindung bezieht sich auf ein Verfahren zur Herstellung einer Photozelle, die bei Belichtung selbst eine Spannung erzeugt. FCs wurde bereits vorgeschlagen, zur Herstellung solcher Photozellen auf der kristallinen lichtempfindlichen Selenschicht die lichtdurchlässige, leitende Deckschicht im fein verteilten Zustand durch ein Aufschleuderverfahren, z. B. das Schoopsche Aufspritzverfahren oder ein Auf preß- oder Aufreibverfahren, aufzubringen.The invention relates to a method for producing a photocell which generated a tension upon exposure. FCs have already been proposed for manufacture such photocells on the crystalline photosensitive selenium layer the translucent, conductive top layer in a finely distributed state by a spin-on process, z. B. Schoop's spray-on process or a press-on or rubbing-on process, to raise.

Hierbei wird eine Photozelle, die bei Belichtung selbst eine Spannung erzeugt und bei der eine Selenschicht als lichtelektrischer Stoff zwischen einer Trägerelektrode und einer durchsichtigen Elektrode angeordnet ist, in der Weise hergestellt, daß auf die Trägerelektrode Selen aufgeschmolzen, hierauf durch eine weitere Erhitzung das Selen formiert, d. h. in die kristalline Modifikation, überführt und nunmehr als lichtdurchlässige Deckelektrode ein leitendes Material in fein verteiltem Zustand mit Hilfe eines Aufreibverfahrens oder eines Aufpreßverfahrens oder eines derartigen Aufschleuderverfahrens, z. B. des Schoopschen Aufspritzverfahrens, auf die polykristalline Oberfläche des lichtempfindlichen Selens so aufgebracht wird, daß das Material der Deckschicht mit dem Material der lichtempfindlichen Schicht eine innige, lückenlose Verbindung an allen Punkten der kristallinen Oberfläche bei geringem Übergangswiderstand derart eingeht, daß die den Elektronenaustritt hemmenden Einflüsse im Zellaufbau beseitigt werden und ein für technische Meßzwecke ausreichender Strom entsteht. Here, a photocell, which itself generates a voltage when exposed, and with a selenium layer as a photoelectric substance between a carrier electrode and a transparent electrode is arranged in such a way that on the Carrier electrode melted selenium, then the selenium by further heating formed, d. H. into the crystalline modification, transferred and now as translucent Cover electrode a conductive material in a finely divided state with the help of a rubbing process or a press-on process or such a spin-on process, e.g. B. Schoop's spray-on process, onto the polycrystalline surface of the light-sensitive Selenium is applied so that the material of the top layer with the material the light-sensitive layer an intimate, gapless connection at all points of the crystalline surface with low contact resistance is received in such a way that the Influences that inhibit the escape of electrons in the cell structure are eliminated and one for technical Sufficient current is generated for measuring purposes.

Dabei kann die lichtempfindliche Substanzschicht auf eine aufgerauhte Trägerplatte aufgebracht werden.The light-sensitive substance layer can be applied to a roughened carrier plate will.

Erfmdungsgemäß wird dieses Verfahren in der Weise verbessert und weitergebildet, daß für die Deckelektrode Woodmetall, d. h. eine Legierung aus Cadmium, Wismut, Zinn und Blei, Verwendung findet. Es hat sich gezeigt, daß hierdurch in selten hohem Maße die innige mechanische Verbindung der durchscheinenden Deckschicht mit der lichtempfindlichen Schicht und damit die Erzeugung eines hohen Stromes gewährleistet ist.According to the invention, this method is improved and developed in such a way that for the Woodmetall cover electrode, d. H. an alloy of cadmium, bismuth, and tin Lead, is used. It has been shown that this rarely causes the intimate mechanical connection of the translucent cover layer with the light-sensitive Layer and thus the generation of a high current is guaranteed.

Es ist auch möglich, durch Anwendung mäßiger Erwärmung eine schwache Legierung oder oberflächliche chemische Verbindung zwischen dem Stoff der Deckelektrode und dem Stoff der lichtempfindlichen Substanzschicht zu erzeugen.It is also possible to make a weak alloy by applying moderate heating or superficial chemical bond between the material of the cover electrode and the material of the photosensitive substance layer to create.

Claims (1)

Patentanspruch ·.Claim ·. Verfahren zur Herstellung einer P'hotozelle, die bei Belichtung selbst eine Spannung erzeugt und bei der auf der kristallinen lichtempfindlichen Selenschicht die lichtdurchlässige, leitende Deckelektrode in fein, verteiltem Zustand durch ein Aufschleuderverfahren, wie z. B. das Schoopsehe Aufspritzverfahren, oder ein Aufreibe- oder Aufpreßverfahren aufgebracht ist, dadurch gekennzeichnet, daß für diese Deckelektrode Woodmetall verwendet wird.Process for the production of a photocell, which itself generates a voltage on exposure and which on the crystalline one light-sensitive selenium layer the translucent, conductive cover electrode in a finely distributed state by a spin-on process, such as B. the Schoopsehe spray-on process, or a rubbing or press-on process applied is, characterized in that Woodmetall is used for this cover electrode.
DEF78719D 1930-08-13 1930-08-14 Process for the production of a photocell which itself generates a voltage when exposed to light Expired DE665416C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DEF78719D DE665416C (en) 1930-08-13 1930-08-14 Process for the production of a photocell which itself generates a voltage when exposed to light

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEF0078719 1930-08-13
DEF78719D DE665416C (en) 1930-08-13 1930-08-14 Process for the production of a photocell which itself generates a voltage when exposed to light

Publications (1)

Publication Number Publication Date
DE665416C true DE665416C (en) 1938-09-24

Family

ID=25977851

Family Applications (1)

Application Number Title Priority Date Filing Date
DEF78719D Expired DE665416C (en) 1930-08-13 1930-08-14 Process for the production of a photocell which itself generates a voltage when exposed to light

Country Status (1)

Country Link
DE (1) DE665416C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1015542B (en) * 1939-01-22 1957-09-12 Standard Elektrik Ag Method of manufacturing selenium rectifier plates

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1015542B (en) * 1939-01-22 1957-09-12 Standard Elektrik Ag Method of manufacturing selenium rectifier plates

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