GB500094A - Improvements in and relating to dry rectifiers and photo-electric cells - Google Patents
Improvements in and relating to dry rectifiers and photo-electric cellsInfo
- Publication number
- GB500094A GB500094A GB16681/38A GB1668138A GB500094A GB 500094 A GB500094 A GB 500094A GB 16681/38 A GB16681/38 A GB 16681/38A GB 1668138 A GB1668138 A GB 1668138A GB 500094 A GB500094 A GB 500094A
- Authority
- GB
- United Kingdom
- Prior art keywords
- photo
- electric cells
- relating
- june
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 229910052711 selenium Inorganic materials 0.000 abstract 1
- 239000011669 selenium Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/08—Preparation of the foundation plate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
500,094. Asymmetrically - conducting resistances. BRITISH THOMSON-HOUSTON CO., Ltd. Junc 3, 1938, Nos. 16687 and 16688. Convention dates, June 5, 1937 and June 12, 1937. Addition to 497,034. Drawings to Specification. [Class 37] [Also in Group XL] The process according to the parent Specification is utilized for the manufacture of photo-electric cells, and, where metal is used for the treatment of the superficial oxide layer, such metal treatment is continued after the oxide film has been rendered conductive, so as to form a film on the surface, whereby the formation of the crystalline modification of the selenium deposited thereon is facilitated. This latter part of the process is applicable to the manufacture of dry rectifiers and of photoelectric cells.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEA0083212 | 1937-06-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB500094A true GB500094A (en) | 1939-02-02 |
Family
ID=6948830
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB16681/38A Expired GB500094A (en) | 1937-06-05 | 1938-06-03 | Improvements in and relating to dry rectifiers and photo-electric cells |
Country Status (2)
Country | Link |
---|---|
GB (1) | GB500094A (en) |
NL (1) | NL54183C (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2613301A (en) * | 1949-01-17 | 1952-10-07 | Westinghouse Freins & Signaux | Process of manufacturing photoelectric cells |
DE971742C (en) * | 1943-07-08 | 1959-03-19 | Aeg | Process for the production of asymmetrically conductive systems for use as voltage-dependent capacitors |
-
0
- NL NL54183D patent/NL54183C/xx active
-
1938
- 1938-06-03 GB GB16681/38A patent/GB500094A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE971742C (en) * | 1943-07-08 | 1959-03-19 | Aeg | Process for the production of asymmetrically conductive systems for use as voltage-dependent capacitors |
US2613301A (en) * | 1949-01-17 | 1952-10-07 | Westinghouse Freins & Signaux | Process of manufacturing photoelectric cells |
Also Published As
Publication number | Publication date |
---|---|
NL54183C (en) | 1900-01-01 |
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