GB910049A - Improvements in or relating to semiconductor devices - Google Patents

Improvements in or relating to semiconductor devices

Info

Publication number
GB910049A
GB910049A GB2395260A GB2395260A GB910049A GB 910049 A GB910049 A GB 910049A GB 2395260 A GB2395260 A GB 2395260A GB 2395260 A GB2395260 A GB 2395260A GB 910049 A GB910049 A GB 910049A
Authority
GB
United Kingdom
Prior art keywords
type
junctions
junction
july
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2395260A
Inventor
Cyril Francis Drake
Robert Anthony Hyman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB2395260A priority Critical patent/GB910049A/en
Publication of GB910049A publication Critical patent/GB910049A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

910,049. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. July 7, 1961 [July 8, 1960], No. 23952/60. Class 37. A semi-conductor device has two regions 8, 9 of one type (P) separated by a region 7 of the other type (N) at least one of the junctions being of the tunnel diode type. Fig. 1 illustrates the current voltage characteristic of a tunnel diode type junction and in one embodiment both junctions are of this type, the junction 7-8 being biased to the portion 3-4 of the curve and the junction 7-9 to the portion 2-3. The device then behaves as a transistor having portions 7, 8 and 9 as base emitter and collector respectively. Alternatively both junctions may be operated as two tunnel diodes in series. The device may be constructed of germanium, silicon, or of gallium, or indium-arsenide which must be cooled.
GB2395260A 1960-07-08 1960-07-08 Improvements in or relating to semiconductor devices Expired GB910049A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB2395260A GB910049A (en) 1960-07-08 1960-07-08 Improvements in or relating to semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2395260A GB910049A (en) 1960-07-08 1960-07-08 Improvements in or relating to semiconductor devices

Publications (1)

Publication Number Publication Date
GB910049A true GB910049A (en) 1962-11-07

Family

ID=10203987

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2395260A Expired GB910049A (en) 1960-07-08 1960-07-08 Improvements in or relating to semiconductor devices

Country Status (1)

Country Link
GB (1) GB910049A (en)

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