GB1035727A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1035727A
GB1035727A GB4653464A GB4653464A GB1035727A GB 1035727 A GB1035727 A GB 1035727A GB 4653464 A GB4653464 A GB 4653464A GB 4653464 A GB4653464 A GB 4653464A GB 1035727 A GB1035727 A GB 1035727A
Authority
GB
United Kingdom
Prior art keywords
emitter
base
transistors
electrode
perimeters
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4653464A
Inventor
Roger Cullis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Publication of GB1035727A publication Critical patent/GB1035727A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)

Abstract

1,035,727. Transistors. STANDARD TELEPHONES & CABLES Ltd. Dec. 22, 1965, No. 46534/64. Heading H1K. A monolithic semi-conductor device comprises a series of transistors with a common collector zone, each emitter electrode being connected to the succeeding base electrode, and the lengths of the emitter junction perimeters are such that the maximum current gain of the combination occurs at a greater emitter amount than the corresponding maximum for the last transistor. The arrangement enables a given current gain to be obtained with a smaller structure. Fig. 5A shows a structure suitable for a Darlington pair comprising two transistors with emitter-base and base-collector junction 21 and 22 respectively. The emitter electrode of one transistor is connected to the base electrode of the other, and dimensions are given for the length of the emitter perimeters and size of base zones. The semi-conductor material may be silicon, the zones being produced by diffusion or epitaxial growth. To remove deep level impurities such as gold and iron, the material may be heated in a region which is damaged or lapped or covered with acidic oxide glass so that it acts as a getter.
GB4653464A 1965-12-22 1964-12-22 Semiconductor devices Expired GB1035727A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4653465 1965-12-22

Publications (1)

Publication Number Publication Date
GB1035727A true GB1035727A (en) 1966-07-13

Family

ID=10441627

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4653464A Expired GB1035727A (en) 1965-12-22 1964-12-22 Semiconductor devices

Country Status (1)

Country Link
GB (1) GB1035727A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2607194A1 (en) * 1975-02-28 1976-09-09 Philips Nv SEMI-CONDUCTOR ARRANGEMENT
US4827322A (en) * 1982-12-06 1989-05-02 Mitsubishi Benki Kabushiki Kaisha Power transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2607194A1 (en) * 1975-02-28 1976-09-09 Philips Nv SEMI-CONDUCTOR ARRANGEMENT
US4827322A (en) * 1982-12-06 1989-05-02 Mitsubishi Benki Kabushiki Kaisha Power transistor

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