GB1065741A - Improvements in or relating to semiconductor devices - Google Patents
Improvements in or relating to semiconductor devicesInfo
- Publication number
- GB1065741A GB1065741A GB237264A GB237264A GB1065741A GB 1065741 A GB1065741 A GB 1065741A GB 237264 A GB237264 A GB 237264A GB 237264 A GB237264 A GB 237264A GB 1065741 A GB1065741 A GB 1065741A
- Authority
- GB
- United Kingdom
- Prior art keywords
- relating
- semiconductor devices
- emitter
- base
- heading
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Abstract
1,065,741. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. Jan. 20, 1964, No. 2372/64. Heading H1K. The interdigitated emitter 17 and base 16 of a silicon planar epitaxial transistor have dimensions within 30% of those indicated, so that an emitter periphery 9 at least one inch long is accommodated within a collector-base junction 5 less than 0À005 square inch in area.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB237264A GB1065741A (en) | 1964-01-20 | 1964-01-20 | Improvements in or relating to semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB237264A GB1065741A (en) | 1964-01-20 | 1964-01-20 | Improvements in or relating to semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1065741A true GB1065741A (en) | 1967-04-19 |
Family
ID=9738386
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB237264A Expired GB1065741A (en) | 1964-01-20 | 1964-01-20 | Improvements in or relating to semiconductor devices |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1065741A (en) |
-
1964
- 1964-01-20 GB GB237264A patent/GB1065741A/en not_active Expired
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1026019A (en) | Improvements in or relating to semiconductor devices | |
GB1140822A (en) | Semi-conductor elements | |
MY6900238A (en) | Encapsulated pn junction semiconductor device | |
GB1046707A (en) | Improvements in or relating to storage circuits | |
GB1030050A (en) | Punchthrough breakdown rectifier | |
GB1106787A (en) | Improvements in semiconductor devices | |
GB1065741A (en) | Improvements in or relating to semiconductor devices | |
GB1053428A (en) | ||
GB1041501A (en) | Memory device | |
GB1228238A (en) | ||
ES384149A1 (en) | Semiconductor device | |
GB1335037A (en) | Field effect transistor | |
GB1334924A (en) | Circuits including monolithic transistor structures | |
GB1078273A (en) | Semiconductor device | |
GB1007936A (en) | Improvements in or relating to semiconductive devices | |
GB1035727A (en) | Semiconductor devices | |
GB958245A (en) | Semiconductor devices | |
FR1454806A (en) | Transistor | |
GB1072886A (en) | Varactor diode | |
GB936812A (en) | Improvements in or relating to transistors | |
CA665744A (en) | Semiconductor diode assembly and housing therefor | |
GB1206202A (en) | Junction transistors | |
SWIT | Measurement of diffusion length of minority carriers in the region of a semi-conductor wherein the carriers are generated(Measurement of diffusion length of excess minority carriers in semiconductors in region where carriers are generated) | |
GB1072937A (en) | Field effect assembly | |
FR1380350A (en) | Epitaxial semiconductor device |