GB1072886A - Varactor diode - Google Patents
Varactor diodeInfo
- Publication number
- GB1072886A GB1072886A GB19714/66A GB1971466A GB1072886A GB 1072886 A GB1072886 A GB 1072886A GB 19714/66 A GB19714/66 A GB 19714/66A GB 1971466 A GB1971466 A GB 1971466A GB 1072886 A GB1072886 A GB 1072886A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- varactor diode
- junction
- semi
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2233—Diffusion into or out of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
- Bipolar Transistors (AREA)
Abstract
1,072,886. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. May 4, 1966, No. 19714/66. Addition to 1,069,800. Heading H1K. A varactor diode includes a junction (5, Fig. 1) or a plurality of ohmically interconnected discrete junctions 14, as shown, Fig. 2, between a first region (4) or a plurality of first regions 13 of metal or semi-conductor material and a higher-resistivity second region 11 (or 2) on an insulating substrate 10 (or 1), the first region (4) or regions 13 being diffused into the second region so that the junction (5) or junctions 14 is or are slanted or stepped with respect to the interface 15 (or 6) between the . second region and the insulating substrate.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB19714/66A GB1072886A (en) | 1965-05-20 | 1966-05-04 | Varactor diode |
DE19671589684 DE1589684A1 (en) | 1965-05-20 | 1967-04-27 | Capacitance diode |
FR105000A FR92447E (en) | 1965-05-20 | 1967-05-03 | Variable capacitance diode |
NL6706379A NL6706379A (en) | 1966-05-04 | 1967-05-05 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB21344/65A GB1069800A (en) | 1965-05-20 | 1965-05-20 | Varactor diode |
GB19714/66A GB1072886A (en) | 1965-05-20 | 1966-05-04 | Varactor diode |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1072886A true GB1072886A (en) | 1967-06-21 |
Family
ID=33100016
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB19714/66A Expired GB1072886A (en) | 1965-05-20 | 1966-05-04 | Varactor diode |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE1589684A1 (en) |
FR (1) | FR92447E (en) |
GB (1) | GB1072886A (en) |
-
1966
- 1966-05-04 GB GB19714/66A patent/GB1072886A/en not_active Expired
-
1967
- 1967-04-27 DE DE19671589684 patent/DE1589684A1/en active Pending
- 1967-05-03 FR FR105000A patent/FR92447E/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR92447E (en) | 1968-11-08 |
DE1589684A1 (en) | 1970-07-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1524864A (en) | Monolithic semiconductor arrangements | |
GB1154892A (en) | Semiconductor Devices | |
GB1014735A (en) | Encapsulated pn junction semiconductor device | |
GB1140822A (en) | Semi-conductor elements | |
GB1130718A (en) | Improvements in or relating to the epitaxial deposition of a semiconductor material | |
GB1175049A (en) | Controllable tunnel diode | |
GB1046707A (en) | Improvements in or relating to storage circuits | |
GB1316819A (en) | With protection against voltage surges | |
GB1244926A (en) | Improvements in or relating to electrical control circuit arrangements | |
GB1140667A (en) | Electronic circuit | |
GB1125650A (en) | Insulating layers and devices incorporating such layers | |
GB1030050A (en) | Punchthrough breakdown rectifier | |
GB1072886A (en) | Varactor diode | |
ES308304A1 (en) | Improvements in semiconductor devices. (Machine-translation by Google Translate, not legally binding) | |
GB995727A (en) | Improvements in or relating to semiconductor devices | |
GB1088776A (en) | Semiconductor controlled rectifier having a shorted emitter | |
GB1106787A (en) | Improvements in semiconductor devices | |
GB1039915A (en) | Improvements in or relating to semiconductor devices | |
GB1287247A (en) | Improved semiconductor device with high junction breakdown voltage and method of manufacture | |
GB1228238A (en) | ||
GB1041501A (en) | Memory device | |
GB1098760A (en) | Method of making semiconductor device | |
ES384149A1 (en) | Semiconductor device | |
GB1021147A (en) | Divided base four-layer semiconductor device | |
GB1007936A (en) | Improvements in or relating to semiconductive devices |