ES308304A1 - Improvements in semiconductor devices. (Machine-translation by Google Translate, not legally binding) - Google Patents

Improvements in semiconductor devices. (Machine-translation by Google Translate, not legally binding)

Info

Publication number
ES308304A1
ES308304A1 ES0308304A ES308304A ES308304A1 ES 308304 A1 ES308304 A1 ES 308304A1 ES 0308304 A ES0308304 A ES 0308304A ES 308304 A ES308304 A ES 308304A ES 308304 A1 ES308304 A1 ES 308304A1
Authority
ES
Spain
Prior art keywords
type
translation
machine
semi
semiconductor devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0308304A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of ES308304A1 publication Critical patent/ES308304A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Die Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

"Perfections in semiconductor devices" endowed with characteristics of stabilized semiconductor surface, provided with a semi-conductive body with P-type and N-type areas that are coupled to form at least one prolonged PN connection to a surface thereof; an insulating passivation coating on the above-mentioned surface of the semi-conductive body covering the indicated connection, characterized in that a metallic layer is fixed to the surface of said insulating coating, in superposed relation with respect to an appreciable part of said union on said surface of the indicated semi-conductor body; said metal layer is prepared to deviate to a potential no greater than that of any of the P-type and N-type regions mentioned, when said PN junction deviates in the opposite direction. (Machine-translation by Google Translate, not legally binding)
ES0308304A 1964-02-04 1965-01-19 Improvements in semiconductor devices. (Machine-translation by Google Translate, not legally binding) Expired ES308304A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US34249564A 1964-02-04 1964-02-04

Publications (1)

Publication Number Publication Date
ES308304A1 true ES308304A1 (en) 1965-04-16

Family

ID=23342075

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0308304A Expired ES308304A1 (en) 1964-02-04 1965-01-19 Improvements in semiconductor devices. (Machine-translation by Google Translate, not legally binding)

Country Status (4)

Country Link
BE (1) BE656774A (en)
CH (1) CH456773A (en)
ES (1) ES308304A1 (en)
NL (1) NL6413894A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3463977A (en) * 1966-04-21 1969-08-26 Fairchild Camera Instr Co Optimized double-ring semiconductor device
US3423606A (en) * 1966-07-21 1969-01-21 Gen Instrument Corp Diode with sharp reverse-bias breakdown characteristic
US3432731A (en) * 1966-10-31 1969-03-11 Fairchild Camera Instr Co Planar high voltage four layer structures
DE3141203A1 (en) * 1981-10-16 1983-04-28 Siemens AG, 1000 Berlin und 8000 München PLANAR SEMICONDUCTOR COMPONENT
DE3201545A1 (en) * 1982-01-20 1983-07-28 Robert Bosch Gmbh, 7000 Stuttgart PLANAR SEMICONDUCTOR ARRANGEMENT
DE3227536A1 (en) * 1982-01-20 1983-07-28 Robert Bosch Gmbh, 7000 Stuttgart DARLINGTON TRANSISTOR CIRCUIT
WO1995004374A1 (en) * 1993-07-29 1995-02-09 Siemens Components, Inc. A reverse field plate, junction-terminating structure
US5750414A (en) * 1993-09-29 1998-05-12 Siemens Components, Inc. Method of fabricating a semiconductor device

Also Published As

Publication number Publication date
BE656774A (en) 1965-04-01
CH456773A (en) 1968-07-31
NL6413894A (en) 1965-08-05

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