GB876332A - Improvements in or relating to semi-conductor devices and methods of producing such devices - Google Patents

Improvements in or relating to semi-conductor devices and methods of producing such devices

Info

Publication number
GB876332A
GB876332A GB2934859A GB2934859A GB876332A GB 876332 A GB876332 A GB 876332A GB 2934859 A GB2934859 A GB 2934859A GB 2934859 A GB2934859 A GB 2934859A GB 876332 A GB876332 A GB 876332A
Authority
GB
United Kingdom
Prior art keywords
zone
type
base
emitter
cross
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2934859A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB876332A publication Critical patent/GB876332A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

876,332. Semi-conductor devices. SIEMENS & HALSKE A.G. Aug. 27, 1959 [Aug. 27, 1958], No. 29348/59. Class 37. In a PNIP or NPIN semi - conductor device, the cross-section of the collector zone is larger than that of the base zone and the cross-section of the intrinsic zone is larger in the vicinity of the collector then in the vicinity of the base zone shows a transistor in which the intrinsic zone 4 decreases uniformly in cross section from a p-type collector zone 5 to an n-type base zone 3 and in which the emitter zone 7 is p-type. This arrangement is said to lead to a reduced capacitance and leakage current. The zone 4 may be weakly doped with impurities which produce the same conductivity type as the base zone but the specific resistance of the zone and its thickness can be chosen so that for a given working voltage the collector space charge zone reaches just to the base zone 3. In further constructions (Figs. 3, 4 and 5, not shown), the cross-section of the intrinsic zone is reduced abruptly by a step, the base electrode is annular and surrounds the emitter and the base electrode is in the form of two rectangular strips, one on each side of an emitter strip. In production the emitter pellet may contain both closed and acceptor materials which diffuse at different rates gallium and arsenic and aluminium and antimony are suggested for a germanium or silicon disc. First the emitter is alloyed to the disc to form a p-type recrystallization zone. The surface around the emitter is then covered with n-type foil to form the base. The whole system is then subjected to a diffusion process so that a n-type layer is formed around the p-type recrystallization zone and the n-type impurities form the base zone. The base electrode may be attached during the diffusion process. The electrodes are then covered and the decrease in cross-section of area 4 (Fig. 1) produced by etching.
GB2934859A 1958-08-27 1959-08-27 Improvements in or relating to semi-conductor devices and methods of producing such devices Expired GB876332A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES59587A DE1094886B (en) 1958-08-27 1958-08-27 Semiconductor arrangement with collector electrode, especially transistor for high frequencies and high power dissipation

Publications (1)

Publication Number Publication Date
GB876332A true GB876332A (en) 1961-08-30

Family

ID=7493419

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2934859A Expired GB876332A (en) 1958-08-27 1959-08-27 Improvements in or relating to semi-conductor devices and methods of producing such devices

Country Status (5)

Country Link
CH (1) CH384720A (en)
DE (1) DE1094886B (en)
FR (1) FR1232180A (en)
GB (1) GB876332A (en)
NL (1) NL242556A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1281584B (en) * 1963-01-30 1968-10-31 Gen Electric Semiconductor component with a semiconductor body made of silicon or germanium with one or more diffused PN junctions
US3697829A (en) * 1968-12-30 1972-10-10 Gen Electric Semiconductor devices with improved voltage breakdown characteristics

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL280849A (en) * 1961-07-12 1900-01-01
JPS58170044A (en) * 1982-03-31 1983-10-06 Fujitsu Ltd Semiconductor element

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1036393B (en) * 1954-08-05 1958-08-14 Siemens Ag Process for the production of two p-n junctions in semiconductor bodies, e.g. B. area transistors
DE1035780B (en) * 1955-08-29 1958-08-07 Ibm Deutschland Transistor with intrinsic zone

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1281584B (en) * 1963-01-30 1968-10-31 Gen Electric Semiconductor component with a semiconductor body made of silicon or germanium with one or more diffused PN junctions
US3697829A (en) * 1968-12-30 1972-10-10 Gen Electric Semiconductor devices with improved voltage breakdown characteristics

Also Published As

Publication number Publication date
CH384720A (en) 1965-02-26
DE1094886B (en) 1960-12-15
NL242556A (en)
FR1232180A (en) 1960-10-06

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