FR1232180A - Transistor for high frequencies and high power dissipation - Google Patents
Transistor for high frequencies and high power dissipationInfo
- Publication number
- FR1232180A FR1232180A FR802552A FR802552A FR1232180A FR 1232180 A FR1232180 A FR 1232180A FR 802552 A FR802552 A FR 802552A FR 802552 A FR802552 A FR 802552A FR 1232180 A FR1232180 A FR 1232180A
- Authority
- FR
- France
- Prior art keywords
- transistor
- power dissipation
- frequencies
- high power
- high frequencies
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES59587A DE1094886B (en) | 1958-08-27 | 1958-08-27 | Semiconductor arrangement with collector electrode, especially transistor for high frequencies and high power dissipation |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1232180A true FR1232180A (en) | 1960-10-06 |
Family
ID=7493419
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR802552A Expired FR1232180A (en) | 1958-08-27 | 1959-08-11 | Transistor for high frequencies and high power dissipation |
Country Status (5)
Country | Link |
---|---|
CH (1) | CH384720A (en) |
DE (1) | DE1094886B (en) |
FR (1) | FR1232180A (en) |
GB (1) | GB876332A (en) |
NL (1) | NL242556A (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL280849A (en) * | 1961-07-12 | 1900-01-01 | ||
GB1052661A (en) * | 1963-01-30 | 1900-01-01 | ||
US3697829A (en) * | 1968-12-30 | 1972-10-10 | Gen Electric | Semiconductor devices with improved voltage breakdown characteristics |
JPS58170044A (en) * | 1982-03-31 | 1983-10-06 | Fujitsu Ltd | Semiconductor element |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1036393B (en) * | 1954-08-05 | 1958-08-14 | Siemens Ag | Process for the production of two p-n junctions in semiconductor bodies, e.g. B. area transistors |
DE1035780B (en) * | 1955-08-29 | 1958-08-07 | Ibm Deutschland | Transistor with intrinsic zone |
-
0
- NL NL242556D patent/NL242556A/xx unknown
-
1958
- 1958-08-27 DE DES59587A patent/DE1094886B/en active Pending
-
1959
- 1959-08-11 FR FR802552A patent/FR1232180A/en not_active Expired
- 1959-08-19 CH CH7712859A patent/CH384720A/en unknown
- 1959-08-27 GB GB2934859A patent/GB876332A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
NL242556A (en) | |
GB876332A (en) | 1961-08-30 |
CH384720A (en) | 1965-02-26 |
DE1094886B (en) | 1960-12-15 |
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