GB1207305A - Improvements in transistors - Google Patents
Improvements in transistorsInfo
- Publication number
- GB1207305A GB1207305A GB4753766A GB4753766A GB1207305A GB 1207305 A GB1207305 A GB 1207305A GB 4753766 A GB4753766 A GB 4753766A GB 4753766 A GB4753766 A GB 4753766A GB 1207305 A GB1207305 A GB 1207305A
- Authority
- GB
- United Kingdom
- Prior art keywords
- emitter
- electrode
- base
- region
- periphery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910001020 Au alloy Inorganic materials 0.000 abstract 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
Abstract
1,207,305. Semi-conductor devices. ASSOCIATED SEMICONDUCTOR MFRS. Ltd. 24 Oct., 1967 [24 Oct., 1966], No. 47537/66. Heading H1K. The periphery of the emitter electrode 16 of a planar transistor is uniformly spaced by at least 50Á from the insulation covered surfaceemergent portion 13 of the emitter/base junction, thus providing a uniform resistance path within the emitter region 11 between the periphery of the electrode 16 and the emitter/ base junction. The periphery of the base electrode 15 is closer to the junction portion 13 than that of the emitter electrode. The Si NPN device shown comprises an N+ Sbdoped substrate 1 carrying a phosphorusdoped epitaxial layer 2. Base and emitter regions 8, 11 are formed by diffusion of boron and phosphorus respectively. Al electrodes 15, 16 with thermocompression bonded Au leads such as 18 are provided, the substrate 1 being attached to a header by Au alloy for the collector connection. In another embodiment the emitter is annular, with the base region emerging at the surface both inside and outside the annulus and being provided with electrodes and leads at both sites. A third embodiment comprises a PNP Si planar transistor in which the emitter region (61, 62), Figs. 7, 8 (not shown), and its electrode (67, 68) are interdigitated with the base region (58) and its electrode (71, 72). In this case a P+ guard ring may be diffused into the collector region (52), and a "field relief" electrode may be provided on the insulating layer in the vicinity of the termination of the collector/ base junction.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB4753766A GB1207305A (en) | 1966-10-24 | 1966-10-24 | Improvements in transistors |
NL6714340A NL6714340A (en) | 1966-10-24 | 1967-10-21 | |
BE705524D BE705524A (en) | 1966-10-24 | 1967-10-23 | |
CH1477567A CH480734A (en) | 1966-10-24 | 1967-10-23 | transistor |
FR125570A FR1541622A (en) | 1966-10-24 | 1967-10-24 | Transistor |
DE19671614289 DE1614289A1 (en) | 1966-10-24 | 1967-10-24 | transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB4753766A GB1207305A (en) | 1966-10-24 | 1966-10-24 | Improvements in transistors |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1207305A true GB1207305A (en) | 1970-09-30 |
Family
ID=10445335
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4753766A Expired GB1207305A (en) | 1966-10-24 | 1966-10-24 | Improvements in transistors |
Country Status (5)
Country | Link |
---|---|
BE (1) | BE705524A (en) |
CH (1) | CH480734A (en) |
DE (1) | DE1614289A1 (en) |
GB (1) | GB1207305A (en) |
NL (1) | NL6714340A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE28952E (en) * | 1971-03-17 | 1976-08-31 | Rca Corporation | Shaped riser on substrate step for promoting metal film continuity |
GB2385463A (en) * | 2001-10-22 | 2003-08-20 | Asb Inc | Bipolar transistor |
-
1966
- 1966-10-24 GB GB4753766A patent/GB1207305A/en not_active Expired
-
1967
- 1967-10-21 NL NL6714340A patent/NL6714340A/xx unknown
- 1967-10-23 CH CH1477567A patent/CH480734A/en not_active IP Right Cessation
- 1967-10-23 BE BE705524D patent/BE705524A/xx unknown
- 1967-10-24 DE DE19671614289 patent/DE1614289A1/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE28952E (en) * | 1971-03-17 | 1976-08-31 | Rca Corporation | Shaped riser on substrate step for promoting metal film continuity |
GB2385463A (en) * | 2001-10-22 | 2003-08-20 | Asb Inc | Bipolar transistor |
Also Published As
Publication number | Publication date |
---|---|
CH480734A (en) | 1969-10-31 |
DE1614289A1 (en) | 1970-07-09 |
NL6714340A (en) | 1968-04-25 |
BE705524A (en) | 1968-04-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |