FR2144904A1 - - Google Patents

Info

Publication number
FR2144904A1
FR2144904A1 FR7224819*A FR7224819A FR2144904A1 FR 2144904 A1 FR2144904 A1 FR 2144904A1 FR 7224819 A FR7224819 A FR 7224819A FR 2144904 A1 FR2144904 A1 FR 2144904A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7224819*A
Other languages
French (fr)
Other versions
FR2144904B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2144904A1 publication Critical patent/FR2144904A1/fr
Application granted granted Critical
Publication of FR2144904B1 publication Critical patent/FR2144904B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
FR7224819*A 1971-07-06 1972-06-30 Expired FR2144904B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15990771A 1971-07-06 1971-07-06

Publications (2)

Publication Number Publication Date
FR2144904A1 true FR2144904A1 (en) 1973-02-16
FR2144904B1 FR2144904B1 (en) 1975-09-05

Family

ID=22574617

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7224819*A Expired FR2144904B1 (en) 1971-07-06 1972-06-30

Country Status (7)

Country Link
JP (1) JPS5145946B1 (en)
CA (1) CA961169A (en)
CH (1) CH548086A (en)
DE (1) DE2232756C2 (en)
ES (1) ES404185A1 (en)
FR (1) FR2144904B1 (en)
IT (1) IT956844B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0011686A1 (en) * 1978-09-29 1980-06-11 Siemens Aktiengesellschaft Highly integrated dynamic memory cell and its method of operation
EP0015675A1 (en) * 1979-02-22 1980-09-17 Fujitsu Limited Semiconductor memory device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3916394A (en) * 1974-12-09 1975-10-28 Honeywell Inf Systems High-speed random access memory
JPS59140811U (en) * 1983-03-12 1984-09-20 南　猛 concrete mixer

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1329220A (en) * 1969-08-11 1973-09-05 California Inst Of Techn Stored charge device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0011686A1 (en) * 1978-09-29 1980-06-11 Siemens Aktiengesellschaft Highly integrated dynamic memory cell and its method of operation
EP0015675A1 (en) * 1979-02-22 1980-09-17 Fujitsu Limited Semiconductor memory device

Also Published As

Publication number Publication date
CH548086A (en) 1974-04-11
DE2232756C2 (en) 1984-02-23
JPS5145946B1 (en) 1976-12-06
CA961169A (en) 1975-01-14
FR2144904B1 (en) 1975-09-05
DE2232756A1 (en) 1973-01-18
IT956844B (en) 1973-10-10
ES404185A1 (en) 1975-06-01

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Legal Events

Date Code Title Description
ST Notification of lapse