JPS5750464A - Semiconductor memory device and manufacture thereof - Google Patents
Semiconductor memory device and manufacture thereofInfo
- Publication number
- JPS5750464A JPS5750464A JP55126226A JP12622680A JPS5750464A JP S5750464 A JPS5750464 A JP S5750464A JP 55126226 A JP55126226 A JP 55126226A JP 12622680 A JP12622680 A JP 12622680A JP S5750464 A JPS5750464 A JP S5750464A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- capacitor
- memory device
- charge
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000003990 capacitor Substances 0.000 abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To obtain a 1-transistor memory device with a high yield, by effectively using the area of a storage capacitance in a memory cell so that the coupling capacitance of the 1-transistor memory device is made larger, making the device higher in the resistance against the outside noise, and using a self-alignment technique. CONSTITUTION:A gate electrode 7 is vertically sandwiched by at least a part of a gate electrode 11 laminated through a polycrystalline silicon oxide film 8 on a polycrystalline silicon gate 7 of a capacitor portion and a part of a charge-discharge path of the capacitor through the insulator film 8. The electrode facing to the capacitor gate electrode 7 is formed from an N type region 6 of the opposite conductivity type to that of a substrate and constituted to that the ends of the gate electrode 11 and the N type region 6 approximately meet each other at a part of the charge-discharge path of the capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55126226A JPS5750464A (en) | 1980-09-11 | 1980-09-11 | Semiconductor memory device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55126226A JPS5750464A (en) | 1980-09-11 | 1980-09-11 | Semiconductor memory device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5750464A true JPS5750464A (en) | 1982-03-24 |
Family
ID=14929874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55126226A Pending JPS5750464A (en) | 1980-09-11 | 1980-09-11 | Semiconductor memory device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5750464A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6034160A (en) * | 1983-08-05 | 1985-02-21 | Nippon Saitetsuku Kk | Preparation of preservable food |
-
1980
- 1980-09-11 JP JP55126226A patent/JPS5750464A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6034160A (en) * | 1983-08-05 | 1985-02-21 | Nippon Saitetsuku Kk | Preparation of preservable food |
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