JPS5343485A - Semiconductor memory cell - Google Patents

Semiconductor memory cell

Info

Publication number
JPS5343485A
JPS5343485A JP11715476A JP11715476A JPS5343485A JP S5343485 A JPS5343485 A JP S5343485A JP 11715476 A JP11715476 A JP 11715476A JP 11715476 A JP11715476 A JP 11715476A JP S5343485 A JPS5343485 A JP S5343485A
Authority
JP
Japan
Prior art keywords
memory cell
semiconductor memory
load resistance
collectors
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11715476A
Other languages
Japanese (ja)
Other versions
JPS6058593B2 (en
Inventor
Noriyuki Honma
Kunihiko Yamaguchi
Teruo Isobe
Goro Kitsukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP51117154A priority Critical patent/JPS6058593B2/en
Publication of JPS5343485A publication Critical patent/JPS5343485A/en
Publication of JPS6058593B2 publication Critical patent/JPS6058593B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To speed the response of base potential even when load resistance is high and reduce the increase in access time by inserting a capacitor in parallel with the load resistance connected to the collectors of two transistors.
JP51117154A 1976-10-01 1976-10-01 semiconductor memory Expired JPS6058593B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51117154A JPS6058593B2 (en) 1976-10-01 1976-10-01 semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51117154A JPS6058593B2 (en) 1976-10-01 1976-10-01 semiconductor memory

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP60082350A Division JPS60258954A (en) 1985-04-19 1985-04-19 Semiconductor memory cell

Publications (2)

Publication Number Publication Date
JPS5343485A true JPS5343485A (en) 1978-04-19
JPS6058593B2 JPS6058593B2 (en) 1985-12-20

Family

ID=14704783

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51117154A Expired JPS6058593B2 (en) 1976-10-01 1976-10-01 semiconductor memory

Country Status (1)

Country Link
JP (1) JPS6058593B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55156363A (en) * 1979-05-25 1980-12-05 Hitachi Ltd Semiconductor memory device
EP0029717A1 (en) * 1979-11-22 1981-06-03 Fujitsu Limited Bipolar type static memory cell
JPS5863163A (en) * 1981-10-12 1983-04-14 Nec Corp Semiconductor device
JPS60143496A (en) * 1983-12-29 1985-07-29 Fujitsu Ltd Semiconductor storage device
US4636833A (en) * 1983-03-18 1987-01-13 Hitachi, Ltd. Semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55156363A (en) * 1979-05-25 1980-12-05 Hitachi Ltd Semiconductor memory device
JPS6262066B2 (en) * 1979-05-25 1987-12-24 Hitachi Ltd
EP0029717A1 (en) * 1979-11-22 1981-06-03 Fujitsu Limited Bipolar type static memory cell
JPS5863163A (en) * 1981-10-12 1983-04-14 Nec Corp Semiconductor device
US4636833A (en) * 1983-03-18 1987-01-13 Hitachi, Ltd. Semiconductor device
JPS60143496A (en) * 1983-12-29 1985-07-29 Fujitsu Ltd Semiconductor storage device
JPH041958B2 (en) * 1983-12-29 1992-01-14 Fujitsu Ltd

Also Published As

Publication number Publication date
JPS6058593B2 (en) 1985-12-20

Similar Documents

Publication Publication Date Title
JPS5331952A (en) Solid switch circuit
JPS5343485A (en) Semiconductor memory cell
JPS5314525A (en) Memory circuit
JPS5427734A (en) Dynamic semiconductor memory
KR850000778A (en) Foam Semiconductor Dopant Carrier and Manufacturing Method Thereof
JPS52141590A (en) Semiconductor memory cell
JPS5397343A (en) Semiconductor memory cell
JPS5525807A (en) Memory device
JPS52110530A (en) Mos random access memory
JPS5484934A (en) Semiconductor memory device
JPS5278389A (en) Semiconductor memory device
JPS55125662A (en) Semiconductor integrated circuit
JPS5291622A (en) Static memory cell
JPS56111185A (en) Semiconductor integrated memory cell
JPS52119131A (en) Mos dynamic memory
JPS51147271A (en) Semiconductor memory device
JPS5313468A (en) Timepiece with additional mechanism
JPS5345943A (en) Semiconductor memory unit
JPS52142469A (en) Semiconductor circuit
JPS5375829A (en) Semiconductor memory cell
JPS54102840A (en) Sense amplifier
JPS54140842A (en) Flip-flop circuit
FR2378331A1 (en) Large-scale integrated memory unit - has large number of memory cells each comprising transistor and capacitor
JPS52144238A (en) Semiconductor memory circuit
JPS5517871A (en) Semiconductor memory device