JPS5491083A - Integrated-circuit device - Google Patents

Integrated-circuit device

Info

Publication number
JPS5491083A
JPS5491083A JP15794577A JP15794577A JPS5491083A JP S5491083 A JPS5491083 A JP S5491083A JP 15794577 A JP15794577 A JP 15794577A JP 15794577 A JP15794577 A JP 15794577A JP S5491083 A JPS5491083 A JP S5491083A
Authority
JP
Japan
Prior art keywords
electrode
poly
covered
transistor
matching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15794577A
Other languages
Japanese (ja)
Inventor
Osamu Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15794577A priority Critical patent/JPS5491083A/en
Publication of JPS5491083A publication Critical patent/JPS5491083A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To fulfill the reduction of occupied area and the enlargement of storage capacity by overlapping or matching each other formation regions for a switching transistor and for information storing capacity making use of the multilayer electrode structure. CONSTITUTION:The passivation region of P-type Si substrate 101 is covered with thick oxidized film 102, and digit line 104 of poly-Si via N-type layer 105 and capacitor electrode 109 of poly-Si via N-type layer 108 are connected to the source and drain of the switching transistor respectively. Word line 107 of poly-Si is formed on gate oxidized film 106. The transistor formation region is covered with Si3N4 film 110 and electrode 109 is also formed by self-matching. Further, the entire cell part is covered with Al electrode 111 and electrode 111 is held at a constant potential. In this way, the area occupied by one transistor RAM cell can be reduced and the storage capacity can also be enlarged.
JP15794577A 1977-12-28 1977-12-28 Integrated-circuit device Pending JPS5491083A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15794577A JPS5491083A (en) 1977-12-28 1977-12-28 Integrated-circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15794577A JPS5491083A (en) 1977-12-28 1977-12-28 Integrated-circuit device

Publications (1)

Publication Number Publication Date
JPS5491083A true JPS5491083A (en) 1979-07-19

Family

ID=15660897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15794577A Pending JPS5491083A (en) 1977-12-28 1977-12-28 Integrated-circuit device

Country Status (1)

Country Link
JP (1) JPS5491083A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59125652A (en) * 1982-12-20 1984-07-20 Fujitsu Ltd Semiconductor memory device
JPS59231851A (en) * 1983-06-14 1984-12-26 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory cell
JPS60149160A (en) * 1983-07-11 1985-08-06 ナシヨナル・セミコンダクタ−・コ−ポレ−シヨン High efficiency dynamic random access memory and method of producing same
JPH08288475A (en) * 1996-05-20 1996-11-01 Hitachi Ltd Manufacture of semiconductor memory
JPH09107085A (en) * 1996-09-17 1997-04-22 Hitachi Ltd Semiconductor memory

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59125652A (en) * 1982-12-20 1984-07-20 Fujitsu Ltd Semiconductor memory device
JPS602784B2 (en) * 1982-12-20 1985-01-23 富士通株式会社 semiconductor storage device
JPS59231851A (en) * 1983-06-14 1984-12-26 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory cell
JPS60149160A (en) * 1983-07-11 1985-08-06 ナシヨナル・セミコンダクタ−・コ−ポレ−シヨン High efficiency dynamic random access memory and method of producing same
JPH08288475A (en) * 1996-05-20 1996-11-01 Hitachi Ltd Manufacture of semiconductor memory
JPH09107085A (en) * 1996-09-17 1997-04-22 Hitachi Ltd Semiconductor memory

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