JPS60137454U - signal readout device - Google Patents
signal readout deviceInfo
- Publication number
- JPS60137454U JPS60137454U JP2486484U JP2486484U JPS60137454U JP S60137454 U JPS60137454 U JP S60137454U JP 2486484 U JP2486484 U JP 2486484U JP 2486484 U JP2486484 U JP 2486484U JP S60137454 U JPS60137454 U JP S60137454U
- Authority
- JP
- Japan
- Prior art keywords
- type semiconductor
- conductivity type
- readout device
- signal readout
- semiconductor regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図乃至第３図は背景技術を説明するためのもので、
第１図Ａ〜Ｃは従来の信号読み出し装置の製造プロセス
を工程順に示す断面図、第２図Ａは従来の信号読み出し
装置の断面図、Ｂはその信号読み出し装置のポテンシャ
ルプロフィールを示す図、第３図はゲート電極が加えら
れる信号とフローティングディフュージョン領域のレベ
ル変化とを示すタイムチャート、第４図は本考案信号読
み出し装置の実施の一例を示すもので、同図Ａは断面図
、同図Ｂは横方向のポテンシャルプロフィールを示す図
、第５図は本考案信号読み出し装置の他の実施例を示す
断面図である。
符号の説明、１，１１・・・第１導電型半導体、３．４
・・・第２導電型半導体領域、９，１４・・・ゲート電
極。Figures 1 to 3 are for explaining the background technology.
1A to 1C are cross-sectional views showing the manufacturing process of a conventional signal readout device in order of process, FIG. 2A is a sectional view of a conventional signal readout device, B is a diagram showing the potential profile of the signal readout device, and FIG. Fig. 3 is a time chart showing the signal applied to the gate electrode and the level change of the floating diffusion region, and Fig. 4 shows an example of the implementation of the signal readout device of the present invention. 5 is a diagram showing a lateral potential profile, and FIG. 5 is a sectional view showing another embodiment of the signal reading device of the present invention. Explanation of symbols, 1, 11...first conductivity type semiconductor, 3.4
. . . second conductivity type semiconductor region, 9, 14 . . . gate electrode.
Claims (1)
電型半導体領域が形成され、該一対の半導体領域の間の
部分上にゲート絶縁膜を介してゲート電極が半導体表面
側から見た位置が少なくとも一方の第２導電型半導体領
域とは重なり合わないように形成され、上記第１導電型
半導体表面の少なくとも上記一方の第２導電型半導体領
域とゲート電極下との間の部分がその第２導電型半導体
領域と同じ導電型で且つそれよりも不純物濃度が低くさ
れてなることを特徴とする信号読み出し装置。A pair of second conductivity type semiconductor regions are formed on the surface of the first conductivity type semiconductor at a distance from each other, and a gate electrode is provided on a portion between the pair of semiconductor regions with a gate insulating film interposed therebetween, as viewed from the semiconductor surface side. The portion of the first conductive type semiconductor surface between at least one of the second conductive type semiconductor regions and the bottom of the gate electrode is formed so as not to overlap with at least one of the second conductive type semiconductor regions. 1. A signal readout device comprising a semiconductor region of the same conductivity type as a second conductivity type semiconductor region and having an impurity concentration lower than that of the second conductivity type semiconductor region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2486484U JPS60137454U (en) | 1984-02-23 | 1984-02-23 | signal readout device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2486484U JPS60137454U (en) | 1984-02-23 | 1984-02-23 | signal readout device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60137454U true JPS60137454U (en) | 1985-09-11 |
Family
ID=30519416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2486484U Pending JPS60137454U (en) | 1984-02-23 | 1984-02-23 | signal readout device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60137454U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02137235A (en) * | 1988-11-17 | 1990-05-25 | Sanyo Electric Co Ltd | Charge transfer element and manufacture thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56100476A (en) * | 1980-01-16 | 1981-08-12 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS5758358A (en) * | 1980-09-25 | 1982-04-08 | Toshiba Corp | Charge transfer device |
-
1984
- 1984-02-23 JP JP2486484U patent/JPS60137454U/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56100476A (en) * | 1980-01-16 | 1981-08-12 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS5758358A (en) * | 1980-09-25 | 1982-04-08 | Toshiba Corp | Charge transfer device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02137235A (en) * | 1988-11-17 | 1990-05-25 | Sanyo Electric Co Ltd | Charge transfer element and manufacture thereof |
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