JPS5869943U - semiconductor storage device - Google Patents
semiconductor storage deviceInfo
- Publication number
- JPS5869943U JPS5869943U JP16491081U JP16491081U JPS5869943U JP S5869943 U JPS5869943 U JP S5869943U JP 16491081 U JP16491081 U JP 16491081U JP 16491081 U JP16491081 U JP 16491081U JP S5869943 U JPS5869943 U JP S5869943U
- Authority
- JP
- Japan
- Prior art keywords
- sense amplifier
- storage device
- semiconductor storage
- conductivity type
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図はソフトエラーの要因を分析した結果を示す図、
第２図はセンス系回路部の略回路図、第３′図は現状の
センス系回路部の平面パターン図、第４図は本考案のセ
ンス系回路部の平面パターン図、第５図は本考案の実施
例の作成工程を示す断面図である。
５８・・・・・・ｎ＋拡散層（センスアンプ入力部）、
−５４・・・・・・モリブデンシリサイド層、６０・・
・・・・Ａ１層（ビット線）。Figure 1 shows the results of analyzing the causes of soft errors.
Fig. 2 is a schematic circuit diagram of the sense system circuit section, Fig. 3' is a plan pattern diagram of the current sense system circuit section, Fig. 4 is a plan pattern diagram of the sense system circuit section of the present invention, and Fig. 5 is the present invention. It is a sectional view showing a production process of an example of the invention. 58...n+ diffusion layer (sense amplifier input section),
-54... Molybdenum silicide layer, 60...
...A1 layer (bit line).
Claims (1)
センスアンプ、及びメモリセルからセンスアンプへ信号
を伝送するための金属線を有し、前記センスアンプの入
力端子である第二導電型の高不純物濃度領域と前記金属
線の両者に電気的に接続し、これによって両者の電気的
接触を可能とするような金属シリサイド層を有すること
を特徴とする半導体記憶装置。At least a sense amplifier formed on the surface of a first conductivity type semiconductor substrate, and a metal line for transmitting a signal from the memory cell to the sense amplifier, and a second conductivity type semiconductor substrate that is an input terminal of the sense amplifier. 1. A semiconductor memory device comprising a metal silicide layer that is electrically connected to both the impurity concentration region and the metal line, thereby enabling electrical contact between the two.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16491081U JPS5869943U (en) | 1981-11-06 | 1981-11-06 | semiconductor storage device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16491081U JPS5869943U (en) | 1981-11-06 | 1981-11-06 | semiconductor storage device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5869943U true JPS5869943U (en) | 1983-05-12 |
Family
ID=29957131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16491081U Pending JPS5869943U (en) | 1981-11-06 | 1981-11-06 | semiconductor storage device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5869943U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62140457A (en) * | 1985-12-16 | 1987-06-24 | Toshiba Corp | Semiconductor device |
-
1981
- 1981-11-06 JP JP16491081U patent/JPS5869943U/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62140457A (en) * | 1985-12-16 | 1987-06-24 | Toshiba Corp | Semiconductor device |
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