JPS5365675A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5365675A
JPS5365675A JP14167876A JP14167876A JPS5365675A JP S5365675 A JPS5365675 A JP S5365675A JP 14167876 A JP14167876 A JP 14167876A JP 14167876 A JP14167876 A JP 14167876A JP S5365675 A JPS5365675 A JP S5365675A
Authority
JP
Japan
Prior art keywords
epitaxial layer
region
emitter
semiconductor device
pnp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14167876A
Other languages
Japanese (ja)
Other versions
JPS6156625B2 (en
Inventor
Masayuki Kurozumi
Haruki Horikiri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14167876A priority Critical patent/JPS5365675A/en
Publication of JPS5365675A publication Critical patent/JPS5365675A/en
Publication of JPS6156625B2 publication Critical patent/JPS6156625B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To give an excellent collector-emitter reverse voltage resistance and the gain band width product to both PNP and NPN transistors, by providing a region featuring a higher impurity density than the epitaxial layer around the emitter region in the base region composed of the epitaxial layer.
JP14167876A 1976-11-24 1976-11-24 Semiconductor device Granted JPS5365675A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14167876A JPS5365675A (en) 1976-11-24 1976-11-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14167876A JPS5365675A (en) 1976-11-24 1976-11-24 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5365675A true JPS5365675A (en) 1978-06-12
JPS6156625B2 JPS6156625B2 (en) 1986-12-03

Family

ID=15297647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14167876A Granted JPS5365675A (en) 1976-11-24 1976-11-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5365675A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5887866A (en) * 1981-11-20 1983-05-25 Hitachi Ltd Semiconductor device
JPS59211270A (en) * 1983-05-17 1984-11-30 Sanyo Electric Co Ltd Vertical p-n-p type transistor
JPS60160558U (en) * 1984-04-04 1985-10-25 三洋電機株式会社 substrate type transistor
US4724221A (en) * 1981-10-28 1988-02-09 U.S. Philips Corporation High-speed, low-power-dissipation integrated circuits
EP0347550A2 (en) * 1988-06-21 1989-12-27 Texas Instruments Incorporated Process for fabricating isolated vertical and super beta bipolar transistors

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02117512U (en) * 1989-03-08 1990-09-20
US5126878A (en) * 1989-06-08 1992-06-30 Trumbull Donald E Portable stereoscopic viewing apparatus
JPH0358614U (en) * 1989-10-13 1991-06-07

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4724221A (en) * 1981-10-28 1988-02-09 U.S. Philips Corporation High-speed, low-power-dissipation integrated circuits
JPS5887866A (en) * 1981-11-20 1983-05-25 Hitachi Ltd Semiconductor device
JPS59211270A (en) * 1983-05-17 1984-11-30 Sanyo Electric Co Ltd Vertical p-n-p type transistor
JPS60160558U (en) * 1984-04-04 1985-10-25 三洋電機株式会社 substrate type transistor
EP0347550A2 (en) * 1988-06-21 1989-12-27 Texas Instruments Incorporated Process for fabricating isolated vertical and super beta bipolar transistors
EP0347550A3 (en) * 1988-06-21 1991-08-28 Texas Instruments Incorporated Process for fabricating isolated vertical and super beta bipolar transistors

Also Published As

Publication number Publication date
JPS6156625B2 (en) 1986-12-03

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