JPS56155545A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56155545A JPS56155545A JP5914480A JP5914480A JPS56155545A JP S56155545 A JPS56155545 A JP S56155545A JP 5914480 A JP5914480 A JP 5914480A JP 5914480 A JP5914480 A JP 5914480A JP S56155545 A JPS56155545 A JP S56155545A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- base
- collector
- emitter
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
Abstract
PURPOSE:To prevent the stoppage of operation of subject device under high collector voltage by a method wherein a high concentration buried layer is arranged on the collector region surrounding an emitter region at the place directly below the section facing the outer base lead-out layer. CONSTITUTION:An epitaxial layer 3 on a P type Si substrate is separated into a frame-shaped by a P layer 2. An N<+> base electrode lead-out layer 3b is formed on the base layer 3 facing an emitter layer 5 outside P emitter layers 4 and 5 surrounding P collector layers 4 partially overlapping the separated region 3 with the P layer 2. However, an N<+> buried layer 10 is provided at the bottom section of the N base layer 3 located directly below the layer 4 facing the layer 3b. According to this constitution, a depletion layer does not spread out from the P type substrate 1 by the presence of the N buried layer, the pinch-off voltage of parasitic FET becomes much higher than the bias voltage between the base and collector in practically use for the element and the base electrode 3a and an emitter electrode 5a will not be disconnected. Through these procedures, the device without stoppage of operation can be obtained even when it is operated at a high collector voltage at a high collector voltage at a high gain.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5914480A JPS56155545A (en) | 1980-05-02 | 1980-05-02 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5914480A JPS56155545A (en) | 1980-05-02 | 1980-05-02 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56155545A true JPS56155545A (en) | 1981-12-01 |
JPS6344305B2 JPS6344305B2 (en) | 1988-09-05 |
Family
ID=13104836
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5914480A Granted JPS56155545A (en) | 1980-05-02 | 1980-05-02 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56155545A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5947762A (en) * | 1982-09-10 | 1984-03-17 | Nec Corp | Semiconductor device |
JPS60142563A (en) * | 1983-12-29 | 1985-07-27 | New Japan Radio Co Ltd | Semiconductor device |
JPS60142562A (en) * | 1983-12-29 | 1985-07-27 | New Japan Radio Co Ltd | Semiconductor device |
JP2006303725A (en) * | 2005-04-18 | 2006-11-02 | Audio Technica Corp | Capacitor microphone |
JP2007300598A (en) * | 2006-04-07 | 2007-11-15 | Audio Technica Corp | Connector of microphone and its shielding method |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS507423A (en) * | 1973-05-18 | 1975-01-25 | ||
JPS5172286A (en) * | 1974-12-20 | 1976-06-22 | Fujitsu Ltd | HANDOTA ISOCHI |
JPS51140490A (en) * | 1975-05-30 | 1976-12-03 | Hitachi Ltd | Lateral transistor |
JPS53107279A (en) * | 1977-03-01 | 1978-09-19 | Sony Corp | Semiconductor device |
-
1980
- 1980-05-02 JP JP5914480A patent/JPS56155545A/en active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS507423A (en) * | 1973-05-18 | 1975-01-25 | ||
JPS5172286A (en) * | 1974-12-20 | 1976-06-22 | Fujitsu Ltd | HANDOTA ISOCHI |
JPS51140490A (en) * | 1975-05-30 | 1976-12-03 | Hitachi Ltd | Lateral transistor |
JPS53107279A (en) * | 1977-03-01 | 1978-09-19 | Sony Corp | Semiconductor device |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5947762A (en) * | 1982-09-10 | 1984-03-17 | Nec Corp | Semiconductor device |
JPH0239863B2 (en) * | 1982-09-10 | 1990-09-07 | Nippon Electric Co | |
JPS60142563A (en) * | 1983-12-29 | 1985-07-27 | New Japan Radio Co Ltd | Semiconductor device |
JPS60142562A (en) * | 1983-12-29 | 1985-07-27 | New Japan Radio Co Ltd | Semiconductor device |
JP2006303725A (en) * | 2005-04-18 | 2006-11-02 | Audio Technica Corp | Capacitor microphone |
US7787644B2 (en) | 2005-04-18 | 2010-08-31 | Kabushiki Kaisha Audio-Technica | Condenser microphone |
JP2007300598A (en) * | 2006-04-07 | 2007-11-15 | Audio Technica Corp | Connector of microphone and its shielding method |
Also Published As
Publication number | Publication date |
---|---|
JPS6344305B2 (en) | 1988-09-05 |
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