JPS56155546A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56155546A JPS56155546A JP5914580A JP5914580A JPS56155546A JP S56155546 A JPS56155546 A JP S56155546A JP 5914580 A JP5914580 A JP 5914580A JP 5914580 A JP5914580 A JP 5914580A JP S56155546 A JPS56155546 A JP S56155546A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- emitter
- collector
- base electrode
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To prevent the stoppage of operation of subject device under high collector voltage by a method wherein a gap is provided on the collector region surrounding an emitter layer at the place located between a base electrode lead-out layer and the emitter layer. CONSTITUTION:The N epitaxial layer 3 on a P type Si substrate is isolated by P layer 2 in a frame shape. On the isolated region 3, a P collector layer 4 which is partly overlapping on the P layer 2, P emitter layer 5 surrounded by the layer 4, and an N<+> base electrode lead out layer 6 which is provided in the epitaxial base 3 facing the emitter layer 5 on the outer side of the collector layer are formed. However, on the collector 4 surrounding the emitter 5, a gap 15 is provided between the base electrode lead-out layer 6 and the emitter 5. According to this constitution, depletion layers 7 and 8 leave a tunnel-shape channel by the aid of the gap 15 even at the high voltage VCB existed between collector and base, they do not pinch off at the practically used VCB and an emitter electrode 5a and a base electrode 6a are not disconnected.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5914580A JPS56155546A (en) | 1980-05-02 | 1980-05-02 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5914580A JPS56155546A (en) | 1980-05-02 | 1980-05-02 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56155546A true JPS56155546A (en) | 1981-12-01 |
JPS6344306B2 JPS6344306B2 (en) | 1988-09-05 |
Family
ID=13104867
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5914580A Granted JPS56155546A (en) | 1980-05-02 | 1980-05-02 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56155546A (en) |
-
1980
- 1980-05-02 JP JP5914580A patent/JPS56155546A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6344306B2 (en) | 1988-09-05 |
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