JPS56155546A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56155546A
JPS56155546A JP5914580A JP5914580A JPS56155546A JP S56155546 A JPS56155546 A JP S56155546A JP 5914580 A JP5914580 A JP 5914580A JP 5914580 A JP5914580 A JP 5914580A JP S56155546 A JPS56155546 A JP S56155546A
Authority
JP
Japan
Prior art keywords
layer
emitter
collector
base electrode
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5914580A
Other languages
Japanese (ja)
Other versions
JPS6344306B2 (en
Inventor
Yutaka Tomita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5914580A priority Critical patent/JPS56155546A/en
Publication of JPS56155546A publication Critical patent/JPS56155546A/en
Publication of JPS6344306B2 publication Critical patent/JPS6344306B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent the stoppage of operation of subject device under high collector voltage by a method wherein a gap is provided on the collector region surrounding an emitter layer at the place located between a base electrode lead-out layer and the emitter layer. CONSTITUTION:The N epitaxial layer 3 on a P type Si substrate is isolated by P layer 2 in a frame shape. On the isolated region 3, a P collector layer 4 which is partly overlapping on the P layer 2, P emitter layer 5 surrounded by the layer 4, and an N<+> base electrode lead out layer 6 which is provided in the epitaxial base 3 facing the emitter layer 5 on the outer side of the collector layer are formed. However, on the collector 4 surrounding the emitter 5, a gap 15 is provided between the base electrode lead-out layer 6 and the emitter 5. According to this constitution, depletion layers 7 and 8 leave a tunnel-shape channel by the aid of the gap 15 even at the high voltage VCB existed between collector and base, they do not pinch off at the practically used VCB and an emitter electrode 5a and a base electrode 6a are not disconnected.
JP5914580A 1980-05-02 1980-05-02 Semiconductor device Granted JPS56155546A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5914580A JPS56155546A (en) 1980-05-02 1980-05-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5914580A JPS56155546A (en) 1980-05-02 1980-05-02 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56155546A true JPS56155546A (en) 1981-12-01
JPS6344306B2 JPS6344306B2 (en) 1988-09-05

Family

ID=13104867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5914580A Granted JPS56155546A (en) 1980-05-02 1980-05-02 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56155546A (en)

Also Published As

Publication number Publication date
JPS6344306B2 (en) 1988-09-05

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