JPS5760872A - Vertical-type semiconductor device - Google Patents
Vertical-type semiconductor deviceInfo
- Publication number
- JPS5760872A JPS5760872A JP55137109A JP13710980A JPS5760872A JP S5760872 A JPS5760872 A JP S5760872A JP 55137109 A JP55137109 A JP 55137109A JP 13710980 A JP13710980 A JP 13710980A JP S5760872 A JPS5760872 A JP S5760872A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- introduction
- silicon layer
- amplification factor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 2
- 230000003321 amplification Effects 0.000 abstract 2
- 238000002347 injection Methods 0.000 abstract 2
- 239000007924 injection Substances 0.000 abstract 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XUKUURHRXDUEBC-SXOMAYOGSA-N (3s,5r)-7-[2-(4-fluorophenyl)-3-phenyl-4-(phenylcarbamoyl)-5-propan-2-ylpyrrol-1-yl]-3,5-dihydroxyheptanoic acid Chemical compound C=1C=CC=CC=1C1=C(C=2C=CC(F)=CC=2)N(CC[C@@H](O)C[C@H](O)CC(O)=O)C(C(C)C)=C1C(=O)NC1=CC=CC=C1 XUKUURHRXDUEBC-SXOMAYOGSA-N 0.000 abstract 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 125000005842 heteroatom Chemical group 0.000 abstract 1
- 238000005036 potential barrier Methods 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Abstract
PURPOSE:To increase an emitter injection efficiency of a current amplification factor by providing a P type amorphous silicon layer including B and Ge on an N type layer of a P type silicon substrate. CONSTITUTION:An amorphous silicon layer 8 containing B and Ge is deposited on an N layer 3 of a P silicon substrate 1 by laying SiH4 in the atmosphere of B and Ge. The maximum concentration of P impurity B which can be included in the amorsphous silicon layer 8 is controlled by solid solubility, limit depends on an amount of distortion created with introduction of other elements. This limit is loosened by introduction of Ge which has a larger ion radius than that of Si, and the maximum concentration of B is largely increased. Further, a hetero junction is formed between layers 3 and 4, so a potential barrier against electrons is higher than a barrier against positive holes. Therefore, an emitter injection efficiency or a current amplification factor is much more increased. Since Ge is inactive, the property of the layer 8 is not deteriorated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55137109A JPS5760872A (en) | 1980-09-30 | 1980-09-30 | Vertical-type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55137109A JPS5760872A (en) | 1980-09-30 | 1980-09-30 | Vertical-type semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5760872A true JPS5760872A (en) | 1982-04-13 |
| JPS6152582B2 JPS6152582B2 (en) | 1986-11-13 |
Family
ID=15191046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55137109A Granted JPS5760872A (en) | 1980-09-30 | 1980-09-30 | Vertical-type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5760872A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62279672A (en) * | 1986-05-28 | 1987-12-04 | Kanegafuchi Chem Ind Co Ltd | Semiconductor device |
| US5108936A (en) * | 1984-10-02 | 1992-04-28 | Interuniveritair Micro Elektronica Centrum | Method of producing a bipolar transistor having an amorphous emitter formed by plasma cvd |
-
1980
- 1980-09-30 JP JP55137109A patent/JPS5760872A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5108936A (en) * | 1984-10-02 | 1992-04-28 | Interuniveritair Micro Elektronica Centrum | Method of producing a bipolar transistor having an amorphous emitter formed by plasma cvd |
| JPS62279672A (en) * | 1986-05-28 | 1987-12-04 | Kanegafuchi Chem Ind Co Ltd | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6152582B2 (en) | 1986-11-13 |
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