JPS5534471A - Mis-type semiconductor device - Google Patents

Mis-type semiconductor device

Info

Publication number
JPS5534471A
JPS5534471A JP10751278A JP10751278A JPS5534471A JP S5534471 A JPS5534471 A JP S5534471A JP 10751278 A JP10751278 A JP 10751278A JP 10751278 A JP10751278 A JP 10751278A JP S5534471 A JPS5534471 A JP S5534471A
Authority
JP
Japan
Prior art keywords
drain
region
bonding pad
type
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10751278A
Other languages
Japanese (ja)
Inventor
Masatomo Furuumi
Manabu Matsuzawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10751278A priority Critical patent/JPS5534471A/en
Publication of JPS5534471A publication Critical patent/JPS5534471A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To reduce the defective rate of MIS-type semiconductor devices by equipping under a drain electrode bonding pad a second conduction-type region extending on a second conduction-type drain region.
CONSTITUTION: On an n-type semiconductor substrate 1 is provided a drain-well region 3 extending until a bonding pad region for drain electrodes and on the drain- well region is mounted a silicon oxide film 4 for field passivation served as a drain. Thereby conductive impurities of the same type as the drain are diffused on the surface of the semiconductor substrate 1 under the bonding pad region for the drain electrode 11, too and such structure is formed that the drain extends until the bonding pad regon. Though Leyden effect is caused just beneath the oxide film 4, the caused depth is under 5μ and stays within the drain region.
COPYRIGHT: (C)1980,JPO&Japio
JP10751278A 1978-09-04 1978-09-04 Mis-type semiconductor device Pending JPS5534471A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10751278A JPS5534471A (en) 1978-09-04 1978-09-04 Mis-type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10751278A JPS5534471A (en) 1978-09-04 1978-09-04 Mis-type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5534471A true JPS5534471A (en) 1980-03-11

Family

ID=14461073

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10751278A Pending JPS5534471A (en) 1978-09-04 1978-09-04 Mis-type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5534471A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5082267A (en) * 1973-11-27 1975-07-03
JPS5731864U (en) * 1980-07-28 1982-02-19

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4968664A (en) * 1972-11-06 1974-07-03

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4968664A (en) * 1972-11-06 1974-07-03

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5082267A (en) * 1973-11-27 1975-07-03
JPS5533866B2 (en) * 1973-11-27 1980-09-03
JPS5731864U (en) * 1980-07-28 1982-02-19

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