JPS57102070A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57102070A
JPS57102070A JP17849980A JP17849980A JPS57102070A JP S57102070 A JPS57102070 A JP S57102070A JP 17849980 A JP17849980 A JP 17849980A JP 17849980 A JP17849980 A JP 17849980A JP S57102070 A JPS57102070 A JP S57102070A
Authority
JP
Japan
Prior art keywords
wiring
semiconductor
polysilicon layer
wiring metal
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17849980A
Other languages
Japanese (ja)
Inventor
Masanori Sakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP17849980A priority Critical patent/JPS57102070A/en
Publication of JPS57102070A publication Critical patent/JPS57102070A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To prevent the intrusion of a wiring metal into an impurity region of a semiconductor through annealing by connecting the wiring metal to a main surface of the semiconductor through a polysilicon layer containing impurities having the phosphorus concentration of 8×1020 number/cm3 or higher.
CONSTITUTION: The wiring metal such as Al wiring 7 is connected to the impurity region 3 of a semiconductor substrate 1 through the polysilicon layer 6 containing impurities having the phosphorus concentration of 8×1020 number/ cm3 or higher. Accordingly, a distance of which the Al wiring 7 intrudes into the polysilicon layer 6 can be inhibited to 0.1μ or lower during annealing for forming the ohmic contact of Al-polysilicon-silicon, and the semiconductor device having stable electrical characteristics can be manufactured whatever the Xj of the N type impurity resion 3 under the contact decreases.
COPYRIGHT: (C)1982,JPO&Japio
JP17849980A 1980-12-17 1980-12-17 Semiconductor device Pending JPS57102070A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17849980A JPS57102070A (en) 1980-12-17 1980-12-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17849980A JPS57102070A (en) 1980-12-17 1980-12-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57102070A true JPS57102070A (en) 1982-06-24

Family

ID=16049521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17849980A Pending JPS57102070A (en) 1980-12-17 1980-12-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57102070A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60169168A (en) * 1984-02-13 1985-09-02 Rohm Co Ltd Electrode structure of semiconductor element
JPS61222248A (en) * 1985-03-28 1986-10-02 Toshiba Corp Semiconductor device and manufacture thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4939389A (en) * 1972-08-14 1974-04-12
JPS511586A (en) * 1974-06-26 1976-01-08 Toyo Kogyo Co KARIUGOMUTOKINZOKUTONO SETSUCHAKUHOHO
JPS5294781A (en) * 1976-02-04 1977-08-09 Philips Nv Method of producing semiconductor device
JPS5685858A (en) * 1979-12-14 1981-07-13 Fujitsu Ltd Semiconductor device
JPS56169337A (en) * 1980-05-29 1981-12-26 Nec Home Electronics Ltd Manufacture of semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4939389A (en) * 1972-08-14 1974-04-12
JPS511586A (en) * 1974-06-26 1976-01-08 Toyo Kogyo Co KARIUGOMUTOKINZOKUTONO SETSUCHAKUHOHO
JPS5294781A (en) * 1976-02-04 1977-08-09 Philips Nv Method of producing semiconductor device
JPS5685858A (en) * 1979-12-14 1981-07-13 Fujitsu Ltd Semiconductor device
JPS56169337A (en) * 1980-05-29 1981-12-26 Nec Home Electronics Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60169168A (en) * 1984-02-13 1985-09-02 Rohm Co Ltd Electrode structure of semiconductor element
JPS61222248A (en) * 1985-03-28 1986-10-02 Toshiba Corp Semiconductor device and manufacture thereof

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