JPS58125864A - Manufacture of line sensor - Google Patents

Abstract

PURPOSE:To obtain a sufficiently high photocurrent and a sufficiently low dark current, and to enhance the S/N characteristic of the line sensor when the line sensor is to be formed by a method wherein an Al layer, etc., is used as the mask for etching of an amorphous Si layer, and after then the Al layer itself is used as the electrode material. CONSTITUTION:A shading layer 101 consisting of Cr, etc., is adhered on a glass substrate 1, an opening is provided in the prescribed region to make the substrate 1 at the part thereof to be exposed, a transparent insulating SiO2 layer 100 is adhered on the whole surface containing the opening part, the amorphous Si layer 201 is made to grow thereon, and the whole surface is covered with the Al layer 202. Then the first time patterning is performed to the Al layer 202 together with the Si layer at the sensor part, a common electrode part and respective individual signal electrode parts, plasma etching is performed to the Si layer in succession making the Al layer pattern as the mask, and Al electrode patterns 202a, 202b at the sensor body part are formed by the second time patterning. Accordingly, the line sensor enabled to detect precisely the informations of white and black on a manuscript can be obtained easily.

Description

DETAILED DESCRIPTION OF THE INVENTION This invention relates to a method for manufacturing a line sensor that can read information in close contact with a document.

Figure 1 shows the XF-internal factors of a conventional contact type image sensor and a line sensor obtained by the present invention, where l in @1- is a glass substrate, and 21 to 26 are made of aluminum or nichrome-gold, etc. It is a common electrode. In addition, 31 to 36 indicate the illumination windows partially removed from the common electric Ik21 to 261, and 41 to 64 (41.48 in η
, 56, 61, and 64) is an amorphous silicon layer deposited by glow discharge or sputtering, and is a senna body that utilizes a monoconductive property.

Furthermore, S71-94 (71.78, 86°91.
94 is numbered), the common electrodes 21 to 26 and the N- material, and the individual signal electrodes 61 formed by the same method.
1. Common turtle IIM21-2 for sensor bodies 41-64
6 and individual signal electrodes 71 to 94 have a comb shape.

As mentioned above, the conventional 0@Kansugi image sensor is configured, but in order to make #71 brightness easier, it is necessary to make it transparent. The I film and the m optical layer are omitted.

Further, No. 2- is a cross-sectional view taken along the line No. 1-OA-A', and shows a state in which the original is cut out. In FIG. 2, the same reference numerals are given to the first part and the fourth part, and the explanation thereof will be omitted.

High frequency sputtering or CVD to 100 shown in tR2-
Transparent insulation made of silicon dioxide'l-(5i(h)) formed by the method 1. Light shielding made of chromium, nichrome, etc.
It's a pigeon. Other details are the same as in Figure 181.

Also shown is the original document, which is in contact with the transparent image II 110. Further, 112 indicates illumination light, and 113
is the reflected light from the original 111.

Next, the operation will be explained. Light 1j1ftl 12 is lighted from glass substrate l @8 window 32. The reflected light 113 is transmitted through the transparent storage layer 110 and has an intensity corresponding to the white and black information on the document 111, and is irradiated onto the sensor body 48.

The conductivity of this senna body 48 changes depending on the intensity of the reflected light 113. Here, in FIG. 1, a pulsed voltage is applied to the common voltage &22, and the individual signal electrodes 75 to 7
8t - If you switch sequentially and take out the signal current '9, you will get one reflection:
) Signal currents of different magnitudes can be obtained depending on the intensity of tl13.

In a net-like manner, the common electrode 21,
By switching the voltages applied to 23, 24, 25, and 26, a signal current t can be generated from all the individual signal electrodes 71 to 94.

In this way, by obtaining the black and white information on the document Ill, the necessary l1i11 tree information can be obtained.

On the other hand, the third lubricant (jL) to the third m (c) are in the -st- diagram of the process of the l-th contact type image sensor manufacturing method, and are in the A-A' line direction in Figure 1. lllr
It is a front view. 120 in Figure 3-) is the f2 bus board l
It is amorphous silicon that has been molded by glow discharge or sufu9 ivy on the upper part, and 121 has a bowl shape.

This is a resist pattern after thermosetting.

Further, 122 in the third case) shows a band of amorphous silicon which has been subjected to plasma (CF4 glass plasma) etching using the resist pattern 121 as a mask and the resist of the resist pattern 121 has been removed.

FIG. 83(e) shows a cross-sectional view of a 2-in-sensor in which 78 electrode materials are deposited on the common 221 and 78 electrodes on FIG. There is.

However, one or more of the prior art techniques suffer from the following drawbacks. In other words, t! with amorphous silicon!
, No. 31Na), the resist pattern 121
Plasma etching was performed.

After the etching is completed, the resist is removed with an organic solvent as shown in FIG. 3(g), but due to plasma damage to the resist after plasma etching, it is difficult to completely remove the resist with an organic solvent.

For this reason, residues of amorphous silicon (renost) are deposited, and the state of the amorphous silicon surface changes from the state of glow emission or sputtering.
1lkFt increases, and withstand current increases.

Also, photosensitivity is reduced. For this reason, the ratio of one element per current to the dark current (hereinafter referred to as S/N) becomes small.

Determining the signal level of black and white information becomes difficult, and the necessary 1i
There was a drawback that it was difficult to obtain IiXfPt information.

Furthermore, since it is almost perpendicular to the edge S of the amorphous silicon that has been subjected to f plasma etching, if the aluminum or nichrome that serves as the electrode is thin, a break in the electrode will occur at the # part.

In order to prevent this, Vctff, the film thickness of the common electrode 22 and the individual signal electrodes 78 (at least about twice the film thickness of the amorphous silicon 48) are required. This was due to micro-fabrication technology [which also had the disadvantage that the processability of the required senna body part would be compromised if it was rushed.

This invention was made in order to eliminate the above-mentioned drawbacks of the conventional technology, and prevents damage to the amorphous silicon material that would affect the detection signal level, thereby increasing the S/N ratio.
To provide a method for manufacturing a finsenna that can accurately read black and white information on a document by increasing the size of the document.
purpose.

Hereinafter, the implementation of the method for manufacturing a 2-in sensor of the present invention will be explained based on a simple illustration from u@41m(a) to FIG.
d) is a cross-section showing the manufacturing process for explaining one embodiment, and is a cross-section cut along the 1-th line, and 3-(a) to 3-3. -(The same parts as eJ are given a 4- symbol.

In the fourth Z (a), 201 is amorphous silicon deposited on the entire surface of the substrate. In addition, aluminum 202 is entirely deposited on the solid amorphous silicon 201.

In addition, 203 of No. 4-Kaga) is a knee-to-shoulder in a predetermined amount of turns,
Using the pattern of the developed resist 203 as a mask, aluminum 202t is etched to form aluminum 202a.

Next, as shown in Figure 46 (c), the amorphous silicon 201 is etched using a notherturn mask of aluminum 202m and 202b to form amorphous silicon 201m and 201b.

Next, as shown in FIG. 4(d), (2) shaped aluminum electrodes 205m and 205b of the sensor body portion are formed as a resist I arm turn 204t mask. At this time.

In the 4th k(c), since the aluminum 202b as the lead individual signal electrode has already been formed, it is only necessary to pattern the electrode near the sensor body 48, and the rest can be covered entirely with the renost 204. The figure and FIG. 6 are plane views in the process of FIG. 4(e) and @4fV1), respectively.

Figures 4(a) to 4(d), Rin 5 and 6 above.
The steps shown in the figure can be summarized as follows.

First, 202 km of aluminum was deposited on the entire surface of the amorphous crystalline silicon coated on the entire surface of the glass substrate. and,
It is formed of an 11th pattern t photorin entender made of aluminum that is combined with the amorphous silicon of the sensor body portion, the common electrode, and each individual signal electrode portion.

Next, amorphous silicon is etched as the aluminum pattern mask. That him,
Photorin etching with a new second turn of 79,
Form an aluminum electrode pattern for the senna body.

There are no particular requirements for the operation method of the sensor formed through the above steps, and by performing it in the same way as the conventional technology described above,
& You can get 1' of black and white.

4-(a) ~ compared with the process shown in Figure 3 according to the prior art
In the steps described in Section 4E(d), Step 5, and Section 6-, when etching the amorphous silicon t-glaze, the etching is performed using an alumium t-mask that is in close contact with Ilc, without using the resist as a mask. There is no surface contamination of amorphous silicon by flow. For this reason 1
The original current and dark current also do not vary from the values immediately after glow discharge or s/f ivy, and there is no change in the %S/N ratio.

In addition, by using the aluminum t as a mask as an electrode as it is, the process can be omitted. And because there is amorphous silicon remaining under the aluminum, there is no break in aluminum 202k even if it is thin.
The electrodes in the sensor body have good microfabricability.

In other words, since the lead portion and the amorphous silicon/mother turn are combined with the first (second) aluminum etching over the entire surface of the substrate, it can be rough and the second Thll12
) It is better to perform follow-up etching only on the sensor body part using Flumi etching. Note that the same effect can be obtained by using nichrome instead of aluminum.

As described above, according to the manufacturing method of the line sensor of the present invention, aluminum or nichrome t amorphous silicon is used as a rigid etching mask, and the mask material itself is used as a km pole material, so that sufficient original flow is obtained. And for this it becomes possible to obtain a sufficiently low dark charge &'.

A sufficient S/N ratio can therefore be obtained.

This makes it possible to accurately obtain the own rope information on the manuscript.

[Brief explanation of the drawing]

Figure WJ1 shows the conventional line sensor and the plane IL of the line sensor obtained by the manufacturing method of the present invention. Figure 2 shows the conventional line sensor cut along the line AA' in Figure 111.
Figures 3(a) to 3k(c) are A-K of the first figure showing the steps of the conventional line sensor manufacturing method.
Fragments corresponding to iIs - 1st d) to 4th (d)
) is an embodiment of the method for manufacturing a line sensor according to the present invention.
#! Step 112f shown by cutting Ic corresponding to line A- in FIG. 1 for iL#4! A cut IL Figure 5 is 4th t
1,000 IL in the process of MJ (c) Figure 6 is as shown in Figure 4-(d)
) is the horizontal direction in the process. 201.201m, 201b...Amorphous silico 7.202.202m, 202b, 205m, 205b
-...Aluminum, 204...Resist, 48...
...Seven bodies. Patent Applicant Oki Electric Industry Co., Ltd. Procedural Amendment// June 1980 Tachibana Date Haruki Shimada, Commissioner of the Japan Patent Office 1, Indication of the case 1986 Applicant No. 1411 2, Issued 11104 Tweet at a loss Machine 3. Relationship with the case of the person making the amendment Patent Applicant (0! II) Oki Electric Industry Co., Ltd. 4. Agent 5. Date of amendment order Showa year, month, day (voluntary) 6. Target of amendment

Claims (1)

[Claims] ...A method for manufacturing a line sensor in which pixel information is obtained by energizing a sensor body formed on an insulating substrate in accordance with read multi-signals and waiting for an information pattern depending on the intensity of reflected light from a document, Etching the original conductor using the gold Is/f turn that combines the light receiving part and the lead wire part as a mask, etching the metal layer of the light receiving part to form a one-dimensional pattern [Characteristic line] How to manufacture the sensor. (2) Amorphous silicon [ff! A method for manufacturing a line sensor according to claim 1, which is defined as i mold. (3; Use of nichrome as an etching mask)
% mold in Claim 11i,! A method for manufacturing the line sensor described in J. 142. The method of manufacturing a line sensor according to claim 141, wherein aluminum is used as the +41 etching mask.