JPH03288472A - Adhesive sensor and manufacture thereof - Google Patents

Abstract

PURPOSE:To prevent a short from occurring between a first electrode and a second electrode during use of an adhesive sensor by installing a photoelectric conversion layer so that it may cover the end of a light transmitting window of the first electrode. CONSTITUTION:An adhesive sensor is the adhesive sensor 1 which irradiate the manuscript with light from the rear, and is constituted on one main surface of a transmissive substrate 11 out of a light screening layer 15, an insulating layer 17, and photoelectric conversion layers 51. In this light screening layer 15, a light transmitting window 13 for transmitting the light for manuscript irradiation from the rear of the light transmitting substrate 11 is made. And a photoelectric conversion film 31 is installed in common on a plurality of individual electrodes 21 so that it may cover a second light transmitting window end 25 and a picture element formation area 24a, and further the photoelectric conversion film 31 has a third light transmitting window 33 smaller than the second light transmitting window 25. Since the second light transmitting window 25 end of individual electrode 21 is covered with the photoelectric conversion film 31 this way, it never shorts between the individual electrode and the common electrode 51.

Description

DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Field of Application) The present invention relates to a contact sensor used in a manual part of an image reading device, and a method for manufacturing the same.

(Prior art) In recent years, facsimile or OCR (Optica
With the spread of 1Character Reader), many contact sensors used in the input section have come on the market.

The contact sensor reads information on the surface of a document by converting light reflected from the surface of the document to be read into an electrical signal using a plurality of photoelectric conversion elements arranged in an array.

This photoelectric conversion element includes a first electrode formed of chromium/aluminum (Cr/AI) or the like, a photoelectric conversion film formed of amorphous silicon (a-Si) or the like,
I, T, 0. (Indium Tin0x
1de) etc. are sequentially stacked, and a minute current is generated within the photoelectric conversion film depending on the amount of light irradiated onto the photoelectric conversion film.

Therefore, a method of manufacturing the contact sensor will be described by taking as an example a contact sensor that irradiates light onto a document from the back surface of the contact sensor.

A chromium (Cr) film is deposited on a light-transmissive substrate such as glass by a method such as vapor deposition, and then subjected to a photo engraving process.
s; Hereinafter abbreviated as PEP. ) to form a light-shielding layer having a plurality of light-transmitting windows, and then sputtering silicon oxide (Si) onto the light-transmissive substrate and the light-shielding layer.
O□) is deposited to form an insulating layer.

When manufacturing photoelectric conversion elements, chromium (
Cr) and aluminum (AI) are sequentially laminated, and the first PEP
to form a plurality of individual electrodes.

This individual electrode has a chromium electrode having a pixel formation region, a first wiring region, and a first bonding pad region by the first PEP, and a second wiring region and a second bonding pad region. It is made by patterning aluminum electrodes.

Then, an amorphous silicon (a-8i) film is deposited by a plasma CVD method, patterned into a predetermined shape by a second PEP, and then partially formed by a sputtering method. T, 0. The films are deposited in sequence. Then, the pixel formation region of the individual electrode and the amorphous silicon film 1. T, 0. 1.
1. To form a light transmission window in the T, O, film. T,
O, pattern the film with third PEP.

Furthermore, in order to form a light transmitting opening in a region corresponding to the light transmitting window of the light shielding layer, the amorphous silicon film and the individual electrodes were each dry etched as a fourth PEP.
Openings were sequentially formed by wet etching to form a contact sensor.

(Problems to be Solved by the Invention) Since conventional contact sensors are formed using the method described above, the cross sections of the individual electrodes, photoelectric conversion film, and common electrode are exposed through the opening of the photoelectric conversion element. Ta. For this reason, problems such as short circuits between the individual electrodes and the common electrode may occur depending on the usage environment. Also,
Even during the manufacturing process, short-circuits may occur between the individual electrodes and the common electrode due to etching residue, which causes a reduction in manufacturing yield.

The present invention has been made in view of the above-mentioned problems, and provides a close-contact sensor that does not cause short-circuits between individual electrodes and a common electrode during manufacturing or use, and that can be easily manufactured with high productivity. The purpose is to provide a manufacturing method.

[Structure of the Invention (Means for Solving the Problems)] The contact sensor of the present invention includes a light-transmitting substrate and a pixel formation region for forming pixels that perform photoelectric conversion, and the pixel formation region has a light-transmitting region. a plurality of first electrodes installed on a light-transmissive substrate having windows for light transmission; a photoelectric conversion layer that covers at least the pixel formation region of the first electrode and the end portion of the light-transmission window; A second electrode is provided on the photoelectric conversion layer corresponding to the pixel formation region of the electrode.

Further, the method for manufacturing a contact sensor of the present invention includes a step of installing a conductive first layer on a light-transmitting substrate, and patterning the first layer to form a pixel forming area for photoelectric conversion. and forming a first electrode by patterning the pixel formation region into a shape having a light transmission window;
a step of installing a second layer on the light-transmissive substrate and the first electrode; and patterning the second layer so as to cover at least the pixel formation region of the first electrode and the end portion of the light-transmitting application window. The method is characterized by comprising a step of forming a photoelectric conversion layer, and a step of installing a second electrode on the photoelectric conversion layer corresponding to at least a pixel formation region of the first electrode.

(Function) The close contact sensor of the present invention has a unique configuration in which a photoelectric conversion layer is provided so as to cover at least the end portion of the light transmission window of the first electrode. both electrodes are not exposed in close proximity. For this reason,
During use of the contact sensor, it is possible to prevent short circuits from occurring between the first electrode and the second electrode.

In addition, by using the method for manufacturing a contact sensor of the present invention, since the end portion of the light transmission window of the first electrode is covered with a photoelectric conversion layer, the gap between the first electrode and the second electrode may be removed during manufacturing. Foreign matter such as dust does not adhere to the surface of the sensor, making it possible to manufacture contact sensors with a high manufacturing yield.

Furthermore, according to the method for manufacturing a contact sensor of the present invention, when patterning the first electrode, the light transmission window is also patterned at the same time, so that the etching process when patterning the light transmission window later can be reduced. I can do it.

(Example) Hereinafter, a contact sensor and a manufacturing method thereof according to an example of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a schematic front view of the contact sensor of this embodiment, and FIG. 2 is a schematic cross-sectional view of the contact sensor in FIG. 1 taken along line AA'.

This contact sensor (1) is a contact sensor (1) that irradiates light onto a document from the back side, and is a light-shielding layer (1) made of a chromium (Cr) film on the main surface of a light-transmitting substrate (11) made of glass. 15) and silicon oxide (S) on the light shielding layer (15).
102) Consists of an insulating layer (17) made of a film and a plurality of photoelectric conversion elements (51) arranged in an array on this insulating layer (17).

This light-shielding layer (15>) has a light-transmitting window (13) for transmitting light for irradiating the document from the back surface of the light-transmitting substrate (11).
) is formed.

The photoelectric conversion element (51) is made of chromium (Cr), aluminum (A
An individual electrode (21) formed by sequentially laminating I), and an amorphous silicon (21) placed on this individual electrode (21).
a-3i) A photoelectric conversion film (31) made of a film, and 1 and T placed on the photoelectric conversion film (31).

0 and a common electrode (51) made of a film are laminated. A pixel (63) is formed in a region where the individual electrode (21), the photoelectric conversion film (31), and the common electrode (51) are laminated, and photoelectric conversion is performed.

The individual electrode (21) has a pixel forming area (24a) for forming a pixel (63>) and a bonding pad area (24).
4c) and a wiring area (24b) for connecting the pixel formation area (24a) and the bonding pad area (24c).
) and an aluminum electrode (28) with a bonding pad area (28c) and a wiring area (28b).
are constructed by stacking them. This is chromium (Cr)
Since aluminum (A1) is a low-resistance metal, it is possible to sufficiently reduce wiring resistance and make good ohmic contact with the photoelectric conversion film (31), and aluminum (A1) provides a strong bond with the bonding wire. This material was used in this example because of its advantages. Therefore, the present invention is not limited to this material, and other materials may be used.
) has a second light-transmitting window (13) corresponding to the first light-transmitting window (13) of the light-shielding layer (15), which is slightly larger than the first light-transmitting window (13). Transmission window (25)
is formed.

The photoelectric conversion film (31) is commonly installed on the plurality of individual electrodes (21) so as to cover the end of the second light transmission window (25) of the individual electrode (21) and the pixel forming area (24a). Furthermore, the photoelectric conversion film (31>) has a third light transmission window (33) smaller than the second light transmission window (25).

The common electrode (51) is placed on the photoelectric conversion film (31) corresponding to the pixel formation region (24a) of the individual electrode (21). Here, since a 1, T, O, film having a high light transmittance of 90% or more was used as the common electrode (51), the common electrode (51) was used as a third light transmitting window (33).
), but the third light transmitting window (3
An opening corresponding to 3> may be formed. By forming such an opening, it is possible to increase the amount of light irradiated onto the negative layer original.

By configuring the contact sensor (1) as described above, the end of the second light transmission window (25) of the individual electrode (21>) is covered with the photoelectric conversion film (31>). , the individual electrode (21) and the common electrode (5
1) There will be no short circuit between the two.

Next, a method for manufacturing the contact sensor (1) described above will be described with reference to a manufacturing process diagram of the contact sensor (1) shown in FIG.

First, as shown in FIG. 3(a), a chromium (Cr) film (I) is deposited on a light-transmissive substrate (11) such as glass by vapor deposition.
2) to form a light shielding layer (15) having a plurality of light transmitting windows (13) using PEP as shown in (b) of the same figure.

Next, as shown in (c) in the figure, a light transmitting substrate (11) is formed.
And on the light shielding layer <15), a silicon oxide (S102) film is deposited by sputtering method to form an insulating layer (I7).
) to form.

As shown in (d) in the figure, a chromium (Cr) film (23) and an aluminum (A1) film (27) are formed on the insulating layer (17).
are sequentially stacked to form 2 layers as shown in (e) and (f) in the figure.
A plurality of individual electrodes (21) and a common wiring (29) are formed by multiple PEP steps. This individual electrode (21>) is connected to the pixel forming area (24a), the first wiring area (24b), and the first wiring area (24b).
a chromium electrode (24) having a second wiring region (28b) and a second bonding pad region (28c); chrome electrode (2
The pixel formation region (24a) of 4> is patterned to form a second light transmission window (25) equivalent to the light transmission window (13) of the light shielding layer (15).

Further, as shown in (g) in the figure, after depositing an amorphous silicon (a-St) film (30) by plasma CVD method, at least the pixels of the individual electrodes (21) are coated as shown in (h) in the figure. The second light transmitting window (24a) and the vicinity of the second light transmitting window (25) are covered, and the second light transmitting window (33) is provided within the second light transmitting window (25). A photoelectric conversion film (31) was formed using PEP.

After that, as shown in (i) in the figure, 1. T, 0. After depositing the film (50), as shown in (j) in the figure, a third film is deposited to cover the pixel formation area (24a), the third light transmission window (38), and the common wiring (29). A common electrode (
51) to obtain a contact sensor (1).

Then, the area where the individual electrodes (21>, the photoelectric conversion film (31), and the common electrode (51) are laminated is the photoelectric conversion element (
61> pixel (63), which outputs an electric signal corresponding to the amount of light signal irradiated onto the photoelectric conversion film (31).

By manufacturing the contact sensor (1) in this way, the ends of the light transmission windows (25) of the individual electrodes (21> are covered with the photoelectric conversion film (31>), so the individual electrodes (21) are 21) and the common electrode (51>) will not occur.

In addition, conventionally, the third PEP provides I, T, and O.

Dry etching the membrane (50) and individual electrodes (21) in sequence.

The light transmitting windows (25) and (33) were formed by wet etching, but in the manufacturing method of the contact sensor (1) of this embodiment, the light transmitting windows (25) and (33) were formed during patterning of the individual electrodes (21).
25> is formed at the same time, the number of times the third PEP is etched can be reduced by one. Therefore, in the manufacturing method of the contact sensor (1) of this embodiment, dry etching is performed during the third PEP as in the conventional method.

The contact sensor (1) can be manufactured with high productivity without the hassle of changing wet etching and etching methods.

Furthermore, the mask sputtering method achieves high accuracy < 1
．． The third PEP can also be eliminated by installing a T, O, membrane (50) and serving as a common electrode (51). By manufacturing the contact sensor in this way, -
Layer productivity can be improved.

[Effects of the Invention] As described above, in the close contact sensor of the present invention, since the light transmitting window end portion of the first electrode is covered with the photoelectric conversion layer, it is possible to install the contact sensor on the first electrode and the photoelectric conversion layer. There will be no short circuit between the electrode and the second electrode.

In addition, since the second electrode is patterned after the photoelectric conversion layer is patterned to cover the light transmission window end of the first electrode, foreign matter such as dust may be generated during patterning of the second electrode. Also, there is no short circuit between the first electrode and the second electrode, and the manufacturing yield can be improved.

Furthermore, there is no need for the hassle of switching between dry etching and wet etching with the same PEP as in the past.
It also has the effect of being able to be manufactured with good productivity.

[Brief explanation of drawings]

FIG. 1 is a schematic front view of a contact sensor according to an embodiment of the present invention, FIG. 2 is a schematic cross-sectional view of the contact sensor taken along line AA' in FIG. 1, and FIG. 2 is a diagram illustrating a manufacturing process of the contact sensor shown in the figure. (1)...Contact sensor (11)...Light transmitting substrate (15)...Light blocking layer (17)...Insulating layer (21>...Individual electrode (25>...Second Light transmission window (31>...Photoelectric conversion film (33)...Third light transmission window (51)...Common electrode (61>...Photoelectric conversion element)

Claims (2)

[Claims] (1) A light-transmitting substrate, a pixel formation area for forming pixels that perform photoelectric conversion, and a plurality of light-transmitting windows installed on the light-transmitting substrate, each having a light-transmission window in the pixel formation area. a first electrode; a photoelectric conversion layer that covers at least the pixel formation region and the light transmission window end portion of the first electrode; and the photoelectric conversion layer that corresponds to at least the pixel formation region of the first electrode. A contact sensor characterized by comprising a second electrode placed on the layer. (2) A step of installing a conductive first layer on a light-transmissive substrate, and patterning the first layer to form a pixel formation area for photoelectric conversion and to provide light to this pixel formation area. a step of forming a first electrode by patterning it into a shape having a transmission window; a step of installing a second layer on the light-transmitting substrate and the first electrode; and a step of forming at least the first electrode. forming a photoelectric conversion layer by patterning the second layer so as to cover the pixel formation region and the end portion of the light transmission window; and at least the second layer corresponds to the pixel formation region of the first electrode. A method of manufacturing a contact sensor, comprising the step of arranging a second electrode on the photoelectric conversion layer.