JPH0682851B2 - Photo sensor array - Google Patents
Photo sensor arrayInfo
- Publication number
- JPH0682851B2 JPH0682851B2 JP59002579A JP257984A JPH0682851B2 JP H0682851 B2 JPH0682851 B2 JP H0682851B2 JP 59002579 A JP59002579 A JP 59002579A JP 257984 A JP257984 A JP 257984A JP H0682851 B2 JPH0682851 B2 JP H0682851B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photosensor array
- substrate
- electrode layer
- photoconductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 21
- 239000010408 film Substances 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000011651 chromium Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- RPPBZEBXAAZZJH-UHFFFAOYSA-N cadmium telluride Chemical compound [Te]=[Cd] RPPBZEBXAAZZJH-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
Description
【発明の詳細な説明】 〔技術分野〕 本発明はファクシミリ送受信機や文字読取装置等の画像
情報処理用光電変換装置において光信号の取出しのため
に用いられるフォトセンサアレーに関する。Description: TECHNICAL FIELD The present invention relates to a photosensor array used for taking out an optical signal in a photoelectric conversion device for image information processing such as a facsimile transceiver and a character reading device.
従来、たとえばデジタルコピーやファクシミリ等の画像
読取部を構成する光電変換手段として、一般にシリコン
フォトダイオード型の１次元フォトセンサアレーが用い
られていた。しかし、この様なフォトセンサアレーにお
いては、作製し得るシリコン単結晶の大きさに限度があ
るため長大化には限界があった。従って、特に大きな原
稿を読取るためには光学系を用いて原稿面を縮小するこ
とが必要であり、この光学系のスペースのため装置が必
然的に大型化する傾向にあった。Conventionally, a silicon photodiode type one-dimensional photosensor array has been generally used as a photoelectric conversion unit that constitutes an image reading unit such as a digital copy or a facsimile. However, in such a photosensor array, there is a limit to increase in size because there is a limit to the size of a silicon single crystal that can be manufactured. Therefore, in order to read a particularly large original, it is necessary to reduce the original surface using an optical system, and the space of the optical system tends to inevitably increase the size of the apparatus.
これに対し、最近では薄膜形成法の発展や結合樹脂と半
導体材料とを混合して塗布する方法の開発等によって、
アモルファス‐シリコン（a-Si）を用いた光導電型のフ
ォトセンサが作製できるようになった。このフォトセン
サは基板表面上にアモルファスシリコン薄層を形成する
ことにより作製されるので、大面積や長尺のフォトセン
サアレーが容易に得られる。On the other hand, recently, due to the development of a thin film forming method and the development of a method of mixing and applying a binder resin and a semiconductor material,
A photoconductive photosensor using amorphous-silicon (a-Si) can be manufactured. Since this photosensor is manufactured by forming an amorphous silicon thin layer on the surface of the substrate, a photosensor array having a large area and a long length can be easily obtained.
従来の光導電型フォトセンサアレーの具体例を第１図
（ａ），（ｂ）及び（ｃ）に示す。第１図（ａ）は部分
平面概略図であり、第１図（ｂ）はそのＸ−Ｘ′断面概
略図であり第１図（ｃ）はそのY-Y′断面概略図であ
る。図において、11は基板であり、12は光電変換部であ
る光導電層であり、13は共通電極層であり、14は個別電
極層である。即ち、従来のフォトセンサアレーは、図示
される様に、光透過性の基板11と、該基板11上に設けら
れた光導電層12と、該光導電層12の一方の面側に間隙を
あけて形成された電極の対13,14の複数と、を有してお
り、この対をなす電極のうちの一方14を個別電極とし他
方13を共通電極としていた。この様な構成のフォトセン
サアレーにおいては、第１図（ｂ）に示される如く、基
板11側から画像情報信号光を照射して読取を行う場合に
は、基板11と反対側から画像情報信号光以外の光が光導
電層12に入射すると読取部電気信号のノイズの原因とな
った。更に、上記の如き従来のフォトセンサアレーにお
いては光導電層12、共通電極層13及び個別電極層14が電
気的に遮蔽されていないために外部から電気的ノイズを
捨い易く、このため読取部電気信号が画像情報に正確に
対応したものではなくなり、読取部の解像力が低下して
しまうという欠点があった。Specific examples of conventional photoconductive photosensor arrays are shown in FIGS. 1 (a), (b) and (c). 1 (a) is a schematic partial plan view, FIG. 1 (b) is a schematic view taken along the line XX ', and FIG. 1 (c) is a schematic view taken along the line YY'. In the figure, 11 is a substrate, 12 is a photoconductive layer that is a photoelectric conversion unit, 13 is a common electrode layer, and 14 is an individual electrode layer. That is, as shown in the drawing, the conventional photosensor array has a light-transmissive substrate 11, a photoconductive layer 12 provided on the substrate 11, and a gap on one surface side of the photoconductive layer 12. A plurality of pairs of electrodes 13 and 14 are formed so as to be opened, and one of the electrodes forming the pair is an individual electrode and the other 13 is a common electrode. In the photo sensor array having such a configuration, as shown in FIG. 1B, when the image information signal light is emitted from the substrate 11 side for reading, the image information signal is transmitted from the side opposite to the substrate 11. When light other than light is incident on the photoconductive layer 12, it causes noise in the electrical signal of the reading unit. Furthermore, in the conventional photosensor array as described above, since the photoconductive layer 12, the common electrode layer 13 and the individual electrode layer 14 are not electrically shielded, it is easy to discard electrical noise from the outside, and therefore the reading unit There is a drawback in that the electric signal does not correspond exactly to the image information and the resolving power of the reading unit is lowered.
本発明は、以上の如き従来技術に鑑み、光導電型フォト
センサアレーにおいて読取部電気信号のノイズを低減さ
せ解像力を向上させることを目的とする。The present invention has been made in view of the above-described conventional techniques, and an object of the present invention is to reduce noise in an electric signal of a reading unit and improve resolution in a photoconductive photosensor array.
［本発明の概要］ 以上の如き目的は、光入射側と反対側に不透明導電層を
設けることにより達成される。より詳細には、光透過性
の基板と、該基板上に設けられた光導電層と、該光導電
層の一方の面側に間隙をあけて形成された電極の対の複
数と、を有するフォトセンサアレーにおいて、前記光導
電層の読取部基板側と反対側であって少なくとも前記間
隙に対応する部分に、絶縁層を介して電気的に接地され
た不透明導電層を形成することによって達成される。[Outline of the Present Invention] The above object is achieved by providing an opaque conductive layer on the side opposite to the light incident side. More specifically, it includes a light-transmissive substrate, a photoconductive layer provided on the substrate, and a plurality of electrode pairs formed with a gap on one surface side of the photoconductive layer. In the photosensor array, it is achieved by forming an opaque conductive layer electrically grounded via an insulating layer on a portion of the photoconductive layer opposite to the reading unit substrate side and corresponding to at least the gap. It
以下、図面を参照しつつ本発明の実施例を説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第２図（ａ），（ｂ）及び（ｃ）は本発明によるフォト
センサアレーの第１の実施例を示す図であり、第２図
（ａ）は部分平面概略図であり、第２図（ｂ）はそのX-
X′断面概略図であり、第２図（ｃ）はそのY-Y′断面概
略図である。図において、21は基板であり、たとえばガ
ラス等の透明部材からなる。22は光導電層であり、たと
えばa-Si、その他硫化カドミウム（CdS）、カドミウム
‐テルル（Cd-Te）、アモルファス‐セレン（a-Se）ま
たはアモルファス‐セレン‐テルル（a-Se-Te）の薄膜
または厚膜である。23は共通電極層であり24は個別電極
層であり、これらはたとえばアルミニウム（Al）等の導
電膜からなる。25は絶縁層であり、たとえばポリイミド
樹脂の如き有機質膜からなる。26は不透明導電層であ
り、たとえばクロム（Cr）等の遮光性導電膜からなる。
即ち、本実施例のフォトセンサアレーは、光透過性のガ
ラス基板21と、該ガラス基板21上に設けられた光導電層
22と、該光導電層22の一方の面側に間隙をあけて形成さ
れた共通電極23及び個別電極24の対の複数と、を有し、
前記光導電層22の前記基板21側と反対側であって少なく
とも前記間隙に対応する部分に、絶縁層25を介して不透
明導電層26が設けられている。2 (a), (b) and (c) are views showing a first embodiment of the photosensor array according to the present invention, and FIG. 2 (a) is a partial plan schematic view, and FIG. (B) is the X-
FIG. 2C is a schematic cross-sectional view taken along the line X ′, and FIG. 2C is a schematic view taken along the line YY ′. In the figure, reference numeral 21 is a substrate, which is made of a transparent member such as glass. 22 is a photoconductive layer, such as a-Si, other cadmium sulfide (CdS), cadmium-tellurium (Cd-Te), amorphous-selenium (a-Se) or amorphous-selenium-tellurium (a-Se-Te) Is a thin or thick film. Reference numeral 23 is a common electrode layer and 24 is an individual electrode layer, which are made of a conductive film such as aluminum (Al). An insulating layer 25 is made of an organic film such as polyimide resin. An opaque conductive layer 26 is made of a light-shielding conductive film such as chromium (Cr).
That is, the photosensor array of the present embodiment includes a light-transmissive glass substrate 21 and a photoconductive layer provided on the glass substrate 21.
22 and a plurality of pairs of a common electrode 23 and an individual electrode 24 formed with a gap on one surface side of the photoconductive layer 22,
An opaque conductive layer 26 is provided via an insulating layer 25 at a portion of the photoconductive layer 22 opposite to the substrate 21 side and corresponding to at least the gap.
上記フォトセンサアレーはたとえば次の様にして作製さ
れる。即ち、先ず、グロー放電分解法でガラス基板21上
にａ−Siを１μの厚さに成膜する。これにより、水素ま
たはハロゲン元素を含んだａ−Siからなる光導電層22が
形成される。次に、真空蒸着法によりAlを全面に0.3μ
の厚さに成膜し、ポジ型Az−1370フォトレジスト、リン
酸系エッチング液を用いてパターン加工し、共通電極層
23及び個別電極層24を形成する。更にその上にスクリー
ン印刷によりポリイミド樹脂を５回重ねて塗り、350℃
で硬化させて50μの厚さの絶縁層25を形成する。次い
で、真空蒸着法により0.2μの厚さにCrを成膜し不透明
導電層26を形成する。尚、絶縁層25及び不透明導電層26
は共通電極層23及び個別電極層24の取出し部分には形成
されていない。個別電極層24の電極幅Ａはたとえば95μ
であり、電極長さＢはたとえば5000μであり、隣接する
電極間の間隔幅Ｃはたとえば30μである。The photosensor array is manufactured as follows, for example. That is, first, a-Si film having a thickness of 1 μm is formed on the glass substrate 21 by the glow discharge decomposition method. As a result, the photoconductive layer 22 made of a-Si containing hydrogen or a halogen element is formed. Next, 0.3μ of Al is deposited on the entire surface by vacuum deposition.
Film thickness and pattern processing using positive type Az-1370 photoresist and phosphoric acid type etching solution, common electrode layer
23 and the individual electrode layer 24 are formed. Furthermore, the polyimide resin is applied 5 times by screen printing on it, and the temperature is 350 ° C.
And is cured to form an insulating layer 25 having a thickness of 50 μm. Next, Cr is deposited to a thickness of 0.2 μm by a vacuum deposition method to form the opaque conductive layer 26. The insulating layer 25 and the opaque conductive layer 26
Is not formed in the extraction portion of the common electrode layer 23 and the individual electrode layer 24. The electrode width A of the individual electrode layer 24 is 95 μ, for example.
The electrode length B is, for example, 5000 μ, and the interval width C between adjacent electrodes is, for example, 30 μ.
本実施例のフォトセンサアレーにおいては、ガラス基板
21と反対側（即ち、画像情報信号光の入射側と反対の
側）からの光の入射が不透明導電層26により阻止され、
ノイズがなく解像力が向上した。また、不透明導電層26
を電気的に一定電位とした（接地した）ところ、共通電
極層23及び個別電極層24へ流れ込む電気的ノイズが阻止
されて解像力が向上した。In the photosensor array of this embodiment, a glass substrate
The opaque conductive layer 26 blocks the incidence of light from the side opposite to 21 (that is, the side opposite to the incident side of the image information signal light).
There is no noise and the resolution is improved. Also, the opaque conductive layer 26
Was electrically set to a constant potential (grounded), the electrical noise flowing into the common electrode layer 23 and the individual electrode layer 24 was blocked, and the resolution was improved.
本実施例のフォトセンサアレーにおいては、共通電極層
23及び個別電極層24と不透明導電層26とで絶縁層25を挾
持しているため、これら電極層23及び24と導電層26との
間で電気的容量が生ずる。しかし、ポリイミド樹脂の比
誘電率は約３と小さく、膜厚も50μと厚いため１本の個
別電極層に関し生ずる容量はほぼ１ｐＦ以下であり、読
取部電気信号に与える影響は無視することができる。In the photosensor array of this embodiment, the common electrode layer
Since the insulating layer 25 is sandwiched between the 23 and individual electrode layers 24 and the opaque conductive layer 26, an electric capacitance is generated between the electrode layers 23 and 24 and the conductive layer 26. However, since the relative permittivity of polyimide resin is as small as about 3 and the film thickness is as thick as 50μ, the capacitance generated for one individual electrode layer is about 1 pF or less, and the influence on the reading section electrical signal should be ignored. You can
尚、本実施例のフォトセンサアレーにおいては、絶縁層
25及び不透明導電層26はパッシベーション膜としても機
能する。即ち、比較のため絶縁層25及び不透明導電層26
を形成しないことを除いて上記実施例と同様にしてフォ
トセンサアレーを作製した。これら比較例と上記実施例
とについて高温高湿の信頼性試験（温度85℃、湿度85
％、5000時間）及び温度サイクル試験（−50℃150
℃、各温度20分、100サイクル）を行なったところ、比
較例に比べ本発明実施例のフォトセンサアレーの劣化は
殆ど無視し得るほど小さかった。In the photosensor array of this embodiment, the insulating layer
25 and the opaque conductive layer 26 also function as a passivation film. That is, for comparison, the insulating layer 25 and the opaque conductive layer 26
A photosensor array was produced in the same manner as in the above-described example except that the above was not formed. A reliability test of high temperature and high humidity (temperature 85 ° C, humidity 85
%, 5000 hours) and temperature cycle test (-50 ℃ 150
C., each temperature 20 minutes, 100 cycles), the deterioration of the photosensor array of the example of the present invention was almost negligible compared to the comparative example.
第３図（ａ），（ｂ）及び（ｃ）は本発明によるフォト
センサアレーの第２の実施例を示す図であり、第３図
（ａ）は部分平面概略図であり、第３図（ｂ）はそのX-
X′断面概略図であり、第３図（ｃ）はそのY-Y′断面概
略図である。図において、31は基板であり、32は光導電
層であり、33は共通電極層であり、34は個別電極層であ
り、35は絶縁層であり、36は不透明導電層である。これ
らは上記第１の実施例と同様の構成を有する。但し、本
実施例においては不透明導電層36は光電変換部である光
導電層32の上方にのみ該導電層をカバーする如くに形成
されている。一方、絶縁層35上には個別電極層34側の上
方に上部電極層37が形成されている。上部電極層37は個
別電極層34の方向とほぼ直交する様に同様な間隔をおい
て形成されている。上部電極層37は所定の位置で適宜の
個別電極層34と接続されており、該個別電極層34は上部
電極層37を介して外部電源に接続される。3 (a), (b) and (c) are views showing a second embodiment of the photosensor array according to the present invention, and FIG. 3 (a) is a schematic partial plan view, and FIG. (B) is the X-
FIG. 3C is a schematic view taken along the line X ′, and FIG. 3C is a schematic view taken along the line YY ′. In the figure, 31 is a substrate, 32 is a photoconductive layer, 33 is a common electrode layer, 34 is an individual electrode layer, 35 is an insulating layer, and 36 is an opaque conductive layer. These have the same configuration as that of the first embodiment. However, in this embodiment, the opaque conductive layer 36 is formed only above the photoconductive layer 32 which is a photoelectric conversion part so as to cover the conductive layer. On the other hand, on the insulating layer 35, the upper electrode layer 37 is formed above the individual electrode layer 34 side. The upper electrode layers 37 are formed at similar intervals so as to be substantially orthogonal to the direction of the individual electrode layers 34. The upper electrode layer 37 is connected to an appropriate individual electrode layer 34 at a predetermined position, and the individual electrode layer 34 is connected to an external power source via the upper electrode layer 37.
本実施例のフォトセンサアレーにおいては不透明導電層
36が電気的遮蔽の機能を有する。In the photosensor array of this embodiment, an opaque conductive layer
36 has a function of electrical shielding.
第４図は本発明によるフォトセンサアレーの第３の実施
例を示す部分断面概略図である。この実施例において
は、基板41上に先ず共通電極層43及び個別電極層42が付
与され、その上から光導電層44が付与されている点が上
記第１び第２の実施例と異なる。45は絶縁層であり、46
は不透明導電層である。FIG. 4 is a schematic partial sectional view showing a third embodiment of the photosensor array according to the present invention. This embodiment differs from the first and second embodiments in that the common electrode layer 43 and the individual electrode layer 42 are first provided on the substrate 41, and the photoconductive layer 44 is provided thereon. 45 is an insulating layer, 46
Is an opaque conductive layer.
以上の如き本発明によれば、光電変換部へは画像情報信
号光のみが入射し、且つ該光電変換部のための電極層は
電気的に遮蔽されているので、読取電気信号にはノイズ
が入らず解像力を向上させることができる。According to the present invention as described above, since only the image information signal light is incident on the photoelectric conversion unit and the electrode layer for the photoelectric conversion unit is electrically shielded, the read electric signal is noisy. The resolution can be improved without entering.
第１図（ａ）は従来のフォトセンサアレーの部分平面図
であり、第１図（ｂ）及び（ｃ）はそれぞれそのX-X′
断面図及びY-Y′断面図である。第２図（ａ）は本発明
のフォトセンサアレーの部分平面図であり、第２図
（ｂ）及び（ｃ）はそれぞれそのX-X′断面図及びY-Y′
断面図である。第３図（ａ）は本発明のフォトセンサア
レーの部分平面図であり、第３図（ｂ）及び（ｃ）はそ
れぞれそのX-X′断面図及びY-Y′断面図である。第４図
は本発明フォトセンサアレーの部分断面図である。 21,31,41……基板、22,32,44……光導電層、23,33,43…
…共通電極層、24,34,42……個別電極層、25,35,45……
絶縁層、26,36,46……不透明導電層、37……上部電極。FIG. 1 (a) is a partial plan view of a conventional photosensor array, and FIGS. 1 (b) and 1 (c) respectively show its XX '.
It is a sectional view and a YY 'sectional view. FIG. 2 (a) is a partial plan view of the photosensor array of the present invention, and FIGS. 2 (b) and 2 (c) are XX 'sectional view and YY' thereof, respectively.
FIG. FIG. 3 (a) is a partial plan view of the photosensor array of the present invention, and FIGS. 3 (b) and 3 (c) are a XX 'sectional view and a YY' sectional view thereof, respectively. FIG. 4 is a partial sectional view of the photosensor array of the present invention. 21,31,41 …… Substrate, 22,32,44 …… Photoconductive layer, 23,33,43…
… Common electrode layers, 24,34,42 …… Individual electrode layers, 25,35,45 ……
Insulating layer, 26,36,46 …… Opaque conductive layer, 37 …… Upper electrode.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 関村 信行 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 (56)参考文献 特開 昭57−115880（ＪＰ，Ａ) 特開 昭59−10068（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Nobuyuki Sekimura 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (56) Reference JP-A-57-115880 (JP, A) JP-A-59 -10068 (JP, A)
Claims (2)
光導電層と、該光導電層の一方の面側に間隙をあけて形
成された電極の対の複数と、を有するフォトセンサアレ
ーにおいて、 前記光導電層の前記基板側と反対側であって少なくとも
前記間隙に対応する部分に、絶縁層を介して電気的に接
地された不透明導電層を有することを特徴とするフォト
センサアレー。1. A light-transmissive substrate, a photoconductive layer provided on the substrate, and a plurality of electrode pairs formed with a gap on one surface side of the photoconductive layer. In the photosensor array, an opaque conductive layer electrically grounded via an insulating layer is provided at a portion of the photoconductive layer opposite to the substrate side and corresponding to at least the gap. Sensor array.
とされ他方は共通電極とされてなる、特許請求の範囲第
１項に記載のフォトセンサアレー。2. The photosensor array according to claim 1, wherein one of the pair of electrodes is an individual electrode and the other is a common electrode.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59002579A JPH0682851B2 (en) | 1984-01-12 | 1984-01-12 | Photo sensor array |
| US06/688,356 US4650984A (en) | 1984-01-12 | 1985-01-02 | Photosensor array for treating image information |
| DE3500645A DE3500645C2 (en) | 1984-01-12 | 1985-01-10 | Photosensor arrangement |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59002579A JPH0682851B2 (en) | 1984-01-12 | 1984-01-12 | Photo sensor array |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60147173A JPS60147173A (en) | 1985-08-03 |
| JPH0682851B2 true JPH0682851B2 (en) | 1994-10-19 |
Family
ID=11533277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59002579A Expired - Lifetime JPH0682851B2 (en) | 1984-01-12 | 1984-01-12 | Photo sensor array |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0682851B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5290505B2 (en) * | 2006-09-08 | 2013-09-18 | 旭化成エレクトロニクス株式会社 | Manufacturing method of optical sensor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57115880A (en) * | 1981-01-12 | 1982-07-19 | Fuji Xerox Co Ltd | Thin film image pickup device in two dimensions |
| JPS5910068A (en) * | 1982-07-09 | 1984-01-19 | Hitachi Ltd | Optical sensor array device |
-
1984
- 1984-01-12 JP JP59002579A patent/JPH0682851B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60147173A (en) | 1985-08-03 |
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