JPH02159771A - Photoelectric conversion device - Google Patents
Photoelectric conversion deviceInfo
- Publication number
- JPH02159771A JPH02159771A JP63315773A JP31577388A JPH02159771A JP H02159771 A JPH02159771 A JP H02159771A JP 63315773 A JP63315773 A JP 63315773A JP 31577388 A JP31577388 A JP 31577388A JP H02159771 A JPH02159771 A JP H02159771A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- conversion device
- upper electrode
- substrate
- conversion section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 19
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 6
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 6
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 23
- 239000010410 layer Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、デジタル複写機やファクシミリ等の画像読取
装置などに利用される光電変換装置に関するものである
。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a photoelectric conversion device used in image reading devices such as digital copying machines and facsimiles.
従来の技術
近年、各種ＯＡ機器の発展に伴い、画像を読取る装置が
要望され、光電変換装置が開発された。2. Description of the Related Art In recent years, with the development of various office automation equipment, there has been a demand for an image reading device, and a photoelectric conversion device has been developed.
このような光電変換装置には各種のものが存するが、近
来では機器の小型化に対する要求から画面に密着して画
像を読取る密着型の光電変換装置が望まれている。There are various types of such photoelectric conversion devices, but in recent years, due to the demand for miniaturization of devices, there has been a demand for close-contact photoelectric conversion devices that read images in close contact with a screen.
そこで、照明用の光源と、薄膜光電変換素子アレイが光
軸上に配設されたロッドレンズアレイとが画面に対向す
るよう並設した光電変換装置などが開発された。しかし
、このような光電変換装置ではロッドレンズアレイを使
用するために光路長を要して装置の薄型化が制約されて
おり、しかも、このロッドレンズアレイは高価な部材で
あるため装置が高価なものとなっている。Therefore, a photoelectric conversion device has been developed in which a light source for illumination and a rod lens array in which a thin film photoelectric conversion element array is arranged on the optical axis are arranged side by side so as to face a screen. However, in such photoelectric conversion devices, the use of rod lens arrays requires a long optical path, which limits the ability to make the devices thinner.Moreover, the rod lens arrays are expensive components, making the devices expensive. It has become a thing.
そこで、ロッドレンズアレイのような結像光学系を使用
せず、薄膜光電変換素子アレイを画面に密着させて画像
を読取る光電変換装置が開発された。Therefore, a photoelectric conversion device was developed that reads images by placing a thin film photoelectric conversion element array in close contact with a screen without using an imaging optical system such as a rod lens array.
このような装置を光電変換装置の一従来例として第４図
ないし第６図に基づいて説明する。この光電変換装置１
では、透明なガラス基板２の」二に、下部電極３と、窓
部４が形成された遮光膜５とが設けられ、透光性を有す
る絶縁層６により被われている。そして、この絶８Ｍ６
の上に設けられた光導電膜７の上で、前記絶縁層６に形
成されたコンタクトホール８を介して前記下部電極３と
接続された上部電極９と一体のセンサ電極１０と、他方
のセンサ電極１１とが対向して、光電変換部１２を形成
している。Such a device will be described as a conventional example of a photoelectric conversion device with reference to FIGS. 4 to 6. This photoelectric conversion device 1
Here, a lower electrode 3 and a light-shielding film 5 in which a window portion 4 is formed are provided on the second side of a transparent glass substrate 2, and covered with an insulating layer 6 having a light-transmitting property. And this absolute 8M6
A sensor electrode 10 integrated with the upper electrode 9 connected to the lower electrode 3 through a contact hole 8 formed in the insulating layer 6 on the photoconductive film 7 provided thereon, and the other sensor The photoelectric conversion section 12 is formed by facing the electrode 11 .
ここで、上述のような光電変換装置１の製作工程を第６
図を参考に説明する。まず、第６図（ａ）に例示するよ
うに、前記ガラス基板２の上にスパッタリングなどで形
成されたクロム等の金属膜がフォトリソグラフィ処理で
パターニングされ、前記窓部４が開いた遮光膜５と、前
記下部電極３とが形成される。さらに、第６図（ｂ）〜
（ｄ）に例示するように、ＳｉＯｘやＳｉＮｘ等からな
る絶縁層６とａ−８ｉやＣｄｓ等からなる光導電層７′
とがスパッタリングや蒸着等により順次積層形成され、
各々エツチング処理により、前記光導電［７’が前記光
導電膜７に成形され、前記コンタク１〜ホール８が前記
絶縁層６に形成される。そこで、第６図（ｅ）に例示す
るように、スパッタリングや蒸着等により形成されたＡ
Ｑ等の金属膜がエツチングされて前記各種電極９〜１１
が形成され、前記光電変換部］２が設けられている。な
お、この光電変換装置１では、前記光電変換部１２の上
にポリイミド等による保護層（図示せず）が形成されて
いる。Here, the manufacturing process of the photoelectric conversion device 1 as described above is described in the sixth step.
This will be explained with reference to the diagram. First, as illustrated in FIG. 6(a), a metal film such as chromium formed by sputtering or the like on the glass substrate 2 is patterned by photolithography, and a light shielding film 5 with the window portion 4 opened is patterned. and the lower electrode 3 are formed. Furthermore, Fig. 6(b) ~
As illustrated in (d), an insulating layer 6 made of SiOx, SiNx, etc. and a photoconductive layer 7' made of a-8i, Cds, etc.
are sequentially layered by sputtering, vapor deposition, etc.
The photoconductive layer 7' is formed in the photoconductive film 7, and the contacts 1 to 8 are formed in the insulating layer 6 by etching. Therefore, as illustrated in FIG. 6(e), A
Metal films such as Q are etched to form the various electrodes 9 to 11.
is formed, and the photoelectric conversion section] 2 is provided. In this photoelectric conversion device 1, a protective layer (not shown) made of polyimide or the like is formed on the photoelectric conversion section 12.
このような構成において、この光電変換装Ｍ１では、装
置裏側に配設された光源（図示せず）から窓部４を通過
した光により、光電変換部１２の表面に押圧されつつ搬
送される原稿（図示せず）の画面が照明される。そして
、画面の反射光が直接入射する光電変換部１２から、画
像に対応した電気信号が上部電極９を介して下部電極３
に伝送され、画像印刷装置（図示せず）などに出力され
ることになる。In this configuration, in the photoelectric conversion device M1, the document being conveyed is pressed against the surface of the photoelectric conversion section 12 by light that passes through the window section 4 from a light source (not shown) disposed on the back side of the device. (not shown) is illuminated. Then, an electric signal corresponding to the image is transmitted to the lower electrode 3 via the upper electrode 9 from the photoelectric conversion unit 12 to which the reflected light from the screen directly enters.
The image is then transmitted to an image printing device (not shown) and outputted to an image printing device (not shown).
発明が解決しようとする課題
上述のような光電変換装置１は、ロッドレンズアレイ６
のような結像光学系を用いた光電変換装置などに比して
装置が安価で機器の薄型化も容易である。ここで、この
光電変換装置１では、遮光＝３
膜５が金属から形成されて導電性を有しているため、こ
の遮光膜５と上部電極９とによりコンデンサが形成され
ていることになる。このため、光電変換部１２から伝送
される信号の出力が低下して、光電変換装置１の感度が
悪くなっている。Problems to be Solved by the Invention The photoelectric conversion device 1 as described above includes a rod lens array 6.
Compared to a photoelectric conversion device using an imaging optical system such as the above, the device is cheaper and it is easier to make the device thinner. Here, in this photoelectric conversion device 1, light shielding=3 Since the film 5 is made of metal and has conductivity, a capacitor is formed by the light shielding film 5 and the upper electrode 9. Therefore, the output of the signal transmitted from the photoelectric conversion unit 12 is reduced, and the sensitivity of the photoelectric conversion device 1 is deteriorated.
課題を解決するための手段
透光性を有する基板の表面に下部電極を形成し、一体に
形成された上部電極により下部電極と導通された光電変
換部を設け、光電変換部と基板との間に非導電性の遮光
膜を介在させる。Means for Solving the Problem A lower electrode is formed on the surface of a substrate having light-transmitting properties, a photoelectric conversion section is provided that is electrically connected to the lower electrode by an integrally formed upper electrode, and a structure is formed between the photoelectric conversion section and the substrate. A non-conductive light-shielding film is interposed between the two.
作用
透光性を有する基板の表面に下部電極を形成し、一体に
形成された上部電極により下部電極と導通された光電変
換部を設け、光電変換部と基板との間に非導電性の遮光
膜を介在させたことにより、上部電極と平行に位置する
導電性を有する層が存在せず、上部電極がコンデンサの
平行電極として動作することがない。A lower electrode is formed on the surface of a substrate that has operational translucency, a photoelectric conversion section is provided that is electrically connected to the lower electrode through an integrally formed upper electrode, and a non-conductive light shield is provided between the photoelectric conversion section and the substrate. By interposing the film, there is no conductive layer located parallel to the upper electrode, and the upper electrode does not operate as a parallel electrode of the capacitor.
実施例
本発明の一実施例を第１図ないし第３図に基づ一
いて説明する。なお、前述の従来例と同一の部分は同一
の名称及び符号を用い、説明も省略する。Embodiment An embodiment of the present invention will be explained based on FIGS. 1 to 3. Note that the same parts as in the conventional example described above will be given the same names and symbols, and their explanation will be omitted.
まず、本実施例の光電変換装置１３では、ガラス基板２
上に形成された下部電極３を被うように、窓部１４とコ
ンタクトホール１５が形成された非導電性の遮光膜１６
が、例えば、酸素欠陥を有するなどして黒色の五酸化タ
ンタル膜１６′により設けられている。そして、この遮
光膜１６の上に、前述の光電変換装置１と同様、各種電
極９〜１１により光電変換部１２が形成されている。First, in the photoelectric conversion device 13 of this embodiment, the glass substrate 2
A non-conductive light shielding film 16 in which a window portion 14 and a contact hole 15 are formed so as to cover the lower electrode 3 formed thereon.
is provided by, for example, a black tantalum pentoxide film 16' having oxygen defects. A photoelectric conversion section 12 is formed on this light shielding film 16 by various electrodes 9 to 11, similar to the photoelectric conversion device 1 described above.
ここで、上述のような光電変換装置１３の製作工程を、
第２図を参考にして説明する。ます、第２図（ａ）に例
示するように、前記ガラス基板２の上にスパッタリング
などで形成されたクロム等の金属膜がフォトリソグラフ
ィ処理でパターニングされ、下部電極３が形成される。Here, the manufacturing process of the photoelectric conversion device 13 as described above is as follows.
This will be explained with reference to FIG. First, as illustrated in FIG. 2(a), a metal film of chromium or the like formed by sputtering or the like on the glass substrate 2 is patterned by photolithography to form the lower electrode 3.
そこで、第２図（ｂ）に例示するように、例えば、酸素
欠陥を有するなどして黒色の五酸化タンタル膜１６′と
、ａ−８ｉやＣｄｓ等からなる光導電Ｎ７′とがスパッ
タリングや蒸着等により順次積層形成される。そして、
第２図（Ｃ）、（ｄ）４こ例示するように、これら五酸
化タンタル膜１６′と光導電層７′とは順次エツチング
処理され、光導電膜７と前記コンタクトホール１５及び
窓部１４とが形成される。そコテ、第２図（ｅ）に例示
するように、スパッタリングや蒸着等により形成された
ＡＱ等の金属膜がエツチングされて光電変換部１２が設
けられている。Therefore, as illustrated in FIG. 2(b), for example, a black tantalum pentoxide film 16' having oxygen defects and a photoconductive N7' made of a-8i, Cds, etc. are sputtered or vapor-deposited. etc., and are sequentially laminated. and,
As shown in FIGS. 2(C) and 2(d), the tantalum pentoxide film 16' and the photoconductive layer 7' are sequentially etched, and the photoconductive film 7, the contact hole 15 and the window portion 14 are etched. is formed. As illustrated in FIG. 2(e), a metal film such as AQ formed by sputtering or vapor deposition is etched to provide a photoelectric conversion section 12.
なお、第３図（ａ）に例示するように、第２図（ｃ）、
（ｄ）に例示した光導電Ｍ７′と五酸化タンタル膜１６
’とのエツチング処理を同時に行なって、第３図（ｂ）
に例示するような光電変換装置１７を製作する供とも考
えられる。この場合、この光電変換装置１７の製作工程
が少ないので、歩留りの向上が期待される。In addition, as illustrated in FIG. 3(a), FIG. 2(c),
Photoconductive M7' and tantalum pentoxide film 16 illustrated in (d)
Figure 3 (b).
It is also considered to be used for manufacturing a photoelectric conversion device 17 as exemplified in . In this case, since the number of manufacturing steps for the photoelectric conversion device 17 is small, an improvement in yield is expected.
このような構成において、上述のような光電変換装置１
３．１７は、前述の光電変換装置１と同様に機能する。In such a configuration, the photoelectric conversion device 1 as described above
3.17 functions similarly to the photoelectric conversion device 1 described above.
ここで、これらの光電変換装置１３．１７では、上部電
極９の下には、各々非導電性の遮光膜１６とガラス基板
２とが設けられているだけなので、光電変換部１２から
下部電極３に至る配線にコンデンサとして動作する部分
が存在しないことが分かる。Here, in these photoelectric conversion devices 13 and 17, only the non-conductive light shielding film 16 and the glass substrate 2 are provided under the upper electrode 9, so that the photoelectric conversion unit 12 is connected to the lower electrode 3. It can be seen that there is no part of the wiring that operates as a capacitor.
なお、本実施例の光電変換装置１３では、遮光膜１６を
黒色の五酸化タンタルにより形成するものとしたが、本
発明はこれに限定されるものではなく、非導電性と遮光
性を両立している各種材料の使用が考えられる。In the photoelectric conversion device 13 of this embodiment, the light-shielding film 16 is made of black tantalum pentoxide, but the present invention is not limited to this. Various materials can be considered.
発明の効果
本発明は、上述のように透光性を有する基板の表面に下
部電極を形成し、一体に形成された上部電極により下部
電極と導通された光電変換部を設け、光電変換部と基板
との間に非導電性の遮光膜を介在させたことにより、上
部電極と平行に位置する導電性を有する層が存在せず、
」二部電極がコンデンサの平行電極として動作すること
はないので、この上部電極により光電変換部から伝送さ
れる信号の出力が低下せず、光電変換装置の感度が高い
等の効果を有するものである。Effects of the Invention The present invention forms a lower electrode on the surface of a light-transmitting substrate as described above, provides a photoelectric conversion section electrically connected to the lower electrode through an integrally formed upper electrode, and connects the photoelectric conversion section with the lower electrode. By interposing a non-conductive light-shielding film between the substrate and the substrate, there is no conductive layer located parallel to the upper electrode.
Since the two-part electrode does not operate as a parallel electrode of the capacitor, this upper electrode does not reduce the output of the signal transmitted from the photoelectric conversion unit, and has the effect of increasing the sensitivity of the photoelectric conversion device. be.
第１図は本発明の一実施例の縦断側面図、第２図（ａ）
〜（ｅ）は製作工程の説明図、第３図（ａ）。
（ｂ）は他の製作工程の説明図、第４図は従来例の縦断
側面図、第５図は平面図、第６図（ａ）〜（ｅ）は製作
工程の説明図である。
２・・基板、３・下部電極、９ ・上部電極、１２・・
光電変換部、１３．１７・・光電変換装置、１６・・遮
光膜Fig. 1 is a longitudinal sectional side view of an embodiment of the present invention, Fig. 2(a)
~(e) is an explanatory view of the manufacturing process, and FIG. 3(a). 4(b) is an explanatory diagram of another manufacturing process, FIG. 4 is a longitudinal sectional side view of the conventional example, FIG. 5 is a plan view, and FIGS. 6(a) to (e) are explanatory diagrams of the manufacturing process. 2. Substrate, 3. Lower electrode, 9. Upper electrode, 12.
Photoelectric conversion unit, 13.17...Photoelectric conversion device, 16...Light shielding film
Claims (1)
、一体に形成された上部電極により前記下部電極に導通
された光電変換部と、この光電変換部と前記基板との間
に介在させた非導電性の遮光膜とからなることを特徴と
する光電変換装置。 ２、五酸化タンタルにより遮光膜を形成したことを特徴
とする請求項１記載の光電変換装置。[Scope of Claims] 1. A light-transmitting substrate having a lower electrode formed on its surface, a photoelectric conversion section electrically connected to the lower electrode through an integrally formed upper electrode, and this photoelectric conversion section and the above-mentioned photoelectric conversion section. A photoelectric conversion device comprising a non-conductive light-shielding film interposed between a substrate and a substrate. 2. The photoelectric conversion device according to claim 1, wherein the light shielding film is formed of tantalum pentoxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63315773A JPH02159771A (en) | 1988-12-14 | 1988-12-14 | Photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63315773A JPH02159771A (en) | 1988-12-14 | 1988-12-14 | Photoelectric conversion device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02159771A true JPH02159771A (en) | 1990-06-19 |
Family
ID=18069376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63315773A Pending JPH02159771A (en) | 1988-12-14 | 1988-12-14 | Photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02159771A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07321348A (en) * | 1994-05-30 | 1995-12-08 | Nec Corp | Photoelectric converting element |
-
1988
- 1988-12-14 JP JP63315773A patent/JPH02159771A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07321348A (en) * | 1994-05-30 | 1995-12-08 | Nec Corp | Photoelectric converting element |
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