JPS628951B2 - - Google Patents
Info
- Publication number
- JPS628951B2 JPS628951B2 JP51113093A JP11309376A JPS628951B2 JP S628951 B2 JPS628951 B2 JP S628951B2 JP 51113093 A JP51113093 A JP 51113093A JP 11309376 A JP11309376 A JP 11309376A JP S628951 B2 JPS628951 B2 JP S628951B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- receiving element
- light
- optical
- optical signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000003287 optical effect Effects 0.000 claims description 23
- 239000010409 thin film Substances 0.000 claims description 8
- 239000010408 film Substances 0.000 description 17
- 239000013307 optical fiber Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光信号取り出し用の薄膜受光素子に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin film light receiving element for extracting optical signals.
例えば、フアクシミリ用センサーとしては、従
来、シリコンホトダイオードの１次元アレーが一
般的に用いられているが、作製し得るシリコン単
結晶の大きさに限界がある。このため、シリコン
ホトダイオード一次元アレーは長尺化が困難であ
る。これに対してCdSe膜、Se−As−Te非晶質
膜等を用いた薄膜受光素子アレーは、真空蒸着に
よつて作製可能であるので、長尺化が可能であ
る。第１図にその構造の一例を示す。これは、透
光性の基板１の表面に伸延したストライプ状の下
部電極２と光導電体層４と上部電極５からなり、
３の部分は光信号取り出し用の透明電極窓となつ
ており、光信号は基板１側から入力する。下部電
極２のうち光信号取出し用の窓３以外は金属膜で
覆われ非透光性になつているので、不必要な光信
号電流が混入することがなく、従つて撮影した像
の解像度は高いという第１の特長を有し、また金
属配線であるので、微細な配線を行なつても配線
抵抗は小さいという第２の特長を有する。
For example, a one-dimensional array of silicon photodiodes has conventionally been commonly used as a facsimile sensor, but there is a limit to the size of the silicon single crystal that can be produced. For this reason, it is difficult to make a one-dimensional array of silicon photodiodes long. On the other hand, thin film light receiving element arrays using CdSe films, Se-As-Te amorphous films, etc. can be manufactured by vacuum evaporation, and therefore can be made long. FIG. 1 shows an example of its structure. This consists of a striped lower electrode 2, a photoconductor layer 4, and an upper electrode 5 extending on the surface of a transparent substrate 1.
The portion 3 is a transparent electrode window for taking out optical signals, and the optical signals are input from the substrate 1 side. Since the lower electrode 2 other than the window 3 for extracting the optical signal is covered with a metal film and is non-transparent, unnecessary optical signal current is not mixed in, and the resolution of the photographed image is therefore low. The first feature is that it is high, and since it is a metal wiring, the second feature is that the wiring resistance is low even if the wiring is fine.
一方、光学系にオプテイカルフアイバを用いた
フアクシミリ装置は、従来のレンズ系を用いた装
置に比べて、光学系の調整が簡単であり、周辺の
解像度低下や光量不足が無く、形状的にも小型化
が可能になるという特長を有する。 On the other hand, facsimile devices that use optical fibers in their optical systems are easier to adjust the optical system than devices that use conventional lens systems, do not cause a decrease in peripheral resolution or lack of light, and are more compact in shape. It has the advantage of being able to be made smaller.
オプテイカルフアイバーを用いる場合、光の拡
散による解像度の低下を防ぐために、オプテイカ
ルフアイバと薄膜受光素子とを密着させる必要が
あるが、そのためには、基板１の厚みが障害にな
るので、光信号は上部電極５側より入射する必要
がある。 When using an optical fiber, it is necessary to bring the optical fiber and the thin-film photodetector into close contact with each other in order to prevent a decrease in resolution due to light diffusion. needs to be incident from the upper electrode 5 side.
オプテイカルフアイバによる光結合のように、
上部電極側から光信号を入射する場合には、第１
図のような構造の受光素子アレーでは、光入射の
ために、上部電極５を透光性にしなければならな
い。しかし、この構造では、光信号取り出し用の
窓３以外の部分にも光が入射し、不必要な光信号
電流が混入して、撮影した像の解像度を落とすと
いう欠点があり、上部電極側から光信号を入射す
ることは実際上不可能であつた。
Like optical coupling using optical fibers,
When the optical signal is input from the upper electrode side, the first
In the light-receiving element array having the structure shown in the figure, the upper electrode 5 must be made transparent for light to enter. However, this structure has the disadvantage that light enters into areas other than the window 3 for taking out the optical signal, and unnecessary optical signal current is mixed in, reducing the resolution of the photographed image. It was practically impossible to input optical signals.
そこで、本発明の目的は、上部電極側から光信
号を入力する場合に、解像度が高くて、良好な画
像再生の可能な受光素子を提供することにある。 SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a light-receiving element that has high resolution and is capable of good image reproduction when an optical signal is input from the upper electrode side.
上記目的を達成するために、本発明は、電極
（上部電極、下部電極）の一方もしくは双方の電
極の不必要な部分を絶縁膜で覆うことを特徴とす
るものである。例えば、下部電極を形成したの
ち、絶縁膜を蒸着し、電極窓に相当する部分の絶
縁膜のみをホトレジスト加工により除去し、その
後、光導電体層を形成し、更に上部透光性電極を
形成することにすれば、仮りに上部透光性電極が
広くて不必要な部分から入力光を拾つたとして
も、不必要な部分の下部電極は絶縁膜で覆われて
いるので、不必要な光信号電流が混入することが
なく、解像度の高い受光素子を得ることができ
る。また、電極面積は絶縁膜で覆われた部分だけ
小さくなるので、暗電流もそれだけ小さくなる。
In order to achieve the above object, the present invention is characterized in that unnecessary portions of one or both of the electrodes (upper electrode, lower electrode) are covered with an insulating film. For example, after forming the lower electrode, an insulating film is deposited, only the part of the insulating film corresponding to the electrode window is removed by photoresist processing, then a photoconductor layer is formed, and then an upper transparent electrode is formed. Even if the upper translucent electrode is wide and picks up input light from an unnecessary part, the lower electrode in the unnecessary part is covered with an insulating film, so unnecessary light will be picked up. A light receiving element with high resolution can be obtained without mixing of signal current. Furthermore, since the electrode area is reduced by the portion covered with the insulating film, the dark current is also reduced accordingly.
以下に本発明を実施例によつて詳細に説明す
る。
The present invention will be explained in detail below using examples.
上部電極として光信号入射用透光性電極を有す
るSe−As−Te系非晶質半導体受光素子アレーの
電極構造の平面図を第２図に、第２図のAA′断面
図を第３図に、工程を第４図に示す。基板６の表
面にクロム膜を1000Åの厚みに被着し、ホトレジ
スト加工により不要な部分のクロム膜を除去し
て、ストライプ状の下部電極７を形成する。次
に、ストライプ状下部電極７のうち光信号取り出
し部分１２を除いて他の部分をSiO2膜８で覆
う。このSiO2膜はスパツタリングにより2500Å
の厚みに形成し、ホトレジスト加工により精度良
く形成したものである。このあと、マスク蒸着に
よつて２μｍの厚みを有するSe−As−Te光導電
体層９を形成し、更にその上に膜厚1000Åの非透
光性の金電極１０と膜厚120Åの透光性の金電極
１１（透過率50％）とをマスク蒸着により形成す
る。なお、入力光は上部電極１１側から入力され
る。この電極構造は、半透明膜から光信号を入力
するので光の利用率が高く、また、光信号取り出
し部分１２以外の下部電極はSiO2の絶縁膜で覆
われ非導電性になつているので、不必要な光信号
電流が混入することがなく、従つて撮影した像の
解像度は高い。また、電極面積は絶縁膜で覆われ
た部分だけ小さくなつているので、それだけ暗電
流も小さくなつている。 Figure 2 is a plan view of the electrode structure of the Se-As-Te amorphous semiconductor light-receiving element array that has a transparent electrode for optical signal input as the upper electrode, and Figure 3 is a cross-sectional view AA' in Figure 2. The process is shown in FIG. A chromium film with a thickness of 1000 Å is deposited on the surface of the substrate 6, and unnecessary portions of the chromium film are removed by photoresist processing to form a striped lower electrode 7. Next, a portion of the striped lower electrode 7 except for the optical signal extraction portion 12 is covered with a SiO 2 film 8. This SiO 2 film has a thickness of 2500Å by sputtering.
It is formed with a thickness of After that, a Se-As-Te photoconductor layer 9 with a thickness of 2 μm is formed by mask vapor deposition, and a non-transparent gold electrode 10 with a thickness of 1000 Å and a transparent gold electrode with a thickness of 120 Å are formed thereon. A transparent gold electrode 11 (transmittance 50%) is formed by mask vapor deposition. Note that the input light is input from the upper electrode 11 side. This electrode structure has a high light utilization rate because the optical signal is input from the semi-transparent film, and the lower electrode other than the optical signal extraction portion 12 is covered with an SiO 2 insulating film and is non-conductive. , there is no unnecessary optical signal current mixed in, and therefore the resolution of the photographed image is high. Furthermore, since the electrode area is reduced by the portion covered with the insulating film, the dark current is also reduced accordingly.
次に平面情報記録体上の画像情報を本発明の受
光素子アレイを用いて時系列的電気信号に変換す
る光電変換装置の一例について説明する。 Next, an example of a photoelectric conversion device that converts image information on a flat information recording medium into a time-series electrical signal using the light receiving element array of the present invention will be described.
例えばフアクシミリ送信機などに用いる場合、
平面画像情報の光電変換装置として、直線状に配
置した本発明のホトセンサアレイを使用し、電気
的走査と、これと直交する方向への情報記録体の
機械的走査により平面走査を行なう方式が、高速
かつ長寿命などの特徴を有す。 For example, when used in facsimile transmitters, etc.
As a photoelectric conversion device for planar image information, there is a method in which the photosensor array of the present invention arranged in a linear manner is used, and planar scanning is performed by electrical scanning and mechanical scanning of the information recording medium in a direction perpendicular to this. It has features such as high speed and long life.
第５図は、上記の電気的な切換と走査を行なう
回路の一実施例図であり、第６図は第５図の回路
の信号波形図である。 FIG. 5 is a diagram showing an embodiment of the circuit for performing the above-mentioned electrical switching and scanning, and FIG. 6 is a signal waveform diagram of the circuit shown in FIG.
第５図においては、光学系と電気回路系を示し
ている。また、この例においては、各々５個のス
トライプ状電極を備えたホトセンサアレイの一部
分のみを示し、他の部分は省略した。 In FIG. 5, an optical system and an electric circuit system are shown. Further, in this example, only a portion of the photosensor array each having five striped electrodes is shown, and other portions are omitted.
第５図において、１３は画像平面、１４は光電
変換を行なう直線部（紙面に垂直にのびてい
る）、３０は光フアイバーであり、複数の光フア
イバーが一次元に配列されている。１５は本発明
の受光素子アレイ４０上の直線部１４に対応する
結像部である。S1〜S5はそれぞれ信号N1〜N5が
与えられた時にONになりその他はOFFであるよ
うなスイツチ（例えばFET等を用いたスイツ
チ）、２０は、入力端子l0に加えられたスタート
信号Ｍを順次、端子l1〜l5へ出力する走査回路
（例えばシフトレジスター等からなる）、１６は走
査回路を動作させるクロツク信号Ｌを出力する走
査制御回路、１７は電気的走査期間中に走査回路
の入力端子l0に加えられるスタート信号Ｍの出力
回路であり、１８はストライプ電極７の出力信号
Ｏを増幅する増幅回路、Ｅはストライプ電極７を
正（または負）電位にバイアスする電源、Ｒは抵
抗、Ｃは容量であり、１９は出力端子である。
又、直線部１４にそつて（紙面に垂直なＸ方向）
電気的走査が行なわれ、これと直角方向（Ｙ方
向）に機械的走査が行なわれる。 In FIG. 5, 13 is an image plane, 14 is a straight section (extending perpendicular to the plane of the paper) for performing photoelectric conversion, and 30 is an optical fiber, in which a plurality of optical fibers are arranged in one dimension. Reference numeral 15 denotes an imaging section corresponding to the linear section 14 on the light receiving element array 40 of the present invention. S 1 to S 5 are switches that are turned ON when signals N 1 to N 5 are applied, and OFF otherwise (for example, switches using FETs), and 20 is a switch that is applied to the input terminal l 0. A scanning circuit (consisting of, for example, a shift register, etc.) sequentially outputs a start signal M to terminals l1 to l5 ; 16 a scanning control circuit outputting a clock signal L for operating the scanning circuit; 17 during an electrical scanning period; 18 is an amplifier circuit for amplifying the output signal O of the stripe electrode 7 , and E biases the stripe electrode 7 to a positive (or negative) potential. A power supply, R is a resistance, C is a capacitor, and 19 is an output terminal.
Also, along the straight line part 14 (X direction perpendicular to the page)
Electrical scanning is performed, and mechanical scanning is performed in the direction perpendicular to this (Y direction).
以下、第６図を参考にして第５図の回路の動作
を説明する。 The operation of the circuit shown in FIG. 5 will be explained below with reference to FIG.
まず、スタート信号Ｍが与えられるとクロツク
信号Ｌによつて走査回路２０が動作して、スイツ
チS1〜S2に順次信号N1〜N5が与えられ、スイツ
チS1〜S5は順次ONになり、出力信号Ｏが増幅回
路１８へ送られる。 First, when the start signal M is applied, the scanning circuit 20 is operated by the clock signal L, and the signals N1 to N5 are sequentially applied to the switches S1 to S2 , and the switches S1 to S5 are sequentially turned ON. The output signal O is sent to the amplifier circuit 18.
したがつて、画像平面１３上の紙面に直交する
直線部１４上の点b1〜b5における明暗の状態が、
第６図Ｋに示すごとき場合には、出力Ｏはそれぞ
れ第６図に示すようになり、出力端子１９の出力
は、Ｋの明暗と一致した信号となる。 Therefore, the brightness and darkness at points b 1 to b 5 on the straight line section 14 perpendicular to the plane of the image plane 13 are as follows:
In the case shown in FIG. 6K, the output O becomes as shown in FIG. 6, and the output from the output terminal 19 becomes a signal that matches the brightness of K.
以上説明したごとく、本発明の受光素子を適用
すれば、平面画像上の１直線部からの光信号によ
り、結像性能のすぐれた、明るい実像を形成する
ことが可能になり、受光素子アレイの電気的切換
と走査、および電気的走査と直交する方向への機
械的走査と合わせ、平面画像の時系列的高解像光
電変換が可能になるという効果がある。 As explained above, by applying the light-receiving element of the present invention, it becomes possible to form a bright real image with excellent imaging performance using an optical signal from one straight line on a plane image, and the light-receiving element array becomes In combination with electrical switching and scanning, and mechanical scanning in a direction perpendicular to electrical scanning, this has the effect of enabling time-series high-resolution photoelectric conversion of planar images.
なお、この本発明の受光素子を適用した光電変
換装置においては、光フアイバー３０を用いてい
るが、光フアイバーを用いずに受光素子４０を画
像平面１３に極めて近接させて用いることもでき
る。 Although the optical fiber 30 is used in the photoelectric conversion device to which the light-receiving element of the present invention is applied, the light-receiving element 40 can also be used in close proximity to the image plane 13 without using an optical fiber.
又、以上の実施例においては、光導電膜として
Se−As−Te系のものを用いたが、他の物も使用
できることは勿論である。さらに、透光性電極と
しては、上記のAu薄膜の他にCr、Al等の薄膜、
In2O3、SnO2等も使用できる。 In addition, in the above examples, as a photoconductive film
Although a Se-As-Te based material was used, it goes without saying that other materials can also be used. Furthermore, in addition to the above-mentioned Au thin film, thin films of Cr, Al, etc., can be used as transparent electrodes.
In 2 O 3 , SnO 2 etc. can also be used.
しかしながら、Se−As−Te系の光導電体に対
しては、基板加熱しないで蒸着可能な金属薄膜
（例えばAu、Al、Cr）を透光性電極として用い
なければならない。 However, for Se-As-Te based photoconductors, a metal thin film (for example, Au, Al, Cr) that can be deposited without heating the substrate must be used as a transparent electrode.
以上説明したごとく、本発明によれば、上部電
極側より光信号を入力する方式の受光素子で、解
像度の高く、暗電流の小さい受光素子を簡便に作
製することが可能であり、また受光素子アレーの
長大化が可能であるので、フアクシミリ用センサ
ー等として有用である。
As explained above, according to the present invention, it is possible to easily manufacture a light receiving element with high resolution and low dark current using a method in which an optical signal is input from the upper electrode side. Since the array can be made long, it is useful as a facsimile sensor, etc.
第１図は従来技術による薄膜受光素子アレーの
一例の平面図であり、第２図は本発明の実施例の
平面図であり、第３図は第２図のAA′断面図であ
り、第４図はその工程を示す図であつて、第２図
のAA′断面図であり、第５図、第６図は本発明の
受光素子を用いたフアクシミリ送伝機の概念図で
ある。
６：基板、７：ストライプ電極、８：SiO2
膜、９：光導電体層、１０：非透光性電極、１
１：透光性電極、１２：光信号取り出し部。
FIG. 1 is a plan view of an example of a thin film photodetector array according to the prior art, FIG. 2 is a plan view of an embodiment of the present invention, and FIG. FIG. 4 is a diagram showing the process, and is a sectional view taken along the line AA' in FIG. 2, and FIGS. 5 and 6 are conceptual diagrams of a facsimile transmitter using the light receiving element of the present invention. 6: Substrate, 7: Stripe electrode, 8: SiO 2
Film, 9: Photoconductor layer, 10: Non-transparent electrode, 1
1: Transparent electrode, 12: Optical signal extraction part.
Claims (1)
有する薄膜受光素子であつて、一方もしくは双方
の電極と光導電体層の間に絶縁層を設けることに
より光信号取出し用窓を規定したことを特徴とす
る受光素子。1 A thin film light receiving element having a photoconductor layer and a pair of electrodes sandwiching the photoconductor layer, in which an insulating layer is provided between one or both electrodes and the photoconductor layer to define a window for taking out an optical signal. A light receiving element characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11309376A JPS5339095A (en) | 1976-09-22 | 1976-09-22 | Photo detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11309376A JPS5339095A (en) | 1976-09-22 | 1976-09-22 | Photo detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5339095A JPS5339095A (en) | 1978-04-10 |
| JPS628951B2 true JPS628951B2 (en) | 1987-02-25 |
Family
ID=14603295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11309376A Granted JPS5339095A (en) | 1976-09-22 | 1976-09-22 | Photo detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5339095A (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54139341A (en) * | 1978-04-20 | 1979-10-29 | Canon Inc | Information processing unit |
| JPS55108781A (en) * | 1979-02-15 | 1980-08-21 | Fuji Xerox Co Ltd | Light receiving element |
| JPS56142683A (en) * | 1980-04-09 | 1981-11-07 | Ricoh Co Ltd | Photoelectric converter |
| JPS5754363A (en) * | 1980-09-19 | 1982-03-31 | Hitachi Ltd | Photosensor array device |
| JPS5787275A (en) * | 1981-09-12 | 1982-05-31 | Canon Inc | Information processor |
| JPS58111366A (en) * | 1981-12-25 | 1983-07-02 | Fuji Xerox Co Ltd | Long-sized thin-film reading element |
| JPS6035550U (en) * | 1983-08-18 | 1985-03-11 | 東北リコ−株式会社 | Amorphous silicon line sensor |
| JPS61281550A (en) * | 1985-06-06 | 1986-12-11 | Fuji Electric Co Ltd | Adhesion type image sensor |
| JPH0614542B2 (en) * | 1987-10-23 | 1994-02-23 | 富士ゼロックス株式会社 | Long document reading element |
-
1976
- 1976-09-22 JP JP11309376A patent/JPS5339095A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5339095A (en) | 1978-04-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS628951B2 (en) | ||
| US4567374A (en) | Photoelectric converting device with a plurality of divided electrodes | |
| US4943839A (en) | Contact type image sensor | |
| US4691242A (en) | Contact type image sensor having multiple common electrodes to provide increased pixel density | |
| JPS5840856A (en) | Array for photosensor | |
| JPS61189065A (en) | Image sensor | |
| JPS6327871B2 (en) | ||
| JPS6140143B2 (en) | ||
| JPS6317554A (en) | Photoconductive device | |
| JPH02132860A (en) | Close contact type image sensor | |
| KR910005603B1 (en) | Photo electric converter | |
| JP2573342B2 (en) | Light receiving element | |
| KR100503269B1 (en) | Light sensing device employing a single tft serving both functions of sensing and switching, and a control method of the same | |
| JP3146509B2 (en) | 2D contact image sensor | |
| JPH039632B2 (en) | ||
| JPS62269358A (en) | Image sensor | |
| JPH0434861B2 (en) | ||
| JPS60160660A (en) | Reading element for original and color original reader using said reading element | |
| JPS61280659A (en) | Contact type image sensor | |
| JPH0715144Y2 (en) | Coplanar type optical sensor | |
| JPH0433144B2 (en) | ||
| JPH0318057A (en) | Image sensor | |
| JPS60219522A (en) | Photosensor | |
| JPH02159771A (en) | Photoelectric conversion device | |
| JPS6245169A (en) | Image sensor and manufacture of same |