JPS58162055A - Thin film photoelectric converter - Google Patents
Thin film photoelectric converterInfo
- Publication number
- JPS58162055A JPS58162055A JP57045878A JP4587882A JPS58162055A JP S58162055 A JPS58162055 A JP S58162055A JP 57045878 A JP57045878 A JP 57045878A JP 4587882 A JP4587882 A JP 4587882A JP S58162055 A JPS58162055 A JP S58162055A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- transparent
- substrate
- conductive film
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 18
- 239000010408 film Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 24
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 12
- 238000006243 chemical reaction Methods 0.000 claims description 58
- 238000000605 extraction Methods 0.000 claims description 10
- 239000002184 metal Substances 0.000 abstract description 14
- 229910052751 metal Inorganic materials 0.000 abstract description 14
- 230000004907 flux Effects 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000010985 leather Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000011253 protective coating Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 206010011224 Cough Diseases 0.000 description 1
- 241001494479 Pecora Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は薄膜形光電変換素子に関し、特に透明基板の下
方から受光する光電変換素子の構造に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thin film photoelectric conversion element, and particularly to a structure of a photoelectric conversion element that receives light from below a transparent substrate.
従来、ファクシミＩＪ送信機用の光電変換素子としては
、ＩＣ技術等で製作されているＭＯ８やＣＯＤの１次元
アレイが一般に用いられている。Conventionally, as a photoelectric conversion element for a facsimile IJ transmitter, a one-dimensional array of MO8 or COD manufactured using IC technology or the like has been generally used.
しかし詐取しうるシリコン単結晶の大きさに限界がある
ためにアレイの長尺化が困難であり、原稿の読取幅の拡
張に対しては、光電変換素子の密度を高くしなければな
らず価格、性能にも影響していた。ま友、原稿からの画
偉は縮小結像して光電変換素子に照射するので、このた
めのレンズ系が必要となる。このレンズ系は縮小率が大
きくなる程その光路長全長くしなければならなＬｎｆ：
、め、装置の小形化に不利であることと、光路の微妙な
調整が必要になっていた。このことから、最近原稿の幅
と光電変換装置とｔ−１：１で対応させ、前記レンズ系
を不要とした密着読取り装置が実用化されつつある。当
然、光電変換素子プレイは原稿と同等の長さが必要とな
）、各素子の電気的特性は全長に渡って安定で、しかも
均一であることが請求される。However, there is a limit to the size of the silicon single crystal that can be stolen, making it difficult to lengthen the array, and in order to expand the reading width of documents, the density of photoelectric conversion elements must be increased, which increases the cost. , which also affected performance. Well, since the image from the manuscript is reduced in size and irradiated onto the photoelectric conversion element, a lens system is required for this purpose. The greater the reduction ratio of this lens system, the longer the total optical path length must be Lnf:
However, this method is disadvantageous in terms of miniaturization of the device, and requires delicate adjustment of the optical path. For this reason, close-contact reading devices that eliminate the need for the lens system have recently been put into practical use, in which the width of the document corresponds to the photoelectric conversion device at a ratio of t-1:1. Naturally, the photoelectric conversion element play must have a length equivalent to that of the original), and the electrical characteristics of each element must be stable and uniform over the entire length.
第１図は従来の光電変換素子の一例の断面図である。FIG. 1 is a cross-sectional view of an example of a conventional photoelectric conversion element.
絶縁基板１の上に共通電極２が形成され、この上にＣｄ
Ｓ、Ｃｄ８ｅ、８ｅ等の光電変換材料列３が形成され、
更にこの上に８ｎ０１．ＩＴＯ等の透明導電層４と入’
ｓ ”ｒ＠ Ａｕ等の分離され几不透明電極層５が配置
されている。原稿からの画偉光束１０ｒ！上方から照射
され、不透明電極層５で照光されていない透明導電層４
の露出している部分と、共通電極２とが相対している部
分で光電変換素子列のｌビ、トを構成するものである。A common electrode 2 is formed on an insulating substrate 1, and a Cd
A photoelectric conversion material row 3 of S, Cd8e, 8e, etc. is formed,
Furthermore, 8n01. Transparent conductive layer 4 such as ITO
A separated transparent conductive layer 5 made of Au or the like is arranged.The transparent conductive layer 4 is irradiated from above and is not illuminated by the opaque electrode layer 5.
The exposed portion of the photoelectric conversion element array and the opposing portion of the common electrode 2 constitute the first and second portions of the photoelectric conversion element array.
しかしながら、通常この種の光電変換素子の電気信号レ
ベルは、 １０ 〜１０ ム１１にの非常に小さい値
であ〕、光電変換材３Ｉ／ｃ僅かのピンホールが存在す
ると光信号に関係なく電気信号が発生する。特に、不透
明電極層５と共通電極２と相対している部分の方が面積
が広いので暗電流が発生し易（、Ｓ／Ｎ劣化への影響が
大きい、ｔた、光電変換材３の上部に設置する透明導電
層４は、通常形成時の基板温度を３００℃以上の高温に
するが、光電変換材３に悪影響がある九め低温で形成し
なければならない。この結果、所望の小さい値の電気抵
抗が得られず、Ｓ／Ｎ、光応答特性等が悪化する。However, the electric signal level of this type of photoelectric conversion element is usually a very small value of 10 to 10 mm11], and if there is a slight pinhole in the photoelectric conversion material 3I/C, the electric signal will not be transmitted regardless of the optical signal. occurs. In particular, since the area of the opaque electrode layer 5 facing the common electrode 2 is larger, dark current is more likely to occur (the upper part of the photoelectric conversion material 3 has a large effect on S/N deterioration). The transparent conductive layer 4 installed in the transparent conductive layer 4 is normally formed at a substrate temperature of 300° C. or higher, but it must be formed at a lower temperature than 300° C., which has an adverse effect on the photoelectric conversion material 3. As a result, the desired small value can be achieved. The electrical resistance cannot be obtained, and the S/N, photoresponse characteristics, etc. deteriorate.
第゛２図は従来の光電変換素子の他の例の断面図である
。FIG. 2 is a sectional view of another example of a conventional photoelectric conversion element.
この例は前述の光電変換材３にピンホールがあっても暗
電流を増加させないようにブリ、ジ形に構成し友もので
ある。しかし受光部は不透明電極層５と不透明共通電極
層２の無い対向した部分になる。このため、例えば８ビ
ット／ｍｍ程度の密度を得るにはその開口部の寸法は０
．１ｍｍＸ０．１ｍｍ程になり、暗電流は減少するが、
明電流も減少し結果として８／Ｎの向上は來現できない
。In this example, even if there is a pinhole in the photoelectric conversion material 3 described above, it is constructed in a square shape so that the dark current does not increase. However, the light-receiving portion is an opposing portion where the opaque electrode layer 5 and the opaque common electrode layer 2 are not provided. Therefore, to obtain a density of about 8 bits/mm, for example, the size of the opening is 0.
．． It becomes about 1mm x 0.1mm, and the dark current decreases, but
The bright current also decreases, and as a result, an improvement of 8/N cannot be achieved.
この他、いずれの構造に於いても高密度配線であるので
、耐環境性をうる几めに、基板上全域に亘ヤ保護コート
が必要となる。In addition, since both structures involve high-density wiring, a protective coating is required over the entire surface of the substrate to ensure environmental resistance.
しかし、基板の上方から受光する場合には、この保護コ
ート材は透明な材料を使う必要があり、しかも厳密な膜
厚制御音しないと感度のばらつきを生じる。使用する材
料が限定される上、製造技術がより複雑となるので低価
格化、高性能化が困難であるという欠点があった。However, when light is received from above the substrate, it is necessary to use a transparent material as the protective coating material, and if there is no strict film thickness control, variations in sensitivity will occur. The disadvantages are that the materials used are limited and the manufacturing technology becomes more complex, making it difficult to lower prices and improve performance.
本発明の目的は上記欠点を除去し、光電特性、また価格
、信頼性等が大幅に改善され実用に供し得るようにした
薄膜形光電変換素子全提供することにある。An object of the present invention is to eliminate the above-mentioned drawbacks, and to provide a thin film type photoelectric conversion element which can be put into practical use and whose photoelectric characteristics, price, and reliability are significantly improved.
本発明によれば、原稿からの信号光を受光する絶縁性透
明基板と、該基板上に直線的に形成され、かつ帯状の受
光開口部を有する不透明導電膜と、前記受光開口部を含
み少なくとも前記不透明導電膜上を覆う如く設置し九透
明絶縁層と、咳絶縁層上の前記受光開口部に対応した位
置に設けた帯状の透明導電膜よ〕なる共通電極と、前記
透明絶縁層上、および前記共通電極上に少なくとも前記
不透明導電膜より幅広に形成した光電変換材膜と、該光
電変換材膜上に自ど置し九各々分離され几複数の電気信
号取出個別電極とを含んで構成される薄膜形光電変換素
子と、さらに前記不透明導電層と両口透明導電膜よりな
る共通電極とが前記個別電極端の前方部に対応する部分
に設は次前記絶縁層の穴を介して接続されて構成される
薄膜形光電変換素子と、さらに前記電気信号取出個別電
極端が同一線上で相対して両側に配列され、一方の該電
気信号取出個別電極は前記開口部と交叉して設置され、
他方の前記電気信号取出個別電極は前記開口部上に無い
ことを特徴とする薄膜形光電変換素子が得られる。According to the present invention, there is provided an insulating transparent substrate that receives signal light from a document, an opaque conductive film formed linearly on the substrate and having a band-shaped light receiving opening, and at least one including the light receiving opening. a common electrode consisting of a transparent insulating layer disposed to cover the opaque conductive film, a band-shaped transparent conductive film provided at a position corresponding to the light-receiving opening on the cough insulating layer, and a common electrode on the transparent insulating layer; and a photoelectric conversion material film formed on the common electrode to be at least wider than the opaque conductive film, and a plurality of electrical signal extraction individual electrodes disposed on the photoelectric conversion material film and separated from each other. A thin film type photoelectric conversion element, and a common electrode made of the opaque conductive layer and the double-ended transparent conductive film are provided at a portion corresponding to the front part of the individual electrode ends, and then connected through the holes in the insulating layer. A thin film type photoelectric conversion element constituted by a thin film type photoelectric conversion element configured with a thin film type photoelectric conversion element, and further the ends of the electric signal extraction individual electrodes are arranged on both sides facing each other on the same line, and one of the electric signal extraction individual electrodes is installed to intersect with the opening. ,
A thin film photoelectric conversion element is obtained, characterized in that the other electric signal extraction individual electrode is not located above the opening.
本発明によ勺上記のように構成される薄膜形光電変換素
子は、透明導電膜からなる共通電極と、光電変換材膜を
介して配置される電気信号取出個別電極との対向する領
域は、透明導電膜による受光部分だけとなる。基板上に
直接設けた不透明導電膜と電気信号取出個別電極との間
には透明絶縁層が形成されているために、万一この部分
の光電変換材膜にピンホールがあってもこの絶縁層によ
ってさえぎられ暗電流の増加は起〕えな込。According to the present invention, in the thin film photoelectric conversion element configured as described above, the area where the common electrode made of the transparent conductive film and the electric signal extraction individual electrodes arranged via the photoelectric conversion material film are opposed to each other. Only the light-receiving portion is made of a transparent conductive film. Since a transparent insulating layer is formed between the opaque conductive film provided directly on the substrate and the individual electrical signal extraction electrodes, even if there is a pinhole in the photoelectric conversion material film in this area, this insulating layer will be removed. An increase in dark current occurs due to the blockage caused by
また、透明導電膜は光電変換材膜音形成する以前に設置
できるので基板の温度を充分高くできる。Furthermore, since the transparent conductive film can be installed before forming the photoelectric conversion material film, the temperature of the substrate can be raised sufficiently.
このため低抵抗の透明導電膜が得られる。従って、従来
の光電変換素子において問題になっていたシヘおよび光
応答が改善される。他にも基板の下方から受光するため
、耐環境性のための保護コートは特に透明である必要が
無く、充分厚く基板の上面に形成した配線、光電変換材
膜に塗布することができる。しかもその膜厚に不均一性
があっても光電特性に何ら影響を与えることは無い・本
発明の実施例について図面を用いて説明する。Therefore, a transparent conductive film with low resistance can be obtained. Accordingly, the shading and photoresponse, which were problems in conventional photoelectric conversion elements, are improved. In addition, since light is received from below the substrate, the protective coat for environmental resistance does not need to be particularly transparent, and can be coated sufficiently thickly on the wiring and photoelectric conversion material film formed on the upper surface of the substrate. Furthermore, even if there is non-uniformity in the film thickness, it does not affect the photoelectric characteristics in any way.Examples of the present invention will be described with reference to the drawings.
第３図は本発明の第１の実施例の断面図である。FIG. 3 is a sectional view of the first embodiment of the invention.
ガラスよりなる透明基板１１の上にＣｒ、Ｔａ。Cr and Ta are deposited on a transparent substrate 11 made of glass.
ＡＩ 等の不透明な金属層１２ｔ−約１００ＯＡの厚
さに蒸着し、帯状の開口部を設ける。さらにこの上にＳ
ｉｏ２． ＩＩ ！０３． Ｓ ｉ ｓＮａ等の透明
絶縁層１４をスバ、りし、少々くとも不透明な金属層１
２よシ幅広く、厚さ約５００ＯＡに形成する。A layer 12t of an opaque metal such as AI is deposited to a thickness of about 100 OA and provided with band-shaped openings. Furthermore, on top of this
io2. II! 03. After removing the transparent insulating layer 14 such as Si sNa, the metal layer 1, which is at least slightly opaque, is removed.
It is formed to be wider than 2 and about 500 OA thick.
次に、ＩＴＯや８ ｎ ０２等の透明導電層１３を金属
層１２の開口部に対応した位置に設置し共通電極を形成
する。さらにこの上にアモルファス・シリコン膜１５１
１ｔ生成し、電気信号’ｔＭｊｌ＃）出すたみのｔ％密
度配線個別電極２６を透明電極層１３方向へ延長させて
設置し、それぞれが交叉し友平面で光電変換素子の１ピ
ツ）１−形成している。Next, a transparent conductive layer 13 such as ITO or 8n02 is placed at a position corresponding to the opening of the metal layer 12 to form a common electrode. Furthermore, an amorphous silicon film 151 is formed on top of this.
The individual electrodes 26 are extended in the direction of the transparent electrode layer 13, and are intersected to form one pin of the photoelectric conversion element on the friend plane. is forming.
このような構造の光電変換素子は基板１１の下方よ〕原
稿からの画像光束１０を受光するので不透明金属層１２
の開口部以外からは不必要な光信号電流が混入すること
が無いように充分透光できる構造にできる。このため、
広い領域に渡る画像光束ｌＯがあってζ解儂度の高−セ
ンサを得ることができる。Since the photoelectric conversion element having such a structure receives the image light beam 10 from the original from below the substrate 11, the opaque metal layer 12
It is possible to create a structure that allows sufficient light to pass through so that unnecessary optical signal current does not mix in from areas other than the opening. For this reason,
There is an image light beam lO over a wide area, and a sensor with a high degree of ζ resolution can be obtained.
８／Ｎｆ：劣化させる大きな原因となっていた高密度配
線電極１６と、アモルファス・シリコン膜１５に挾む不
透明金属層１２との間を流れる暗電流は、その間に透明
絶縁層１４を介在させたことによって極めて減少し、８
／Ｎは格段に大きくできる。この絶縁層１４の膜厚は１
００ＯＡ程度から率が低下するので５０００λＳ度が最
適である。ｔた、アモルファス・シリコン膜１４が設置
される面はほとんど透明絶縁層１４面であり僅に透明導
電層１３による段差のみである。この透明導電層１３の
膜厚は通常数１００Ａ程度であるために、とかく大きな
段差部分に発生していたアモルファス・シリコン膜１５
のクラックは無くな）−安定な光電変換材膜を得ること
ができる０通常この種のパターン化技術には、フッｉｌ
ｌを用いたケミカルエッチを必要とし、基板１１面ある
いは受光開口Ｂ１ｓに損傷を与えることが多かっ九が、
これが不要となシ、精度の裏込センサを得ることができ
る。8/Nf: The dark current that flows between the high-density wiring electrode 16 and the opaque metal layer 12 sandwiched between the amorphous silicon film 15, which was a major cause of deterioration, is eliminated by interposing the transparent insulating layer 14 between them. 8.
/N can be made significantly larger. The thickness of this insulating layer 14 is 1
Since the rate decreases from about 00OA, 5000λS degrees is optimal. Furthermore, the surface on which the amorphous silicon film 14 is disposed is almost the surface of the transparent insulating layer 14, and there is only a slight difference in level due to the transparent conductive layer 13. Since the film thickness of this transparent conductive layer 13 is usually about several hundred amps, the amorphous silicon film 15 that has been generated in particularly large step portions
(No cracks) - A stable photoelectric conversion material film can be obtained 0 This type of patterning technology usually requires a film
It requires chemical etching using l, which often damages the substrate 11 surface or the light-receiving aperture B1s.
This is not necessary and a highly accurate back-loaded sensor can be obtained.
第４図は本発明の第２の実施例の断面図である。FIG. 4 is a sectional view of a second embodiment of the invention.
絶縁性透明基板２１の上に帯状の受光開口部をもつ不透
明金属層２２、透明絶縁層２４、透明導を層２３、アモ
ルファス・シリコン嗅２５，４密度配線個別電極２６を
順に形成し、配置するのは前述の第１の実施例と同様で
ある。ただし、個々の１固別電極２６端の前方に対応す
る部分の透明絶縁層２４には、透明導電層２３と不透明
金属層１２との接１呪用穴２７が設けられている。On an insulating transparent substrate 21, an opaque metal layer 22 having a band-shaped light-receiving opening, a transparent insulating layer 24, a transparent conductive layer 23, an amorphous silicon layer 25, and a four-density wiring individual electrode 26 are formed and arranged in this order. This is the same as in the first embodiment described above. However, a contact hole 27 between the transparent conductive layer 23 and the opaque metal layer 12 is provided in a portion of the transparent insulating layer 24 corresponding to the front end of each one fixed electrode 26 .
このような構造の光電変換素子は、第１の実施例で述べ
た特長を有することはもちろん、耕土に共通電極となる
透明導電層２３は、各ビット毎、あるｂは各ブロック毎
に接続用穴２７ｆ：介して不透明金属層１２に接続され
る几め、共通電極としての電気抵抗をさらに小さくする
ことができる。The photoelectric conversion element having such a structure not only has the features described in the first embodiment, but also the transparent conductive layer 23, which serves as a common electrode for the cultivated soil, is used for connection for each bit, and for each block. Hole 27f: Through which the hole is connected to the opaque metal layer 12, the electrical resistance as a common electrode can be further reduced.
これによって、光電変換特性の過度応答、感度等がさら
に改善され高性能な光電変換素子をうることができる。As a result, the transient response, sensitivity, etc. of the photoelectric conversion characteristics are further improved, and a high-performance photoelectric conversion element can be obtained.
接続用穴２７を設は九九め、その上に設置されるアモル
ファス・シリコンｌ１ｉ２５に対する構造変化の影響が
万一存在しても、個別電極２６端の延長上に位置するた
めに暗電流の増加とはならず、何ら特性上の影響は無い
。The connection hole 27 is designed very carefully, and even if there is an effect of structural change on the amorphous silicon 11i25 installed above it, the dark current will increase because it is located on the extension of the end of the individual electrode 26. Therefore, there is no effect on the characteristics.
第５図（ａｌ、 （ｂ）は本発明の第３の実施例の平面
図及びＡ−Ａ’断面図である。FIGS. 5(a) and 5(b) are a plan view and a sectional view taken along the line AA' of the third embodiment of the present invention.
絶縁性透明基板３１の上に帯状の受光開口部３８をもつ
不透明金属層３２、透明絶縁層３４、透明導電層３３．
アモルファス・シリコンＷ３５、高密度配線個別電極３
６．３７を順に形成する。一方の高密度配線個別電極３
６Ｆｉ受光開ロ部３８に対応して画像光束ｌＯの明暗に
対応した信号管検出する電極であり、この電極に近接し
九他方の高密度配線個別電極３７は不透明金属層３２で
遮光されて、画像光束１０があっても常に暗信号【検出
するものである。An opaque metal layer 32 having a band-shaped light-receiving opening 38 on an insulating transparent substrate 31, a transparent insulating layer 34, a transparent conductive layer 33.
Amorphous silicon W35, high density wiring individual electrode 3
6.37 is formed in sequence. One high-density wiring individual electrode 3
It is an electrode for detecting a signal tube corresponding to the brightness and darkness of the image light flux lO corresponding to the 6Fi light receiving aperture part 38, and the other high-density wiring individual electrode 37 that is close to this electrode is shielded from light by the opaque metal layer 32. Even if there is an image light beam 10, a dark signal is always detected.
このような横取にすれば、検出される双方の信号の差分
をとることによって信号処理を高精度に行なえるように
なり新たな効果が発生する。If such interception is used, a new effect will be produced because signal processing can be performed with high precision by taking the difference between both detected signals.
光電変換素子は一般に信号のレベルが１ｏ −ｔ ２１
０”−’Ａ程度と非常に小さいので、本発明による暗電
流の減少対策は、Ｓ／Ｎｔ−向上させるのに極めて効果
的なものであり、実質的な高感度化を実現するものであ
る。また温度変化に対する暗電流の増加も極めて小さく
なり、とくに温度上昇を伴う回路装置が近傍に存在して
も充分その性能を発揮できるようになる。Generally, the signal level of a photoelectric conversion element is 1o −t 21
Since the dark current is very small, on the order of 0''-'A, the measure to reduce dark current according to the present invention is extremely effective in improving the S/Nt-, and achieves a substantial increase in sensitivity. In addition, the increase in dark current due to temperature changes is extremely small, and even if there is a circuit device in the vicinity that experiences a rise in temperature, its performance can be fully demonstrated.
本発明による薄膜形光電変換素子を例えばファクシミリ
送信機に用いれば、光電変換材膜のアルファス・シリコ
ンの形成は容易に長尺化ができるので、縮小レンズ系を
不要としたＡ４判、Ｂ４判等の密着形イメージセンサが
低価格高感度で且つ高信頼性で得られるようになる。If the thin film type photoelectric conversion element according to the present invention is used in a facsimile transmitter, for example, the alpha silicon of the photoelectric conversion material film can be easily formed into a long length, so that A4 size and B4 size can be used without the need for a reduction lens system. Contact type image sensors such as these can now be obtained at low cost, with high sensitivity, and with high reliability.
以上詳細に説明したように、本発明によれば、光電特性
と信頼性を改善し、低価格の光電変換素子が得られると
いう効果が得られる。As described above in detail, according to the present invention, it is possible to improve the photoelectric characteristics and reliability, and to obtain a low-cost photoelectric conversion element.
第１図は従来の光電変換素子の一例の断面図、第２図は
従来の光電変換素子の他の例の断面図、第３図は本発明
の第１の実施例の断面図、第４図は本発明の第２の実施
例の断面図、第５図（ａ）、 ｆｂｌは本発明の第３の
実施例の平面図及び断面図である。
１・・・・・・絶縁基板、２・・・・・・共通電極、３
・・・・・・光電変換材膜別、４・・・・・・透明導電
層、５・・・・・・不透明電極層、ｌＯ・・・・・・画
像光束、１１・・・・・・絶縁性透明基板、１２・・・
・・・金属層、１３・・・・・・透明導電層、１４・・
・・・・絶縁層、１５・・・・・・アモルファス・シリ
コン膜、１６・・・・・・配線電極、２１・・・・・・
絶縁性透明基板、２２・・・・金属層、２３・・・・・
・透明導電層、２４・・・・・・絶ｍｍ、２５・・・・
・・アモルファス・シリコン膜、２６・・・・・・配線
電極、３１・・・・・・絶縁性透明基板、３２・・・・
・・金属層、３３・・・・・・透明導電層、３４・・・
・・・絶縁ＩＬ ３ｓ・・・・・・アモルファス・シリ
コン膜、３６・・・・・・配線電極、３７・・・・・・
暗電流検出個別電極、３８・・・・・・受光開口部。
羊１図
革２ 図
革４図
一韮−
ＩＩ
（α）
（ｂン
革５ 阻FIG. 1 is a sectional view of an example of a conventional photoelectric conversion element, FIG. 2 is a sectional view of another example of a conventional photoelectric conversion element, FIG. 3 is a sectional view of a first embodiment of the present invention, and FIG. The figure is a cross-sectional view of the second embodiment of the present invention, and FIG. 5(a) is a plan view and a cross-sectional view of the third embodiment of the present invention. 1...Insulating substrate, 2...Common electrode, 3
......By photoelectric conversion material film, 4...Transparent conductive layer, 5... Opaque electrode layer, lO... Image light flux, 11...・Insulating transparent substrate, 12...
...Metal layer, 13...Transparent conductive layer, 14...
...Insulating layer, 15...Amorphous silicon film, 16...Wiring electrode, 21...
Insulating transparent substrate, 22...metal layer, 23...
・Transparent conductive layer, 24... absolute mm, 25...
... Amorphous silicon film, 26 ... Wiring electrode, 31 ... Insulating transparent substrate, 32 ...
...Metal layer, 33...Transparent conductive layer, 34...
...Insulation IL 3s...Amorphous silicon film, 36...Wiring electrode, 37...
Dark current detection individual electrode, 38... Light receiving aperture. Sheep 1 Figure Leather 2 Figure Leather 4 Figure Ichigo - II (α) (bn Leather 5 Inhibition
Claims (5)
明基板と、該基板上面に直線的に形成され、かつ帯状の
受光開口部を有する不透明導電膜と、前記受光開口部を
含み少なくとも前記不透明導電膜上を覆り如く設置した
透明絶縁層と、該絶縁層上の前記受光開口部に対応した
位置に設けた帯状の透明導電膜よルなる共通電極と、前
記透明絶縁層上および前記共通電極上に少なくとも前記
不透明導電膜より幅広に形成した帯状光電変換材膜と、
該光電変換材膜上に配置した分離された複数の電気信号
取出個別電極とを含むことｔ４Ｉ徴とする薄膜形光電変
換素子。(1) An insulating transparent substrate that receives light from a signal source on its bottom surface, an opaque conductive film that is formed linearly on the top surface of the substrate and has a band-shaped light receiving opening, and an opaque conductive film that includes the light receiving opening. a transparent insulating layer disposed to cover at least the opaque conductive film; a common electrode made of a strip-shaped transparent conductive film disposed on the insulating layer at a position corresponding to the light-receiving opening; and a common electrode on the transparent insulating layer. and a strip-shaped photoelectric conversion material film formed on the common electrode at least wider than the opaque conductive film;
A thin film photoelectric conversion element characterized in that it includes a plurality of separate electrical signal extraction individual electrodes disposed on the photoelectric conversion material film.
板と、該基板上面に直線的に形成され、かつ帯状の受光
開口部【有する不透明導電膜と、前記受光開口部を含み
少なくとも前記不透明導電膜上を覆う如く設置した透明
絶縁層と、該絶縁層上の前記受光開口部上に対応した位
置に少なくとも設置した透明導電膜よ〕なる共通電極と
、前記透明絶縁層上および前記共通電極上に少なくも前
記不透明導電膜よシ幅広に形成した帯状光電変換材膜と
、該光電変換材膜上に配置され次複数の各々分離された
電気信号取出個別電極とを含む薄膜形光電変換素子にお
いて、前記不透明導電層と前記透明導電膜よ〕なる共通
電極とが前記個別電極端の前方に対応する部分に設けた
前記絶縁層の穴を介して接続されていることを特徴とす
る薄膜形光電変換素子。(2) an insulating transparent substrate that receives light on the bottom surface of the substrate, an opaque conductive film formed linearly on the top surface of the substrate and having a band-shaped light receiving opening; a common electrode consisting of a transparent insulating layer disposed to cover at least the opaque conductive film, a transparent conductive film disposed at least at a position corresponding to the light-receiving opening on the insulating layer; A thin film type comprising: a strip-shaped photoelectric conversion material film formed on the common electrode at least wider than the opaque conductive film; and a plurality of separate electric signal extraction individual electrodes disposed on the photoelectric conversion material film and separated from each other. In the photoelectric conversion element, the opaque conductive layer and the common electrode, which is the transparent conductive film, are connected through holes in the insulating layer provided at portions corresponding to the front ends of the individual electrodes. Thin film photoelectric conversion element.
板と、咳基板上面に直線的に形成され、かつ帯状の受光
開口ｆＩＳｅ有する不透明導電層と、前記受光開口部を
含み少なくとも前記不透明導電膜上を覆う如く設置した
透明絶縁層と、該絶縁層上の前記受光開口部上に対応し
次位置に少なくとも設置した透明導電膜よりなる共通電
極と、前記透明絶縁層上および前記共通電極に、少なく
とも前記不透明導電膜よシ幅広に形成した帯状光電変換
材膜とｔ該充電変換材膜上に各層分離されて配置され次
電気信号取出個別電極會含む薄膜形光電変換素子におり
て、前記電気信号取出個別電極端が同一線上で相対して
両側に配列され、一方の該電気信号取出個別電極はｌｌ
Ｉ記開口開口部又して設置され、他方の前記信号取出細
別電極は前記受光開口部上に無いことを特徴とする薄膜
形光電変換素子。(3) an insulating transparent substrate that receives the signal light on its lower surface; an opaque conductive layer formed linearly on the upper surface of the substrate and having a band-shaped light receiving opening fISe; a transparent insulating layer disposed to cover the opaque conductive film; a common electrode made of a transparent conductive film disposed at least at a position corresponding to and next to the light-receiving opening on the insulating layer; A thin film type photoelectric conversion element including a common electrode, a strip-shaped photoelectric conversion material film formed at least wider than the opaque conductive film, and individual electrodes for extracting electric signals arranged separately in each layer on the charge conversion material film. The ends of the electric signal take-out individual electrodes are arranged on the same line on opposite sides, and one of the electric signal take-out individual electrodes is
1. A thin film photoelectric conversion element, characterized in that the signal extraction subdivided electrode is located above the light receiving aperture, and the other signal extraction subdivided electrode is not located above the light receiving aperture.
特徴とする特許請求の範囲第（１）項、（２）項および
第（３）項記載の薄膜形光電変換素子。(4) The thin film photoelectric conversion element according to claims (1), (2), and (3), wherein the transparent insulating layer has a thickness of 0.1 μm or more.
られていることｔ−特徴とする特許請求の範囲＠（１）
項、 ＃［２）項および第（３）項記載の薄膜形光電変
換素子。(5) Claims @ (1) characterized in that the photoelectric conversion material film is made of amorphous silicon.
The thin film photoelectric conversion element described in Items #[2] and #(3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57045878A JPS58162055A (en) | 1982-03-23 | 1982-03-23 | Thin film photoelectric converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57045878A JPS58162055A (en) | 1982-03-23 | 1982-03-23 | Thin film photoelectric converter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58162055A true JPS58162055A (en) | 1983-09-26 |
Family
ID=12731476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57045878A Pending JPS58162055A (en) | 1982-03-23 | 1982-03-23 | Thin film photoelectric converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58162055A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60115259A (en) * | 1983-11-26 | 1985-06-21 | Nippon Telegr & Teleph Corp <Ntt> | Photoelectric conversion device and manufacture thereof |
| JPS60167478A (en) * | 1984-02-10 | 1985-08-30 | Canon Inc | Manufacture of photosensor |
| JPH01179356A (en) * | 1987-12-31 | 1989-07-17 | Nec Corp | Hybrid integrated photoelectric converter array |
-
1982
- 1982-03-23 JP JP57045878A patent/JPS58162055A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60115259A (en) * | 1983-11-26 | 1985-06-21 | Nippon Telegr & Teleph Corp <Ntt> | Photoelectric conversion device and manufacture thereof |
| JPS60167478A (en) * | 1984-02-10 | 1985-08-30 | Canon Inc | Manufacture of photosensor |
| JPH01179356A (en) * | 1987-12-31 | 1989-07-17 | Nec Corp | Hybrid integrated photoelectric converter array |
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