JPS54102881A - Overload protection unit for semiconductor - Google Patents

Overload protection unit for semiconductor

Info

Publication number
JPS54102881A
JPS54102881A JP913178A JP913178A JPS54102881A JP S54102881 A JPS54102881 A JP S54102881A JP 913178 A JP913178 A JP 913178A JP 913178 A JP913178 A JP 913178A JP S54102881 A JPS54102881 A JP S54102881A
Authority
JP
Japan
Prior art keywords
voltage
layer
semiconductor
junction depth
npn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP913178A
Other languages
Japanese (ja)
Other versions
JPS6056315B2 (en
Inventor
Sadao Okano
Takuzo Ogawa
Komei Yatsuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP913178A priority Critical patent/JPS6056315B2/en
Priority to US06/007,819 priority patent/US4262295A/en
Publication of JPS54102881A publication Critical patent/JPS54102881A/en
Publication of JPS6056315B2 publication Critical patent/JPS6056315B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To protect overload with greater with greater dielectric strength and high reliability, by forming continuously NPN or PNP junction different in avalanche voltage in one semiconductor.
CONSTITUTION: The pellet 9 has the base 1, emitter 2, collector 3, and electrodes 4 and 5, and the center part is the low avalanche voltage element region of NPN trilayer constitution having the junction depth of Xb, thickness of layer 1 as Wb, and junction depth Wb. The circumference part is the high avalanche voltage element region of NPN trilayer constitution having the junction depth Xa, thickness of layer 1 as Wa and the junction depth of Ya. When the transistor junction exceeds the voltage Vd causing avalanche, for the part B with the voltage increased, the carrier in the layer 1B is increased and it is fed to the layer 1A (iD). The iD promotes the switching of transistor of the part A. Thus, the operation of power supply interruption can be made quickly, and the power consumption in the semiconductor is remarkably small. Accordingly, the rated value of the protected device can be made lower near the operation voltage of the protective unit.
COPYRIGHT: (C)1979,JPO&Japio
JP913178A 1978-01-30 1978-01-30 Semiconductor overload protection device Expired JPS6056315B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP913178A JPS6056315B2 (en) 1978-01-30 1978-01-30 Semiconductor overload protection device
US06/007,819 US4262295A (en) 1978-01-30 1979-01-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP913178A JPS6056315B2 (en) 1978-01-30 1978-01-30 Semiconductor overload protection device

Publications (2)

Publication Number Publication Date
JPS54102881A true JPS54102881A (en) 1979-08-13
JPS6056315B2 JPS6056315B2 (en) 1985-12-09

Family

ID=11712066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP913178A Expired JPS6056315B2 (en) 1978-01-30 1978-01-30 Semiconductor overload protection device

Country Status (1)

Country Link
JP (1) JPS6056315B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07313423A (en) * 1994-05-24 1995-12-05 Yoshiyuki Fujita Dustpan and filth containing bag used therefor

Also Published As

Publication number Publication date
JPS6056315B2 (en) 1985-12-09

Similar Documents

Publication Publication Date Title
JPS5422179A (en) Semiconductor switching element
JPS52131449A (en) Semiconductor switch circuit
JPS5380542A (en) Protective device of gate turn off thyristor
JPS5361982A (en) Semiconductor integrated circuit device
JPS551111A (en) Semiconductor device
JPS54102881A (en) Overload protection unit for semiconductor
JPS54140875A (en) Semiconductor device
JPS5593262A (en) Semiconductor device
JPS5232660A (en) Semiconductor switch circuit
JPS5346285A (en) Mesa type high breakdown voltage semiconductor device
JPS5487488A (en) Field effect semiconductor device
JPS53108778A (en) Transistor
JPS54154281A (en) Bipolar semiconductor device and its manufacture
JPS5439562A (en) Semiconductor switch
JPS538570A (en) Semiconductor device
JPS5211872A (en) Semiconductor device
JPS5248986A (en) Semiconductor temperature sensitive switch element
JPS55113371A (en) Power transistor
JPS5382276A (en) Production of semiconductor device
JPS5617067A (en) Semiconductor switch
JPS54159883A (en) Semiconductor device
JPS53107279A (en) Semiconductor device
JPS54118548A (en) Transistor circuit with protection circuit
JPS5282189A (en) Semiconductor device
JPS52125265A (en) Semiconductor control unit