JPS55105343A - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor deviceInfo
- Publication number
- JPS55105343A JPS55105343A JP1260979A JP1260979A JPS55105343A JP S55105343 A JPS55105343 A JP S55105343A JP 1260979 A JP1260979 A JP 1260979A JP 1260979 A JP1260979 A JP 1260979A JP S55105343 A JPS55105343 A JP S55105343A
- Authority
- JP
- Japan
- Prior art keywords
- region
- diffused
- regions
- layer
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To simplify manufacturing process; in forming a plurality of semiconductor elements on the same substrate, and in providing the grooves for separation and for taking out electrodes; by forming them by using anisotropic etching in the same process.
CONSTITUTION: A plurality of N+-embeded regions 13 are diffused and formed on a P-type semiconductor substrate 10, and an N---layer 16 is epitaxially grown on all over the surface. Then, a V-shaped concave groove 11 for separating a layer 16 including the regions 13 and an electrode-taking-out groove 12 which pierces throug the region 13 in the island region are formed so as to reach the substrate 10 by anisotropic etching. At this time, the formations mentioned above are performed by one process. Thereafter, a P-type base region 15 is diffused and formed in the island region by an ordinary method, an N-type emitter region 14 is provided in said region 15, an N-type isolated layer 23 is diffused and formed on the side walls and the bottom of the groove 12, and all the surface is protected by an oxide film 17. Windows are opened through said film, and electrodes are attached to the respective regions.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1260979A JPS55105343A (en) | 1979-02-06 | 1979-02-06 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1260979A JPS55105343A (en) | 1979-02-06 | 1979-02-06 | Manufacturing method of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55105343A true JPS55105343A (en) | 1980-08-12 |
Family
ID=11810096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1260979A Pending JPS55105343A (en) | 1979-02-06 | 1979-02-06 | Manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55105343A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06310591A (en) * | 1993-04-23 | 1994-11-04 | Matsushita Electric Works Ltd | Semiconductor device and manufacture thereof |
-
1979
- 1979-02-06 JP JP1260979A patent/JPS55105343A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06310591A (en) * | 1993-04-23 | 1994-11-04 | Matsushita Electric Works Ltd | Semiconductor device and manufacture thereof |
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