JPS5580344A - Manufacture of semiconductor integrated circuit - Google Patents
Manufacture of semiconductor integrated circuitInfo
- Publication number
- JPS5580344A JPS5580344A JP15305178A JP15305178A JPS5580344A JP S5580344 A JPS5580344 A JP S5580344A JP 15305178 A JP15305178 A JP 15305178A JP 15305178 A JP15305178 A JP 15305178A JP S5580344 A JPS5580344 A JP S5580344A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- grown
- layer
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain a high dielectric strength by the structure such that a dielectric film is provided on the I<2>L forming region of a semiconductor substrate, an epitaxial layer is grown on the entire surface, a dielectric film is provided on a linear transistor forming region, an epitaxial layer is grown again, and different functional elements are produced by different levels of layers. CONSTITUTION:Two n<+>-type buried-in regions 4 are formed by diffusion on p- type Si substrate 1, and epitaxial n-type layer 2a is grown on the entire surface. On one region 4, SiO2 film 14 is provided on the surface of the I<2>L forming region only. Next, epitaxial n-type layer 2b is grown on the entire surface again. On the other region 4, the linear transistor forming region is covered with SiO2 film 15, n-type impurity ions are injected into exposed layer 2b, and n-type layer 16 is formed. Subsequently, film 15 is removed, and the surface where there are level differences is coated with SiO2 film 18 again, and openings are made at specified places. In this way, an IC is formed in which I<2>L and a linear transistor, with p<+>-type separation region 3, n-type collector region 13 of linear transistor, and deep I<2>L region 13.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15305178A JPS5580344A (en) | 1978-12-13 | 1978-12-13 | Manufacture of semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15305178A JPS5580344A (en) | 1978-12-13 | 1978-12-13 | Manufacture of semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5580344A true JPS5580344A (en) | 1980-06-17 |
Family
ID=15553899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15305178A Pending JPS5580344A (en) | 1978-12-13 | 1978-12-13 | Manufacture of semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5580344A (en) |
-
1978
- 1978-12-13 JP JP15305178A patent/JPS5580344A/en active Pending
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