JPS5790962A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5790962A
JPS5790962A JP16579080A JP16579080A JPS5790962A JP S5790962 A JPS5790962 A JP S5790962A JP 16579080 A JP16579080 A JP 16579080A JP 16579080 A JP16579080 A JP 16579080A JP S5790962 A JPS5790962 A JP S5790962A
Authority
JP
Japan
Prior art keywords
film
pad
nitride film
grid line
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16579080A
Other languages
Japanese (ja)
Other versions
JPS623981B2 (en
Inventor
Shiro Hagiwara
Shoji Madokoro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP16579080A priority Critical patent/JPS5790962A/en
Publication of JPS5790962A publication Critical patent/JPS5790962A/en
Publication of JPS623981B2 publication Critical patent/JPS623981B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To improve the wetproof property of passivation structure by coating a conductive layer on a foundation insulating film with a nitride film opened to a pad region including a side surface section of the foundation film and forming the second conductive layer, from which a pad electrode is separated, to the surface of the nitride film. CONSTITUTION:A plurality of Al wiring 14 are shaped onto a field film 13 of a substrate 11 to which a diffusion region is formed. The plasma nitride film 15 is shaped so as to cover the side surfaces of the film 13 and reach on a grid line 17, and the nitride films 15 on the Al layers 14 of the pad regions 16 are removed through etching. The whole surface is coated with the second Al layer 18, and the Al layer 18 is photo-etched so that the pad electrodes 19 are separated from circumferential sections and the Al layers on the grid line 17 are removed. Accordingly, since the infiltration of water from pad sections and the circumference of the grid line can be prevented and the inside can be protected even when there are pin holes in the nitride film 15, passivation structure, wetproof property thereof is improved and reliability thereof is ameliorated, can be formed.
JP16579080A 1980-11-27 1980-11-27 Semiconductor device Granted JPS5790962A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16579080A JPS5790962A (en) 1980-11-27 1980-11-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16579080A JPS5790962A (en) 1980-11-27 1980-11-27 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5790962A true JPS5790962A (en) 1982-06-05
JPS623981B2 JPS623981B2 (en) 1987-01-28

Family

ID=15819037

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16579080A Granted JPS5790962A (en) 1980-11-27 1980-11-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5790962A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63128733A (en) * 1986-11-19 1988-06-01 Sony Corp Semiconductor device
KR20010057340A (en) * 1999-12-22 2001-07-04 박종섭 Structure of pad

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63128733A (en) * 1986-11-19 1988-06-01 Sony Corp Semiconductor device
KR20010057340A (en) * 1999-12-22 2001-07-04 박종섭 Structure of pad

Also Published As

Publication number Publication date
JPS623981B2 (en) 1987-01-28

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