JPS6425458A - Manufacture of dynamic ram - Google Patents

Manufacture of dynamic ram

Info

Publication number
JPS6425458A
JPS6425458A JP62181475A JP18147587A JPS6425458A JP S6425458 A JPS6425458 A JP S6425458A JP 62181475 A JP62181475 A JP 62181475A JP 18147587 A JP18147587 A JP 18147587A JP S6425458 A JPS6425458 A JP S6425458A
Authority
JP
Japan
Prior art keywords
film
insulating film
substrate
polycrystalline
covered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62181475A
Other languages
Japanese (ja)
Inventor
Takashi Osone
Masanori Fukumoto
Mitsuo Yasuhira
Toshiki Yabu
Yoshiyuki Iwata
Yohei Ichikawa
Kazuhiro Matsuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62181475A priority Critical patent/JPS6425458A/en
Publication of JPS6425458A publication Critical patent/JPS6425458A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/373—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate the capacitor extending under or around the transistor

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To obtain a structure which is strong against software errors by storing a signal charge in a polycrystalline semiconductor film isolated from a substrate by a capacity insulating film. CONSTITUTION:A capacity insulating film 32 is formed on the surface of a groove 31 formed on a P<+> type Si substrate 30, and a polycrystalline Si film 33 is buried. It is covered with an insulating film 34 except part of the groove 31 and part of the substrate 30. A polycrystalline Si film is formed on the whole surface, and a thin semicrystal Si film 35 is grown. Parts of the films 35, 33 and the substrate 30 are covered with insulating films 36. A channel region 22, a drain 3, a source 34 are formed in the film 35, and a gate insulating film 37 and a gate electrode 38 becoming a word line are formed. The electrode 38 is covered with an insulating film 39. The silicide connection 41 of the drain adjacent to a switching MOSFET and a source silicide wirings 42 are formed. Since this memory cell has a structure that the signal charge is stored in the polycrystalline Si film isolated form the Si substrate by the capacity insulating film, it is strong against software errors.
JP62181475A 1987-07-21 1987-07-21 Manufacture of dynamic ram Pending JPS6425458A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62181475A JPS6425458A (en) 1987-07-21 1987-07-21 Manufacture of dynamic ram

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62181475A JPS6425458A (en) 1987-07-21 1987-07-21 Manufacture of dynamic ram

Publications (1)

Publication Number Publication Date
JPS6425458A true JPS6425458A (en) 1989-01-27

Family

ID=16101405

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62181475A Pending JPS6425458A (en) 1987-07-21 1987-07-21 Manufacture of dynamic ram

Country Status (1)

Country Link
JP (1) JPS6425458A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03104163A (en) * 1989-09-18 1991-05-01 Mitsubishi Electric Corp Semiconductor storage device and manufacture thereof
EP0599506A1 (en) * 1992-11-27 1994-06-01 International Business Machines Corporation Semiconductor memory cell with SOI MOSFET
KR100273678B1 (en) * 1997-06-30 2000-12-15 김영환 Memory device and method for fabricating the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03104163A (en) * 1989-09-18 1991-05-01 Mitsubishi Electric Corp Semiconductor storage device and manufacture thereof
EP0599506A1 (en) * 1992-11-27 1994-06-01 International Business Machines Corporation Semiconductor memory cell with SOI MOSFET
KR100273678B1 (en) * 1997-06-30 2000-12-15 김영환 Memory device and method for fabricating the same

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