JPS51139785A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS51139785A
JPS51139785A JP50063502A JP6350275A JPS51139785A JP S51139785 A JPS51139785 A JP S51139785A JP 50063502 A JP50063502 A JP 50063502A JP 6350275 A JP6350275 A JP 6350275A JP S51139785 A JPS51139785 A JP S51139785A
Authority
JP
Japan
Prior art keywords
semiconductor device
configulation
darlington
switching time
device formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50063502A
Other languages
Japanese (ja)
Inventor
Shuzo Saeki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP50063502A priority Critical patent/JPS51139785A/en
Publication of JPS51139785A publication Critical patent/JPS51139785A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:A semiconductor device formed in Darlington configulation and with high collector dielectric strength, excellent current amplification degree and fast switching time.
JP50063502A 1975-05-29 1975-05-29 Semiconductor device Pending JPS51139785A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50063502A JPS51139785A (en) 1975-05-29 1975-05-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50063502A JPS51139785A (en) 1975-05-29 1975-05-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS51139785A true JPS51139785A (en) 1976-12-02

Family

ID=13231060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50063502A Pending JPS51139785A (en) 1975-05-29 1975-05-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS51139785A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61149355U (en) * 1985-03-06 1986-09-16

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61149355U (en) * 1985-03-06 1986-09-16

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