JPS57135495A - Mnos storage element - Google Patents

Mnos storage element

Info

Publication number
JPS57135495A
JPS57135495A JP1989081A JP1989081A JPS57135495A JP S57135495 A JPS57135495 A JP S57135495A JP 1989081 A JP1989081 A JP 1989081A JP 1989081 A JP1989081 A JP 1989081A JP S57135495 A JPS57135495 A JP S57135495A
Authority
JP
Japan
Prior art keywords
mnos
storage element
substrate
storage
holding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1989081A
Other languages
Japanese (ja)
Inventor
Kazunari Hayafuchi
Motoyuki Uchino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Holdings Co Ltd
Citizen Watch Co Ltd
Original Assignee
Citizen Holdings Co Ltd
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Holdings Co Ltd, Citizen Watch Co Ltd filed Critical Citizen Holdings Co Ltd
Priority to JP1989081A priority Critical patent/JPS57135495A/en
Publication of JPS57135495A publication Critical patent/JPS57135495A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To extend the storage holding time of an MNOS storage element by biasing the gate terminals of the MNOS transistor to higher potentials than that of a substrate without turning on the MNOS transistor during data holding other than writing and reading. CONSTITUTION:While electrons are trapped in the trap center of a P channel MNOS storage element, gate terminals 5 and 5' are biased to a higher potential than that of a silicon substrate so that those terminals turn off during data holding. In said state, the threshold voltage is in a depletion area. When a gate voltage to the substrate is varied by three stages (VGB=+1.5V, 0V and -1.5V as shown in Fig. (a)), it is evident that when VGB=1.5V, a secular change in ''0'' Level threshold value is extremely small and the capability of storage and holding is superior.
JP1989081A 1981-02-13 1981-02-13 Mnos storage element Pending JPS57135495A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1989081A JPS57135495A (en) 1981-02-13 1981-02-13 Mnos storage element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1989081A JPS57135495A (en) 1981-02-13 1981-02-13 Mnos storage element

Publications (1)

Publication Number Publication Date
JPS57135495A true JPS57135495A (en) 1982-08-21

Family

ID=12011784

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1989081A Pending JPS57135495A (en) 1981-02-13 1981-02-13 Mnos storage element

Country Status (1)

Country Link
JP (1) JPS57135495A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS502480A (en) * 1973-05-08 1975-01-11
JPS5066125A (en) * 1973-10-11 1975-06-04
JPS5279840A (en) * 1975-12-26 1977-07-05 Nec Corp Operation of nonvolatile semiconductor memory element
JPS5330310A (en) * 1976-09-01 1978-03-22 Fujitsu Ltd Magnetic head assembly of floating type

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS502480A (en) * 1973-05-08 1975-01-11
JPS5066125A (en) * 1973-10-11 1975-06-04
JPS5279840A (en) * 1975-12-26 1977-07-05 Nec Corp Operation of nonvolatile semiconductor memory element
JPS5330310A (en) * 1976-09-01 1978-03-22 Fujitsu Ltd Magnetic head assembly of floating type

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