JPS644077A - Memory cell - Google Patents
Memory cellInfo
- Publication number
- JPS644077A JPS644077A JP62159384A JP15938487A JPS644077A JP S644077 A JPS644077 A JP S644077A JP 62159384 A JP62159384 A JP 62159384A JP 15938487 A JP15938487 A JP 15938487A JP S644077 A JPS644077 A JP S644077A
- Authority
- JP
- Japan
- Prior art keywords
- readout operation
- writing
- oxide film
- control gate
- tunnel oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To prevent soft write in a readout operation, by forming an n-type of a semiconductor substrate and forming a p<+> layer of a source/drain region and composing this memory cell to make holes pass through a tunnel oxide film on writing and erasing operations. CONSTITUTION:The same negative voltages are applied to a control gate 5 and a p<+> layer drain 2, and an n-type substrate 1 is earthed. These voltages applied to the control gate 5 and the p<+> layer drain 2 are higher than those on writing and erasing operations. Holes, which are so larger in their potentials than electrons on the readout operation as to be impassable through a tunnel oxide film, are used to perform the writing and erasing operations. Accordingly, there are reduced holes passing through the tunnel oxide film due to a tunnel effect by the voltage applied to the control gate on the readout operation, so that soft write in the readout operation can be prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62159384A JPS644077A (en) | 1987-06-25 | 1987-06-25 | Memory cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62159384A JPS644077A (en) | 1987-06-25 | 1987-06-25 | Memory cell |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS644077A true JPS644077A (en) | 1989-01-09 |
Family
ID=15692620
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62159384A Pending JPS644077A (en) | 1987-06-25 | 1987-06-25 | Memory cell |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS644077A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7099195B2 (en) * | 2002-05-29 | 2006-08-29 | Micron Technology, Inc. | Methods for neutralizing holes in tunnel oxides of floating-gate memory cells and devices |
-
1987
- 1987-06-25 JP JP62159384A patent/JPS644077A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7099195B2 (en) * | 2002-05-29 | 2006-08-29 | Micron Technology, Inc. | Methods for neutralizing holes in tunnel oxides of floating-gate memory cells and devices |
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