JPS644077A - Memory cell - Google Patents

Memory cell

Info

Publication number
JPS644077A
JPS644077A JP62159384A JP15938487A JPS644077A JP S644077 A JPS644077 A JP S644077A JP 62159384 A JP62159384 A JP 62159384A JP 15938487 A JP15938487 A JP 15938487A JP S644077 A JPS644077 A JP S644077A
Authority
JP
Japan
Prior art keywords
readout operation
writing
oxide film
control gate
tunnel oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62159384A
Other languages
Japanese (ja)
Inventor
Naoki Iwazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62159384A priority Critical patent/JPS644077A/en
Publication of JPS644077A publication Critical patent/JPS644077A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent soft write in a readout operation, by forming an n-type of a semiconductor substrate and forming a p<+> layer of a source/drain region and composing this memory cell to make holes pass through a tunnel oxide film on writing and erasing operations. CONSTITUTION:The same negative voltages are applied to a control gate 5 and a p<+> layer drain 2, and an n-type substrate 1 is earthed. These voltages applied to the control gate 5 and the p<+> layer drain 2 are higher than those on writing and erasing operations. Holes, which are so larger in their potentials than electrons on the readout operation as to be impassable through a tunnel oxide film, are used to perform the writing and erasing operations. Accordingly, there are reduced holes passing through the tunnel oxide film due to a tunnel effect by the voltage applied to the control gate on the readout operation, so that soft write in the readout operation can be prevented.
JP62159384A 1987-06-25 1987-06-25 Memory cell Pending JPS644077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62159384A JPS644077A (en) 1987-06-25 1987-06-25 Memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62159384A JPS644077A (en) 1987-06-25 1987-06-25 Memory cell

Publications (1)

Publication Number Publication Date
JPS644077A true JPS644077A (en) 1989-01-09

Family

ID=15692620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62159384A Pending JPS644077A (en) 1987-06-25 1987-06-25 Memory cell

Country Status (1)

Country Link
JP (1) JPS644077A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7099195B2 (en) * 2002-05-29 2006-08-29 Micron Technology, Inc. Methods for neutralizing holes in tunnel oxides of floating-gate memory cells and devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7099195B2 (en) * 2002-05-29 2006-08-29 Micron Technology, Inc. Methods for neutralizing holes in tunnel oxides of floating-gate memory cells and devices

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